DISCRETE SEMICONDUCTORS
DATA SHEET
BF510 to 513
N-channel silicon field-effect transistors
Product specification |
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December 1997 |
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File under Discrete Semiconductors, SC07 |
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Philips Semiconductors |
Product specification |
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N-channel silicon field-effect transistors |
BF510 to 513 |
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DESCRIPTION
Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended for applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special features are the low feedback capacitance and the low noise figure. These features make the product very suitable for applications such as the r.f. stages in f.m. portables (BF510), car radios (BF511) and mains radios (BF512) or the mixer stage (BF513).
PINNING - SOT23
1= gate
2= drain
3= source
MARKING CODE
BF510 = S6p
BF511 = S7p
BF512 = S8p
BF513 = S9p
handbook, halfpage |
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Top view |
MAM385 |
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
Drain-source voltage |
VDS |
max. |
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20 |
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V |
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Drain current (DC or average) |
ID |
max. |
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30 |
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mA |
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Total power dissipation |
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up to Tamb = 40 °C |
Ptot |
max. |
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250 |
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mW |
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BF510 |
511 |
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512 |
513 |
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Drain current |
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0.7 |
2.5 |
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6 |
10 |
mA |
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VDS = 10 V; VGS = 0 |
IDSS |
< |
3.0 |
7.0 |
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12 |
18 |
mA |
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Transfer admittance (common source) |
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VDS = 10 V; VGS = 0; f = 1 kHz |
÷ yfs ê |
> |
2.5 |
4 |
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6 |
7 |
mS |
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Feedback capacitance |
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VDS = 10 |
V; VGS = 0 |
Crs |
typ. |
0.3 |
0.3 |
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- |
- |
pF |
VDS = 10 |
V; ID = 5 mA |
Crs |
typ. |
- |
- |
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0.3 |
0.3 |
pF |
Noise figure at optimum source admittance |
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GS = 1 mS; -BS = 3 mS; f = 100 MHz |
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VDS = 10 |
V; VGS = 0 |
F |
typ. |
1.5 |
1.5 |
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- |
- |
dB |
VDS = 10 |
V; ID = 5 mA |
F |
typ. |
- |
- |
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1.5 |
1.5 |
dB |
December 1997 |
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Philips Semiconductors |
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Product specification |
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N-channel silicon field-effect transistors |
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BF510 to 513 |
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RATINGS |
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Limiting values in accordance with the Absolute Maximum System (IEC 134) |
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Drain-source voltage |
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VDS |
max. |
20 |
V |
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Drain-gate voltage (open source) |
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VDGO |
max. |
20 |
V |
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Drain current (DC or average) |
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ID |
max. |
30 |
mA |
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Gate current |
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± IG |
max. |
10 |
mA |
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Total power dissipation up to Tamb = 40 °C (note 1) |
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Ptot |
max. |
250 |
mW |
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Storage temperature range |
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Tstg |
−65 to + 150 |
°C |
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Junction temperature |
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Tj |
max. |
150 |
°C |
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THERMAL RESISTANCE |
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From junction to ambient (note 1) |
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Rth j-a |
= |
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430 |
K/W |
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Note |
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1. Mounted on a ceramic substrate of 8 mm × 10 mm × 0.7 mm. |
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STATIC CHARACTERISTICS |
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Tamb = 25 °C |
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BF510 |
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511 |
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512 |
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513 |
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Gate cut-off current |
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−VGS = 0.2 V; VDS = 0 |
−IGSS |
< |
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10 |
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10 |
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10 |
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10 |
nA |
Gate-drain breakdown voltage |
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IS = 0; −ID = 10 μA |
−V(BR)GDO |
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20 |
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20 |
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20 |
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20 |
V |
Drain current |
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> |
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0.7 |
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2.5 |
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6 |
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10 |
mA |
VDS = 10 V; VGS = 0 |
IDSS |
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< |
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3.0 |
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7.0 |
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12 |
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18 |
mA |
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Gate-source cut-off voltage |
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ID = 10 μA; VDS = 10 V |
−V(P)GS |
typ. |
0.8 |
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1.5 |
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2.2 |
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3 |
V |
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December 1997 |
3 |
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