Philips BC858CF, BC857BF, BC858AF, BC857CF, BC858BF Datasheet

DISCRETE SEMICONDUCTORS

DATA SHEET

M3D425

BC856F; BC857F; BC858F series

PNP general purpose transistors

Preliminary specification			1999 May 21
Supersedes data of 1998 Nov 10

Philips Semiconductors	Preliminary specification
PNP general purpose transistors	BC856F; BC857F; BC858F series

FEATURES

∙Power dissipation comparable to SOT23

∙Low current (max. 100 mA)

∙Low voltage (max. 65 V).

APPLICATIONS

∙General purpose switching and amplification especially in portable equipment.

DESCRIPTION

PNP transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package.

NPN complements: BC846F, BC847F and BC848F series.

MARKING

TYPE	MARKING	TYPE	MARKING
NUMBER	CODE	NUMBER	CODE
BC856AF	3A	BC857CF	3G
BC856BF	3B	BC858AF	3J
BC857AF	3E	BC858BF	3K
BC857BF	3F	BC858CF	3L

PINNING

PIN	DESCRIPTION
1	base
2	emitter
3	collector

handbook, halfpage	3	3
		1
1	2	2
Top view		MAM411

Fig.1 Simplified outline (SC-89; SOT490) and symbol.

1999 May 21

2

Philips Semiconductors			Preliminary specification
PNP general purpose transistors		BC856F; BC857F; BC858F series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VCBO	collector-base voltage	open emitter
	BC856AF; BC856BF		−	−80	V
	BC857AF; BC857BF; BC857CF		−	−50	V
	BC858AF; BC858BF; BC858CF		−	−30	V
VCEO	collector-emitter voltage	open base
	BC856AF; BC856BF		−	−65
	BC857AF; BC857BF; BC857CF		−	−45
	BC858AF; BC858BF; BC858CF		−	−30
VEBO	emitter-base voltage	open collector	−	−5	V
IC	collector current (DC)		−	−100	mA
ICM	peak collector current		−	−200	mA
IBM	peak base current		−	−100	mA
Ptot	total power dissipation	Tamb ≤ 25 °C; note 1	−	250	mW
Tstg	storage temperature		−65	+150	°C
Tj	junction temperature		−	150	°C
Tamb	operating ambient temperature		−65	+150	°C

Note

1. Transistor mounted on an FR4 printed-circuit board.

1999 May 21

3