Philips BC857BT, BC857CT, BC856BT, BC857AT, BC856AT Datasheet

DISCRETE SEMICONDUCTORS

DATA SHEET

M3D173

BC856T; BC857T

PNP general purpose transistors

Product specification			1999 Apr 26
Supersedes data of 1997 Jul 07

Philips Semiconductors	Product specification
PNP general purpose transistors	BC856T; BC857T

FEATURES

∙Low current (max. 100 mA)

∙Low voltage (max. 65 V).

APPLICATIONS

∙General purpose switching and amplification especially in portable equipment.

DESCRIPTION

PNP transistor in an SC-75 plastic package. NPN complements: BC846T and BC847T.

MARKING

TYPE	MARKING	TYPE	MARKING
NUMBER	CODE	NUMBER	CODE
BC856AT	3A	BC857BT	3F
BC856BT	3B	BC857CT	3G
BC857AT	3E

LIMITING VALUES

PINNING

PIN	DESCRIPTION
1	base
2	emitter
3	collector

handbook, halfpage					3			3
								1
								2
1							2
Top view										MAM362

Fig.1 Simplified outline (SC-75) and symbol.

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VCBO	collector-base voltage	open emitter
	BC856AT; BC856BT		−	−80	V
	BC857AT; BC857BT; BC857CT		−	−50	V
VCEO	collector-emitter voltage	open base
	BC856AT; BC856BT		−	−65	V
	BC857AT; BC857BT; BC857CT		−	−45	V
VEBO	emitter-base voltage	open collector	−	−5	V
IC	collector current (DC)		−	−100	mA
ICM	peak collector current		−	−200	mA
IBM	peak base current		−	−100	mA
Ptot	total power dissipation	Tamb ≤ 25 °C; note 1	−	150	mW
Tstg	storage temperature		−65	+150	°C
Tj	junction temperature		−	150	°C
Tamb	operating ambient temperature		−65	+150	°C

Note

1. Transistor mounted on an FR4 printed-circuit board.

1999 Apr 26

2

Philips Semiconductors			Product specification
PNP general purpose transistors			BC856T; BC857T
THERMAL CHARACTERISTICS
SYMBOL	PARAMETER	CONDITIONS	VALUE	UNIT
Rth j-a	thermal resistance from junction to ambient	note 1	833	K/W

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
ICBO	collector cut-off current	IE = 0; VCB = −30 V	−	−	−15	nA
		IE = 0; VCB = −30 V; Tj = 150 °C	−	−	−5	μA
IEBO	emitter cut-off current	IC = 0; VEB = −5 V	−	−	−100	nA
hFE	DC current gain	IC = −2 mA; VCE = −5 V
	BC856AT; BC857AT		125	−	250
	BC856BT; BC857BT		220	−	475
	BC857CT		420	−	800
VCEsat	collector-emitter saturation voltage	IC = −10 mA; IB = −0.5 mA	−	−	−200	mV
		IC = −100 mA; IB = −5 mA; note 1	−	−	−400	mV
VBE	base-emitter voltage	IC = −2 mA; VCE = −5 V	−600	−	−750	mV
		IC = −10 mA; VCE = −5 V	−	−	−820	mV
Cc	collector capacitance	IE = ie = 0; VCB = −10 V; f = 1 MHz	−	−	2.5	pF
Ce	emitter capacitance	IC = ic = 0; VEB = −500 mV; f = 1 MHz	−	10	−	pF
fT	transition frequency	IC = −10 mA; VCE = −5 V; f = 100 MHz	100	−	−	MHz
F	noise figure	IC = −200 μA; VCE = −5 V; RS = 2 kΩ;	−	−	10	dB
		f = 1 kHz; B = 220 Hz
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

1999 Apr 26

3