Philips BCX53-16, BCX53-10, BCX53, BCX52-10, BCX51-16 Datasheet

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Philips BCX53-16, BCX53-10, BCX53, BCX52-10, BCX51-16 Datasheet

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D109

BCX51; BCX52; BCX53

PNP medium power transistors

Product specification

 

1999 Apr 19

Supersedes data of 1997 Jul 04

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Philips Semiconductors

Product specification

 

 

PNP medium power transistors

BCX51; BCX52; BCX53

 

 

 

 

FEATURES

High current (max. 1 A)

Low voltage (max. 80 V).

APPLICATIONS

Medium power general purposes

Driver stages of audio amplifiers.

DESCRIPTION

PNP medium power transistor in a SOT89 plastic package. NPN complements: BCX54, BCX55 and BCX56.

MARKING

TYPE

MARKING

TYPE

MARKING

NUMBER

CODE

NUMBER

CODE

 

 

 

 

BCX51

AA

BCX52-16

AM

 

 

 

 

BCX51-10

AC

BCX53

AH

 

 

 

 

BCX51-16

AD

BCX53-10

AK

 

 

 

 

BCX52

AE

BCX53-16

AL

 

 

 

 

BCX52-10

AG

 

 

 

 

 

 

PINNING

PIN

DESCRIPTION

 

 

1

emitter

 

 

2

collector

 

 

3

base

 

 

handbook, halfpage

2

3

1

 

 

 

 

 

 

 

 

 

 

 

 

 

1

 

2

 

3

 

Bottom view

 

 

 

 

 

MAM297

Fig.1 Simplified outline (SOT89) and symbol.

1999 Apr 19

2

Philips Semiconductors

 

 

 

Product specification

 

 

 

 

 

 

 

PNP medium power transistors

 

BCX51; BCX52; BCX53

 

 

 

 

 

 

 

LIMITING VALUES

 

 

 

 

 

In accordance with the Absolute Maximum Rating System (IEC 134).

 

 

 

 

 

 

 

 

 

 

 

SYMBOL

PARAMETER

CONDITIONS

 

MIN.

MAX.

UNIT

 

 

 

 

 

 

 

VCBO

collector-base voltage

open emitter

 

 

 

 

 

BCX51

 

 

45

V

 

BCX52

 

 

60

V

 

BCX53

 

 

100

V

 

 

 

 

 

 

 

VCEO

collector-emitter voltage

open base

 

 

 

 

 

BCX51

 

 

45

V

 

BCX52

 

 

60

V

 

BCX53

 

 

80

V

 

 

 

 

 

 

 

VEBO

emitter-base voltage

open collector

 

5

V

IC

collector current (DC)

 

 

1

A

ICM

peak collector current

 

 

1.5

A

IBM

peak base current

 

 

200

mA

Ptot

total power dissipation

Tamb 25 °C; note 1

 

1.3

W

Tstg

storage temperature

 

 

65

+150

°C

Tj

junction temperature

 

 

150

°C

Tamb

operating ambient temperature

 

 

65

+150

°C

Note

1.Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.

For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

 

 

 

 

 

Rth j-a

thermal resistance from junction to ambient

note 1

94

K/W

Rth j-s

thermal resistance from junction to soldering point

note 1

14

K/W

Note

1.Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.

For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.

1999 Apr 19

3

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