DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
BC846T; BC847T
NPN general purpose transistors
Preliminary specification |
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1999 Apr 26 |
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Supersedes data of 1997 Jul 07 |
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Philips Semiconductors |
Preliminary specification |
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NPN general purpose transistors |
BC846T; BC847T |
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FEATURES
∙Low current (max. 100 mA)
∙Low voltage (max. 65 V).
APPLICATIONS
∙General purpose switching and amplification, especially in portable communication equipment
∙Electronic data processing (EDP) and consumer applications.
DESCRIPTION
NPN transistor in an SC-75 plastic package. PNP complements: BC856T and BC857T.
MARKING
TYPE |
MARKING |
TYPE |
MARKING |
NUMBER |
CODE |
NUMBER |
CODE |
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BC846AT |
1A |
BC847BT |
1F |
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BC846BT |
1B |
BC847CT |
1G |
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BC847AT |
1E |
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LIMITING VALUES
PINNING
PIN |
DESCRIPTION |
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1 |
base |
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2 |
emitter |
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3 |
collector |
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handbook, halfpage |
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3 |
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3 |
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Top view |
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MAM348 |
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Fig.1 Simplified outline (SC-75) and symbol.
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VCBO |
collector-base voltage |
open emitter |
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BC846AT; BC846BT |
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− |
80 |
V |
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BC847AT; BC847BT; BC847CT |
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− |
50 |
V |
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VCEO |
collector-emitter voltage |
open base |
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BC846AT; BC846BT |
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65 |
V |
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BC847AT; BC847BT; BC847CT |
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45 |
V |
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VEBO |
emitter-base voltage |
open collector |
− |
5 |
V |
IC |
collector current (DC) |
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100 |
mA |
ICM |
peak collector current |
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200 |
mA |
IBM |
peak base current |
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− |
100 |
mA |
Ptot |
total power dissipation |
Tamb ≤ 25 °C; note 1 |
− |
150 |
mW |
Tstg |
storage temperature |
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−65 |
+150 |
°C |
Tj |
junction temperature |
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− |
150 |
°C |
Tamb |
operating ambient temperature |
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−65 |
+150 |
°C |
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 26 |
2 |
Philips Semiconductors |
|
Preliminary specification |
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|
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NPN general purpose transistors |
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BC846T; BC847T |
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THERMAL CHARACTERISTICS |
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SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT |
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Rth j-a |
thermal resistance from junction to ambient |
note 1 |
833 |
K/W |
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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ICBO |
collector cut-off current |
IE = 0; VCB = 30 V |
− |
− |
15 |
nA |
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IE = 0; VCB = 30 V; Tj = 150 °C |
− |
− |
5 |
μA |
IEBO |
emitter cut-off current |
IC = 0; VEB = 5 V |
− |
− |
100 |
nA |
hFE |
DC current gain |
IC = 2 mA; VCE = 5 V |
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BC846AT; BC847AT |
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110 |
− |
220 |
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BC846BT; BC847BT |
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200 |
− |
450 |
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BC847CT |
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420 |
− |
800 |
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VCEsat |
collector-emitter saturation |
IC = 10 mA; IB = 0.5 mA |
− |
− |
200 |
mV |
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voltage |
IC = 100 mA; IB = 5 mA; note 1 |
− |
− |
400 |
mV |
VBE |
base-emitter voltage |
IC = 2 mA; VCE = 5 V |
580 |
− |
700 |
mV |
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IC = 10 mA; VCE = 5 V |
− |
− |
770 |
mV |
Cc |
collector capacitance |
IE = ie = 0; VCB = 10 V; f = 1 MHz |
− |
− |
1.5 |
pF |
Ce |
emitter capacitance |
IC = ic = 0; VEB = 500 mV; f = 1 MHz |
− |
11 |
− |
pF |
fT |
transition frequency |
IC = 10 mA; VCE = 5 V; f = 100 MHz |
100 |
− |
− |
MHz |
F |
noise figure |
IC = 200 μA; VCE = 5 V; RS = 2 kΩ; |
− |
− |
10 |
dB |
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f = 1 kHz; B = 200 Hz |
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Note |
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1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. |
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1999 Apr 26 |
3 |
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