DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BC859; BC860
PNP general purpose transistors
Product specification |
|
1999 May 28 |
|||||
Supersedes data of 1998 Jul 16 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Philips Semiconductors |
Product specification |
|
|
PNP general purpose transistors |
BC859; BC860 |
|
|
|
|
FEATURES
∙Low current (max. 100 mA)
∙Low voltage (max. 45 V).
APPLICATIONS
∙ Low noise input stages of audio frequency equipment.
DESCRIPTION
PNP transistor in a SOT23 plastic package. NPN complements: BC849 and BC850.
MARKING
TYPE |
MARKING |
TYPE |
MARKING |
NUMBER |
CODE(1) |
NUMBER |
CODE(1) |
BC859B |
4B |
BC860B |
4F |
|
|
|
|
BC859C |
4C |
BC860C |
4G |
|
|
|
|
Note
1.= p : Made in Hong Kong.= t : Made in Malaysia.
PINNING
PIN |
DESCRIPTION |
|
|
1 |
base |
|
|
2 |
emitter |
|
|
3 |
collector |
|
|
handbook, halfpage |
|
3 |
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
3 |
|||||
|
|
|
1 |
|
|
|
|||
|
|
|
|
|
|
||||
|
|
|
|
|
|
||||
|
|
|
|
|
|
||||
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
2 |
|||
|
|
|
|
|
|
||||
|
|
1 |
|
|
|
2 |
|
|
|
|
|
|
|
|
|
|
|
|
|
Top view |
|
|
|
MAM256 |
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
|
|
|
|
|
|
VCBO |
collector-base voltage |
open emitter |
|
|
|
|
BC859 |
|
− |
−30 |
V |
|
BC860 |
|
− |
−50 |
V |
|
|
|
|
|
|
VCEO |
collector-emitter voltage |
open base |
|
|
|
|
BC859 |
|
− |
−30 |
V |
|
BC860 |
|
− |
−45 |
V |
|
|
|
|
|
|
VEBO |
emitter-base voltage |
open collector |
− |
−5 |
V |
IC |
collector current (DC) |
|
− |
−100 |
mA |
ICM |
peak collector current |
|
− |
−200 |
mA |
IBM |
peak base current |
|
− |
−200 |
mA |
Ptot |
total power dissipation |
Tamb ≤ 25 °C; note 1 |
− |
250 |
mW |
Tstg |
storage temperature |
|
−65 |
+150 |
°C |
Tj |
junction temperature |
|
− |
150 |
°C |
Tamb |
operating ambient temperature |
|
−65 |
+150 |
°C |
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 May 28 |
2 |
Philips Semiconductors |
|
Product specification |
||
|
|
|
|
|
PNP general purpose transistors |
|
BC859; BC860 |
||
|
|
|
|
|
THERMAL CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT |
|
|
|
|
|
Rth j-a |
thermal resistance from junction to ambient |
note 1 |
500 |
K/W |
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
|
|
|
|
|
|
|
ICBO |
collector cut-off current |
IE = 0; VCB = −30 V |
− |
−1 |
−15 |
nA |
|
|
IE = 0; VCB = −30 V; Tj = 150 °C |
− |
− |
−4 |
μA |
IEBO |
emitter cut-off current |
IC = 0; VEB = −5 V |
− |
− |
−100 |
nA |
hFE |
DC current gain |
IC = −2 mA; VCE = −5 V; |
|
|
|
|
|
BC859B; BC860B |
see Figs 2 and 3 |
220 |
− |
475 |
|
|
BC859C; BC860C |
|
420 |
− |
800 |
|
|
|
|
|
|
|
|
VCEsat |
collector-emitter saturation |
IC = −10 mA; IB = −0.5 mA |
− |
−75 |
−300 |
mV |
|
voltage |
IC = −100 mA; IB = −5 mA |
− |
−250 |
−650 |
mV |
VBEsat |
base-emitter saturation voltage |
IC = −10 mA; IB = −0.5 mA; note 1 |
− |
−700 |
− |
mV |
|
|
IC = −100 mA; IB = −5 mA; note 1 |
− |
−850 |
− |
mV |
VBE |
base-emitter voltage |
IC = −2 mA; VCE = −5 V; note 2 |
−600 |
−650 |
−750 |
mV |
|
|
IC = −10 mA; VCE = −5 V; note 2 |
− |
− |
−820 |
mV |
Cc |
collector capacitance |
IE = ie = 0; VCB = −10 V; f = 1 MHz |
− |
4.5 |
− |
pF |
Ce |
emitter capacitance |
IC = ic = 0; VEB = −500 mV; f = 1 MHz |
− |
10 |
− |
pF |
fT |
transition frequency |
IC = −10 mA; VCE = −5 V; f = 100 MHz |
100 |
− |
− |
MHz |
F |
noise figure |
IC = −200 μA; VCE = −5 V; RS = 2 kΩ; |
|
|
|
|
|
BC859B; BC860B; |
f = 30 Hz to 15 kHz |
− |
− |
4 |
dB |
|
BC859C; BC860C |
|
|
|
|
|
|
|
|
|
|
|
|
|
noise figure |
IC = −200 μA; VCE = −5 V; RS = 2 kΩ; |
|
|
|
|
|
BC859B; BC860B; |
f = 1 kHz; B = 200 Hz |
− |
− |
4 |
dB |
|
BC859C; BC860C |
|
|
|
|
|
|
|
|
|
|
|
|
Notes
1.VBEsat decreases by about −1.7 mV/K with increasing temperature.
2.VBE decreases by about −2 mV/K with increasing temperature.
1999 May 28 |
3 |