DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC549; BC550
NPN general purpose transistors
Product specification |
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1999 Apr 22 |
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Supersedes data of 1997 Jun 20 |
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Philips Semiconductors |
Product specification |
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NPN general purpose transistors |
BC549; BC550 |
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FEATURES
∙Low current (max. 100 mA)
∙Low voltage (max. 45 V).
APPLICATIONS
∙ Low noise stages in audio frequency equipment.
DESCRIPTION
NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC559 and BC560.
LIMITING VALUES
PINNING
PIN |
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DESCRIPTION |
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1 |
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emitter |
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2 |
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base |
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3 |
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collector |
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handbook, halfpage1 |
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MAM182 |
1 |
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Fig.1 |
Simplified outline (TO-92; SOT54) |
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and symbol. |
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In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VCBO |
collector-base voltage |
open emitter |
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BC549 |
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− |
30 |
V |
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BC550 |
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− |
50 |
V |
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VCEO |
collector-emitter voltage |
open base |
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BC549 |
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− |
30 |
V |
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BC550 |
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− |
45 |
V |
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VEBO |
emitter-base voltage |
open collector |
− |
5 |
V |
IC |
collector current (DC) |
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− |
100 |
mA |
ICM |
peak collector current |
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− |
200 |
mA |
IBM |
peak base current |
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− |
200 |
mA |
Ptot |
total power dissipation |
Tamb ≤ 25 °C; note 1 |
− |
500 |
mW |
Tstg |
storage temperature |
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−65 |
+150 |
°C |
Tj |
junction temperature |
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− |
150 |
°C |
Tamb |
operating ambient temperature |
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−65 |
+150 |
°C |
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 22 |
2 |
Philips Semiconductors |
|
Product specification |
||
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|
|
NPN general purpose transistors |
|
BC549; BC550 |
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|
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THERMAL CHARACTERISTICS |
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SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT |
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Rth j-a |
thermal resistance from junction to ambient |
note 1 |
250 |
K/W |
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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ICBO |
collector cut-off current |
IE = 0; VCB = 30 V |
− |
− |
15 |
nA |
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IE = 0; VCB = 30 V; Tj = 150 °C |
− |
− |
5 |
μA |
IEBO |
emitter cut-off current |
IC = 0; VEB = 5 V |
− |
− |
100 |
nA |
hFE |
DC current gain |
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BC549C; BC550C |
IC = 10 μA; VCE = 5 V; see Fig.2 |
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270 |
− |
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IC = 2 mA; VCE = 5 V; see Fig.2 |
420 |
520 |
800 |
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VCEsat |
collector-emitter saturation voltage |
IC = 10 mA; IB = 0.5 mA |
− |
90 |
250 |
mV |
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IC = 100 mA; IB = 5 mA |
− |
200 |
600 |
mV |
VBEsat |
base-emitter saturation voltage |
IC = 10 mA; IB = 0.5 mA; note 1 |
− |
700 |
− |
mV |
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IC = 100 mA; IB = 5 mA; note 1 |
− |
900 |
− |
mV |
VBE |
base-emitter voltage |
IC = 2 mA; VCE = 5 V; note 2 |
580 |
660 |
700 |
mV |
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IC = 10 mA; VCE = 5 V; note 2 |
− |
− |
770 |
mV |
Cc |
collector capacitance |
IE = ie = 0; VCB = 10 V; f = 1 MHz |
− |
1.5 |
− |
pF |
Ce |
emitter capacitance |
IC = ic = 0; VEB = 0.5 V; f = 1 MHz |
− |
11 |
− |
pF |
fT |
transition frequency |
IC = 10 mA; VCE = 5 V; |
100 |
− |
− |
MHz |
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f = 100 MHz |
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F |
noise figure |
IC = 200 μA; VCE = 5 V; |
− |
− |
4 |
dB |
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RS = 2 kΩ; f = 10 Hz to 15.7 kHz |
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IC = 200 μA; VCE = 5 V; |
− |
− |
4 |
dB |
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RS = 2 kΩ; f = 1 kHz; B = 200 Hz |
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Notes
1.VBEsat decreases by about 1.7 mV/K with increasing temperature.
2.VBE decreases by about 2 mV/K with increasing temperature.
1999 Apr 22 |
3 |