Philips BC557C, BC557, BC556B, BC557B, BC557A Datasheet

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D186

BC556; BC557

PNP general purpose transistors

Product specification			1999 Apr 15
Supersedes data of 1997 Mar 27

Philips Semiconductors	Product specification
PNP general purpose transistors	BC556; BC557

FEATURES

∙Low current (max. 100 mA)

∙Low voltage (max. 65 V).

APPLICATIONS

∙ General purpose switching and amplification.

DESCRIPTION

PNP transistor in a TO-92; SOT54 plastic package. NPN complements: BC546 and BC547.

LIMITING VALUES

PINNING

PIN						DESCRIPTION
1		emitter
2		base
3		collector
handbook, halfpage1												3
	2
	3										2
											MAM281	1
Fig.1	Simplified outline (TO-92; SOT54)
	and symbol.

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VCBO	collector-base voltage	open emitter
	BC556		−	−80	V
	BC557		−	−50	V
VCEO	collector-emitter voltage	open base
	BC556		−	−65	V
	BC557		−	−45	V
VEBO	emitter-base voltage	open collector	−	−5	V
IC	collector current (DC)		−	−100	mA
ICM	peak collector current		−	−200	mA
IBM	peak base current		−	−200	mA
Ptot	total power dissipation	Tamb ≤ 25 °C	−	500	mW
Tstg	storage temperature		−65	+150	°C
Tj	junction temperature		−	150	°C
Tamb	operating ambient temperature		−65	+150	°C

1999 Apr 15

2

Philips Semiconductors				Product specification
PNP general purpose transistors			BC556; BC557
THERMAL CHARACTERISTICS
SYMBOL	PARAMETER	CONDITIONS	VALUE		UNIT
Rth j-a	thermal resistance from junction to ambient	note 1	250		K/W

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
ICBO	collector cut-off current	IE = 0; VCB = −30 V	−	−1	−15	nA
		IE = 0; VCB = −30 V; Tj = 150 °C	−	−	−4	μA
IEBO	emitter cut-off current	IC = 0; VEB = −5 V	−	−	−100	nA
hFE	DC current gain	IC = −2 mA; VCE = −5 V;
	BC556	see Figs 2, 3 and 4	125	−	475
	BC557		125	−	800
	BC556A		125	−	250
	BC556B; BC557B		220	−	475
	BC557C		420	−	800
VCEsat	collector-emitter saturation	IC = −10 mA; IB = −0.5 mA	−	−60	−300	mV
	voltage	IC = −100 mA; IB = −5 mA	−	−180	−650	mV
VBEsat	base-emitter saturation voltage	IC = −10 mA; IB = −0.5 mA; note 1	−	−750	−	mV
		IC = −100 mA; IB = −5 mA; note 1	−	−930	−	mV
VBE	base-emitter voltage	IC = −2 mA; VCE = −5 V; note 2	−600	−650	−750	mV
		IC = −10 mA; VCE = −5 V; note 2	−	−	−820	mV
Cc	collector capacitance	IE = ie = 0; VCB = −10 V; f = 1 MHz	−	3	−	pF
Ce	emitter capacitance	IC = ic = 0; VEB = −0.5 V; f = 1 MHz	−	10	−	pF
fT	transition frequency	IC = −10 mA; VCE = −5 V; f = 100 MHz	100	−	−	MHz
F	noise figure	IC = −200 μA; VCE = −5 V; RS = 2 kΩ;	−	2	10	dB
		f = 1 kHz; B = 200 Hz

Notes

1.VBEsat decreases by about −1.7 mV/K with increasing temperature.

2.VBE decreases by about −2 mV/K with increasing temperature.

1999 Apr 15

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