DISCRETE SEMICONDUCTORS
BF246A; BF246B; BF246C; BF247A; BF247B; BF247C
N-channel silicon junction field-effect transistors
Product specification |
1996 Jul 29 |
Supersedes data of April 1995
File under Discrete Semiconductors, SC07
Philips Semiconductors |
Product specification |
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N-channel silicon junction |
BF246A; BF246B; BF246C; |
field-effect transistors |
BF247A; BF247B; BF247C |
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FEATURES
·Interchangeability of drain and source connections
·High IDSS range
·Frequency up to 450 MHz.
APPLICATIONS
·VHF and UHF amplifiers
·Mixers
·General purpose switching.
DESCRIPTION
General purpose N-channel symmetrical silicon junction field-effect transistors in a plastic TO-92 variant package.
CAUTION
The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling.
PINNING
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DESCRIPTION |
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BF246A; BF246B; BF246C |
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1 |
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d |
drain |
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2 |
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g |
gate |
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s |
source |
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BF247A; BF247B; BF247C |
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1 |
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d |
drain |
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s |
source |
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3 |
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g |
gate |
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1 |
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handbook, halfpage2 |
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3 |
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MAM257 |
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Fig.1 |
Simplified outline (TO-92 variant) |
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and symbol. |
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QUICK REFERENCE DATA
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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VDS |
drain-source voltage |
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±25 |
V |
VGSoff |
gate-source cut-off voltage |
ID = 10 nA; VDS = 15 V |
-0.6 |
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-14.5 |
V |
IDSS |
drain current |
VDS = 15 V; VGS = 0 |
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BF246A; BF247A |
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30 |
- |
80 |
mA |
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BF246B; BF247B |
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60 |
- |
140 |
mA |
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BF246C; BF247C |
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110 |
- |
250 |
mA |
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Ptot |
total power dissipation |
up to Tamb = 50 °C |
- |
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400 |
mW |
ïyfsï |
forward transfer admittance |
ID = 10 mA; VDS = 15 V; |
8 |
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mS |
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f = 1 kHz |
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Crs |
reverse transfer capacitance |
ID = 10 mA; VDS = 15 V; |
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3.5 |
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pF |
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f = 1 MHz |
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Tj |
operating junction temperature |
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150 |
°C |
1996 Jul 29 |
2 |
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