DISCRETE SEMICONDUCTORS
DATA SHEET
age
M3D088
BAT754 series
Schottky barrier (double) diodes
Product specification |
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1999 Aug 05 |
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Philips Semiconductors |
Product specification |
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Schottky barrier (double) diodes |
BAT754 series |
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FEATURES
∙Very low forward voltage
∙Guard ring protected
∙Small plastic SMD package
∙Low diode capacitance.
APPLICATIONS
∙Ultra high-speed switching
∙Voltage clamping
∙Protection circuits
∙Blocking diodes
∙Low power consumption applications, e.g. hand-held applications.
DESCRIPTION
Planar Schottky barrier diodes encapsulated in a SOT23 small plastic SMD package. Low forward voltage selection of the BAT54 series. Single diodes and double diodes with different pinning are available.
MARKING
TYPE |
MARKING |
NUMBER |
CODE |
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BAT754 |
2K |
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BAT754A |
2L |
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BAT754C |
2M |
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BAT754S |
2N |
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PINNING
PIN |
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BAT754 |
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A |
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C |
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S |
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1 |
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a |
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k1 |
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a1 |
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a1 |
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2 |
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n.c. |
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k2 |
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a2 |
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k2 |
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3 |
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k |
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a1, a2 |
k1, k2 |
k1, a2 |
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3 |
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Top view |
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MGC421 |
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Fig.1 |
Simplified outline |
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(SOT23) and pin |
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configuration. |
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3 |
1 |
2 |
n.c.
MLC357
Fig.2 BAT754 single diode configuration (symbol).
3
1 
2
MLC360
Fig.3 BAT754A diode configuration (symbol).
3
1 
2
MLC359
Fig.4 BAT754C diode configuration (symbol).
3
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2
MLC358
Fig.5 BAT754S diode configuration (symbol).
1999 Aug 05 |
2 |
Philips Semiconductors |
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Product specification |
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Schottky barrier (double) diodes |
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BAT754 series |
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LIMITING VALUES |
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In accordance with the Absolute Maximum Rating System (IEC 134). |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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Per diode |
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VR |
continuous reverse voltage |
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30 |
V |
IF |
continuous forward current |
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− |
200 |
mA |
IFRM |
repetitive peak forward current |
tp ≤ 1 s; δ ≤ 0.5 |
− |
300 |
mA |
IFSM |
non-repetitive peak forward current |
t = 8.3 ms half sinewave; |
− |
600 |
mA |
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JEDEC method |
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Tstg |
storage temperature |
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−65 |
+150 |
°C |
Tj |
junction temperature |
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125 |
°C |
Tamb |
operating ambient temperature |
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−65 |
+125 |
°C |
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL |
PARAMETER |
CONDITIONS |
TYP. |
MAX. |
UNIT |
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Per diode |
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VF |
forward voltage |
see Fig.6 |
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IF = 0.1 mA |
− |
200 |
mV |
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IF = 1 mA |
− |
260 |
mV |
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IF = 10 mA |
− |
340 |
mV |
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IF = 30 mA |
− |
420 |
mV |
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IF = 100 mA |
600 |
− |
mV |
IR |
reverse current |
VR = 25 V; note 1; see Fig.7 |
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2 |
μA |
Cd |
diode capacitance |
f = 1 MHz; VR = 1 V; see Fig.8 |
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10 |
pF |
Note
1. Pulse test: tp = 300 μs; δ ≤ 0.02.
THERMAL CHARACTERISTICS
SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT |
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Rth j-a |
thermal resistance from junction to |
note 1 |
500 |
K/W |
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ambient |
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Note |
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1. Refer to SOT23 standard mounting conditions.
1999 Aug 05 |
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