DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
BCX51; BCX52; BCX53
PNP medium power transistors
Product specification |
|
1999 Apr 19 |
|||||
Supersedes data of 1997 Jul 04 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Philips Semiconductors |
Product specification |
|
|
PNP medium power transistors |
BCX51; BCX52; BCX53 |
|
|
|
|
FEATURES
∙High current (max. 1 A)
∙Low voltage (max. 80 V).
APPLICATIONS
∙Medium power general purposes
∙Driver stages of audio amplifiers.
DESCRIPTION
PNP medium power transistor in a SOT89 plastic package. NPN complements: BCX54, BCX55 and BCX56.
MARKING
TYPE |
MARKING |
TYPE |
MARKING |
NUMBER |
CODE |
NUMBER |
CODE |
|
|
|
|
BCX51 |
AA |
BCX52-16 |
AM |
|
|
|
|
BCX51-10 |
AC |
BCX53 |
AH |
|
|
|
|
BCX51-16 |
AD |
BCX53-10 |
AK |
|
|
|
|
BCX52 |
AE |
BCX53-16 |
AL |
|
|
|
|
BCX52-10 |
AG |
|
|
|
|
|
|
PINNING
PIN |
DESCRIPTION |
|
|
1 |
emitter |
|
|
2 |
collector |
|
|
3 |
base |
|
|
handbook, halfpage
2
3
1
|
|
|
|
|
|
|
|
|
|
|
|
|
1 |
|
2 |
|
3 |
|
|
Bottom view |
|
|
|
|
|
MAM297 |
Fig.1 Simplified outline (SOT89) and symbol.
1999 Apr 19 |
2 |
Philips Semiconductors |
|
|
|
Product specification |
||
|
|
|
|
|
|
|
PNP medium power transistors |
|
BCX51; BCX52; BCX53 |
||||
|
|
|
|
|
|
|
LIMITING VALUES |
|
|
|
|
|
|
In accordance with the Absolute Maximum Rating System (IEC 134). |
|
|
|
|
||
|
|
|
|
|
|
|
SYMBOL |
PARAMETER |
CONDITIONS |
|
MIN. |
MAX. |
UNIT |
|
|
|
|
|
|
|
VCBO |
collector-base voltage |
open emitter |
|
|
|
|
|
BCX51 |
|
|
− |
−45 |
V |
|
BCX52 |
|
|
− |
−60 |
V |
|
BCX53 |
|
|
− |
−100 |
V |
|
|
|
|
|
|
|
VCEO |
collector-emitter voltage |
open base |
|
|
|
|
|
BCX51 |
|
|
− |
−45 |
V |
|
BCX52 |
|
|
− |
−60 |
V |
|
BCX53 |
|
|
− |
−80 |
V |
|
|
|
|
|
|
|
VEBO |
emitter-base voltage |
open collector |
|
− |
−5 |
V |
IC |
collector current (DC) |
|
|
− |
−1 |
A |
ICM |
peak collector current |
|
|
− |
−1.5 |
A |
IBM |
peak base current |
|
|
− |
−200 |
mA |
Ptot |
total power dissipation |
Tamb ≤ 25 °C; note 1 |
|
− |
1.3 |
W |
Tstg |
storage temperature |
|
|
−65 |
+150 |
°C |
Tj |
junction temperature |
|
|
− |
150 |
°C |
Tamb |
operating ambient temperature |
|
|
−65 |
+150 |
°C |
Note
1.Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
THERMAL CHARACTERISTICS
SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT |
|
|
|
|
|
Rth j-a |
thermal resistance from junction to ambient |
note 1 |
94 |
K/W |
Rth j-s |
thermal resistance from junction to soldering point |
note 1 |
14 |
K/W |
Note
1.Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
1999 Apr 19 |
3 |