DISCRETE SEMICONDUCTORS
DATA SHEET
BFG67; BFG67/X; BFG67/XR
NPN 8 GHz wideband transistors
Product specification |
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1998 Oct 02 |
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Supersedes data of September 1995 |
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Philips Semiconductors |
Product specification |
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NPN 8 GHz wideband transistors |
BFG67; BFG67/X; BFG67/XR |
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FEATURES
∙High power gain
∙Low noise figure
∙High transition frequency
∙Gold metallization ensures excellent reliability.
APPLICATIONS
Wideband applications in the GHz range, such as satellite TV tuners and portable RF communications equipment.
DESCRIPTION
NPN silicon transistor in a 4-pin, dual-emitter SOT143B plastic package. Available with in-line emitter pinning (BFG67) and cross emitter pinning (BFG67/X). Version with reverse pinning (BFG67/XR) also available on request.
MARKING
TYPE NUMBER |
CODE |
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BFG67 (Fig.1) |
V3 |
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BFG67/X (Fig.1) |
V12 |
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BFG67/XR (Fig.2) |
V26 |
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QUICK REFERENCE DATA
PINNING
PIN |
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DESCRIPTION |
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BFG67 |
BFG67/X |
BFG67/XR |
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1 |
collector |
collector |
collector |
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2 |
base |
emitter |
emitter |
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3 |
emitter |
base |
base |
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4 |
emitter |
emitter |
emitter |
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4 |
3 |
3 |
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4 |
1 |
2 |
2 |
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1 |
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Top view |
MSB014 |
Top view |
MSB035 |
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Fig.1 Simplified outline |
Fig.2 Simplified outline |
SOT143B. |
SOT143R. |
SYMBOL |
PARAMETER |
CONDITIONS |
TYP. |
MAX. |
UNIT |
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VCEO |
collector-emitter voltage |
open base |
− |
10 |
V |
IC |
collector current (DC) |
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50 |
mA |
Ptot |
total power dissipation |
Ts ≤ 65 °C |
− |
300 |
mW |
Cre |
feedback capacitance |
IC = ic = 0; VCB = 8 V; f = 1 MHz |
0.5 |
− |
pF |
fT |
transition frequency |
IC = 15 mA; VCE = 8 V; f = 500 MHz |
8 |
− |
GHz |
GUM |
maximum unilateral power |
IC = 15 mA; VCE = 8 V; |
17 |
− |
dB |
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gain |
Tamb = 25 °C; f = 1 GHz |
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F |
noise figure |
Γs = Γopt; IC = 5 mA; VCE = 8 V; |
1.3 |
− |
dB |
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Tamb = 25 °C; f = 1 GHz |
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Γs = Γopt; IC = 5 mA; VCE = 8 V; |
2.2 |
− |
dB |
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Tamb = 25 °C; f = 2 GHz |
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1998 Oct 02 |
2 |
Philips Semiconductors |
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Product specification |
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NPN 8 GHz wideband transistors |
BFG67; BFG67/X; BFG67/XR |
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LIMITING VALUES |
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In accordance with the Absolute Maximum Rating System (IEC 134). |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VCBO |
collector-base voltage |
open emitter |
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− |
20 |
V |
VCEO |
collector-emitter voltage |
open base |
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− |
10 |
V |
VEBO |
emitter-base voltage |
open collector |
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− |
2.5 |
V |
IC |
collector current (DC) |
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− |
50 |
mA |
Ptot |
total power dissipation |
Ts ≤ 65 °C; see Fig.3; note 1 |
− |
380 |
mW |
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Tstg |
storage temperature range |
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−65 |
150 |
°C |
Tj |
junction temperature |
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− |
175 |
°C |
Note
1. Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT |
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Rth j-s |
thermal resistance from junction to soldering point |
note 1 |
290 |
K/W |
Note |
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1. Ts is the temperature at the soldering point of the collector pin.
MBC984 - 1
400 handbook, halfpage
Ptot (mW)
300
200
100
0
0 |
50 |
100 |
150 |
200 |
Ts (o C)
Fig.3 Power derating curve.
1998 Oct 02 |
3 |
Philips Semiconductors |
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Product specification |
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NPN 8 GHz wideband transistors |
BFG67; BFG67/X; BFG67/XR |
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CHARACTERISTICS |
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Tj = 25 °C unless otherwise specified. |
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SYMBOL |
PARAMETER |
CONDITIONS |
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MIN. |
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TYP. |
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MAX. |
UNIT |
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ICBO |
collector leakage current |
VCB = 5 V; IE = 0 |
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− |
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− |
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50 |
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nA |
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hFE |
DC current gain |
IC = 15 mA; VCE = 5 V |
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60 |
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100 |
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− |
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fT |
transition frequency |
IC = 15 mA; VCE = 8 V; f = 500 MHz |
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− |
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8 |
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− |
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GHz |
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Cc |
collector capacitance |
IE = ie = 0; VCB = 8 V; f = 1 MHz |
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0.7 |
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− |
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pF |
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Ce |
emitter capacitance |
IC = ic = 0; VEB = 0.5 V; f = 1 MHz |
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− |
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1.3 |
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− |
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pF |
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Cre |
feedback capacitance |
IC = ic = 0; VCB = 8 V; f = 1 MHz |
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− |
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0.5 |
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− |
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pF |
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GUM |
maximum unilateral power |
IC = 15 mA; VCE = 8 V; |
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− |
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17 |
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− |
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dB |
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gain; note 1 |
Tamb = 25 °C; f = 1 GHz |
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IC = 15 mA; VCE = 8 V; |
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− |
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10 |
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− |
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dB |
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Tamb = 25 °C; f = 2 GHz |
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F |
noise figure |
Γs = Γopt; IC = 5 mA; VCE = 8 V |
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− |
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1.3 |
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− |
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dB |
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Tamb = 25 °C; f = 1 GHz |
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Γs = Γopt; IC = 15 mA; VCE = 8 V; |
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− |
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1.7 |
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− |
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dB |
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Tamb = 25 °C; f = 1 GHz |
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IC = 5 mA; VCE = 8 V; |
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− |
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2.5 |
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− |
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dB |
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Tamb = 25 °C; f = 2 GHz; ZS = 60 Ω |
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IC = 15 mA; VCE = 8 V; |
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− |
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3 |
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− |
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dB |
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Tamb = 25 °C; f = 2 GHz; ZS = 60 Ω |
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Note |
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S21 |
2 |
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1. GUM is the maximum unilateral power gain, assuming S12 is zero and GUM |
= 10 |
log |
-------------------------------------------------------------- dB. |
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( |
1 – |
S |
11 |
2) ( |
1 – |
S |
22 |
2) |
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1998 Oct 02 |
4 |
Philips Semiconductors |
Product specification |
|
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NPN 8 GHz wideband transistors |
BFG67; BFG67/X; BFG67/XR |
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MBB301
120 handbook, halfpage
h FE
80
40
0
0 |
20 |
40 |
60 |
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I C (mA) |
VCE = 5 V.
Fig.4 DC current gain as a function of collector current.
MBB302
0.8
Cre (pF)
0.6
0.4
0.2
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4 |
8 |
12 VCB (V) 16 |
IC = ic = 0; f = 1 MHz.
Fig.5 Feedback capacitance as a function of collector-base voltage.
MBB303
10 handbook, halfpage
f T
(GHz)
8
6
4
2
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0 |
10 |
20 |
30 |
40 |
IC (mA)
VCE = 8 V; Tamb = 25 °; f = 2 GHz.
Fig.6 Transition frequency as a function of collector current.
25 |
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MBB304 |
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handbook, halfpage |
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gain |
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MSG |
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20 |
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G max |
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15 |
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G UM |
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10 |
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5 |
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0 |
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30 |
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10 |
20 |
IC (mA) 40 |
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VCE = 8 V; f = 1 GHz. |
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GUM = maximum unilateral power gain;
MSG = maximum stable gain;
Gmax = maximum available gain.
Fig.7 Gain as a function of collector current.
1998 Oct 02 |
5 |
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