Philips BC848CF, BC848BF, BC847BF, BC847CF, BC846AF Datasheet

DISCRETE SEMICONDUCTORS

DATA SHEET

M3D425

BC846F; BC847F; BC848F series

NPN general purpose transistors

Preliminary specification			1999 May 18
Supersedes data of 1998 Nov 10

Philips Semiconductors	Preliminary specification
NPN general purpose transistors	BC846F; BC847F; BC848F series

FEATURES

∙Power dissipation comparable to SOT23

∙Low current (max. 100 mA)

∙Low voltage (max. 65 V).

APPLICATIONS

∙General purpose switching and amplification, especially in portable equipment.

DESCRIPTION

NPN transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package.

PNP complements: BC856F, BC857F and BC858F series.

MARKING

TYPE	MARKING	TYPE	MARKING
NUMBER	CODE	NUMBER	CODE
BC846AF	1A	BC847CF	1G
BC846BF	1B	BC848AF	1J
BC847AF	1E	BC848BF	1K
BC847BF	1F	BC848CF	1L

PINNING

PIN	DESCRIPTION
1	base
2	emitter
3	collector

handbook, halfpage	3	3
		1
1	2	2
Top view		MAM410

Fig.1 Simplified outline (SC-89; SOT490) and symbol.

1999 May 18

2

Philips Semiconductors			Preliminary specification
NPN general purpose transistors		BC846F; BC847F; BC848F series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VCBO	collector-base voltage	open emitter
	BC846AF; BC846BF		−	80	V
	BC847AF; BC847BF; BC847CF		−	50	V
	BC848AF; BC848BF; BC848CF		−	30	V
VCEO	collector-emitter voltage	open base
	BC846AF; BC846BF		−	65	V
	BC847AF; BC847BF; BC847CF		−	45	V
	BC848AF; BC848BF; BC848CF		−	30	V
VEBO	emitter-base voltage	open collector	−	5	V
IC	collector current (DC)		−	100	mA
ICM	peak collector current		−	200	mA
IBM	peak base current		−	100	mA
Ptot	total power dissipation	Tamb ≤ 25 °C; note 1	−	250	mW
Tstg	storage temperature		−65	+150	°C
Tj	junction temperature		−	150	°C
Tamb	operating ambient temperature		−65	+150	°C

Note

1. Transistor mounted on an FR4 printed-circuit board.

1999 May 18

3