Philips BCP56-16, BCP56-10, BCP54-16, BCP54-10, BCP55-16 Datasheet

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D087

BCP54; BCP55; BCP56

NPN medium power transistors

Product specification			1999 Apr 08
Supersedes data of 1997 Apr 08

Philips Semiconductors	Product specification
NPN medium power transistors	BCP54; BCP55; BCP56

FEATURES

∙High current (max. 1 A)

∙Low voltage (max. 80 V).

APPLICATIONS

∙ Switching.

DESCRIPTION

NPN medium power transistor in a SOT223 plastic package. PNP complements: BCP51, BCP52 and BCP53.

PINNING

PIN									DESCRIPTION
1				base
2, 4				collector
3				emitter
handbook, halfpage								4
								2, 4
								1
									3
			1			2			3
	Top view								MAM287
Fig.1	Simplified outline (SOT223) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VCBO	collector-base voltage	open emitter
	BCP54		−	45	V
	BCP55		−	60	V
	BCP56		−	100	V
VCEO	collector-emitter voltage	open base
	BCP54		−	45	V
	BCP55		−	60	V
	BCP56		−	80	V
VEBO	emitter-base voltage	open collector	−	5	V
IC	collector current (DC)		−	1	A
ICM	peak collector current		−	1.5	A
IBM	peak base current		−	0.2	A
Ptot	total power dissipation	Tamb ≤ 25 °C; note 1	−	1.33	W
Tstg	storage temperature		−65	+150	°C
Tj	junction temperature		−	150	°C
Tamb	operating ambient temperature		−65	+150	°C

Note

1.Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.

For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”.

1999 Apr 08

2

Philips Semiconductors			Product specification
NPN medium power transistors		BCP54; BCP55; BCP56
THERMAL CHARACTERISTICS
SYMBOL	PARAMETER	CONDITIONS	VALUE	UNIT
Rth j-a	thermal resistance from junction to ambient	note 1	94	K/W
Rth j-s	thermal resistance from junction to soldering point		13	K/W

Note

1.Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.

For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”.

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
ICBO	collector cut-off current	IE = 0; VCB = 30 V	-	-	100	nA
		IE = 0; VCB = 30 V; Tj = 125 °C	-	-	10	mA
IEBO	emitter cut-off current	IC = 0; VEB = 5 V	-	-	100	nA
hFE	DC current gain	IC = 5 mA; VCE = 2 V	25	-	-
		IC = 150 mA; VCE = 2 V	63	-	250
		IC = 500 mA; VCE = 2 V	25	-	-
hFE	DC current gain	IC = 150 mA; VCE = 2 V		-
	BCP55-10; 56-10		63	-	160
	BCP54-16; 55-16; 56-16		100	-	250
VCEsat	collector-emitter saturation voltage	IC = 0.5 A; IB = 50 mA	-	-	500	mV
VBE	base-emitter voltage	IC = 0.5 A; VCE = 2 V	-	-	1	V
fT	transition frequency	IC = 10 mA; VCE = 5 V; f = 100 MHz	-	130	-	MHz
hFE1	DC current gain ratio of the	ïICï = 150 mA; ïVCEï = 2 V	-	-	1.6
-----------	complementary pairs
hFE2

1999 Apr 08

3