Philips BSP43, BSP41, BAS40-04W, BAS40W, BAS40-05W Datasheet

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D087

BSP41; BSP43

NPN medium power transistors

Product specification			1999 Apr 26
Supersedes data of 1997 Sep 05

Philips Semiconductors	Product specification
NPN medium power transistors	BSP41; BSP43

FEATURES

∙High current (max. 1 A)

∙Low voltage (max. 80 V).

APPLICATIONS

∙Telephony and general industrial applications

∙Thick and thin-film circuits.

DESCRIPTION

NPN medium power transistor in a SOT223 plastic package. PNP complements: BSP31; BSP32 and BSP33.

PINNING

PIN									DESCRIPTION
1				base
2,4				collector
3				emitter
handbook, halfpage							4
							2, 4
							1
									3
			1			2			3
Top view									MAM287

Fig.1 Simplified outline (SOT223) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VCBO	collector-base voltage	open emitter
	BSP41		−	70	V
	BSP43		−	90	V
VCEO	collector-emitter voltage	open base
	BSP41		−	60	V
	BSP43		−	80	V
VEBO	emitter-base voltage	open collector	−	5	V
IC	collector current (DC)		−	1	A
ICM	peak collector current		−	2	A
IBM	peak base current		−	0.2	A
Ptot	total power dissipation	Tamb ≤ 25 °C; note 1	−	1.3	W
Tstg	storage temperature		−65	+150	°C
Tj	junction temperature		−	150	°C
Tamb	operating ambient temperature		−65	+150	°C

Note

1.Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”.

1999 Apr 26

2

Philips Semiconductors			Product specification
NPN medium power transistors			BSP41; BSP43
THERMAL CHARACTERISTICS
SYMBOL	PARAMETER	CONDITIONS	VALUE	UNIT
Rth j-a	thermal resistance from junction to ambient	note 1	93	K/W
Rth j-s	thermal resistance from junction to soldering point		12	K/W

Note

1.Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”.

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
ICBO	collector cut-off current	IE = 0; VCB = 60 V	−	100	nA
		IE = 0; VCB = 60 V; Tj = 150 °C	−	50	μA
IEBO	emitter cut-off current	IC = 0; VEB = 5 V	−	100	nA
hFE	DC current gain	IC = 100 μA; VCE = 5 V; note 1	30	−
		IC = 100 mA; VCE = 5 V; note 1	100	300
		IC = 500 mA; VCE = 5 V; note 1	50	−
VCEsat	collector-emitter saturation voltage	IC = 150 mA; IB = 15 mA; note 1	−	0.25	V
		IC = 500 mA; IB = 50 mA; note 1	−	0.5	V
VBEsat	base-emitter saturation voltage	IC = 150 mA; IB = 15 mA; note 1	−	1	V
		IC = 500 mA; IB = 50 mA; note 1	−	1.2	V
fT	transition frequency	IC = 50 mA; VCE = 10 V; f = 100 MHz	100	−	MHz

Note

1. Pulse test: tp ≤ 300 μs; δ ≤ 0.01.

1999 Apr 26

3