Philips BD139-16, BD139, BD135, BD137-16, BD137-10 Datasheet
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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D100
BD135; BD137; BD139
NPN power transistors
Product specification |
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1999 Apr 12 |
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Supersedes data of 1997 Mar 04 |
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Philips Semiconductors |
Product specification |
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NPN power transistors |
BD135; BD137; BD139 |
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FEATURES
∙High current (max. 1.5 A)
∙Low voltage (max. 80 V).
APPLICATIONS
∙ Driver stages in hi-fi amplifiers and television circuits.
DESCRIPTION
NPN power transistor in a TO-126; SOT32 plastic package. PNP complements: BD136, BD138 and BD140.
PINNING
PIN |
DESCRIPTION |
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1 |
emitter |
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2 |
collector, connected to metal part of |
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mounting surface |
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3 |
base |
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handbook, halfpage
2
3
1
1 2 3 Top view MAM254
Fig.1 Simplified outline (TO-126; SOT32) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VCBO |
collector-base voltage |
open emitter |
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BD135 |
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− |
45 |
V |
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BD137 |
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− |
60 |
V |
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BD139 |
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− |
100 |
V |
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VCEO |
collector-emitter voltage |
open base |
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BD135 |
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− |
45 |
V |
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BD137 |
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− |
60 |
V |
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BD139 |
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− |
80 |
V |
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VEBO |
emitter-base voltage |
open collector |
− |
5 |
V |
IC |
collector current (DC) |
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− |
1.5 |
A |
ICM |
peak collector current |
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− |
2 |
A |
IBM |
peak base current |
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− |
1 |
A |
Ptot |
total power dissipation |
Tmb ≤ 70 °C |
− |
8 |
W |
Tstg |
storage temperature |
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−65 |
+150 |
°C |
Tj |
junction temperature |
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− |
150 |
°C |
Tamb |
operating ambient temperature |
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−65 |
+150 |
°C |
1999 Apr 12 |
2 |
Philips Semiconductors |
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Product specification |
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NPN power transistors |
BD135; BD137; BD139 |
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THERMAL CHARACTERISTICS |
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SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT |
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Rth j-a |
thermal resistance from junction to ambient |
note 1 |
100 |
K/W |
Rth j-mb |
thermal resistance from junction to mounting base |
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10 |
K/W |
Note
1. Refer to TO-126; SOT32 standard mounting conditions.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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ICBO |
collector cut-off current |
IE = 0; VCB = 30 V |
- |
- |
100 |
nA |
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IE = 0; VCB = 30 V; Tj = 125 °C |
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- |
10 |
mA |
IEBO |
emitter cut-off current |
IC = 0; VEB = 5 V |
- |
- |
100 |
nA |
hFE |
DC current gain |
VCE = 2 V; (see Fig.2) |
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IC = 5 mA |
40 |
- |
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IC = 150 mA |
63 |
- |
250 |
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IC = 500 mA |
25 |
- |
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DC current gain |
IC = 150 mA; VCE = 2 V; |
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BD135-10; BD137-10; BD139-10 |
(see Fig.2) |
63 |
- |
160 |
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BD135-16; BD137-16; BD139-16 |
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100 |
- |
250 |
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VCEsat |
collector-emitter saturation voltage |
IC = 500 mA; IB = 50 mA |
- |
- |
0.5 |
V |
VBE |
base-emitter voltage |
IC = 500 mA; VCE = 2 V |
- |
- |
1 |
V |
fT |
transition frequency |
IC = 50 mA; VCE = 5 V; |
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190 |
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MHz |
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f = 100 MHz |
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hFE1 |
DC current gain ratio of the |
ïICï = 150 mA; ïVCEï = 2 V |
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1.3 |
1.6 |
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----------- |
complementary pairs |
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hFE2 |
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1999 Apr 12 |
3 |
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