DISCRETE SEMICONDUCTORS
DATA SHEET
BF547W
NPN 1 GHz wideband transistor
Product specification |
June 1994 |
Supersedes data of November 1992 |
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File under Discrete Semiconductors, SC14 |
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Philips Semiconductors
Philips Semiconductors |
Product specification |
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NPN 1 GHz wideband transistor |
BF547W |
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FEATURES
∙Stable oscillator operation
∙High current gain
∙Good thermal stability.
APPLICATIONS
It is primarily intended as a mixer, oscillator and IF amplifier in UHF and VHF tuners.
QUICK REFERENCE DATA
DESCRIPTION
Silicon NPN transistor in a plastic SOT323 (S-mini) package. The BF547W uses the same crystal as the SOT23 version, BF547.
PINNING
PIN |
DESCRIPTION |
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1 |
base |
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2 |
emitter |
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3 |
collector |
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3
1 |
2 |
Top view |
MBC870 |
Marking code: E2.
Fig.1 SOT323
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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VCBO |
collector-base voltage |
open emitter |
− |
− |
30 |
V |
VCEO |
collector-emitter voltage |
open base |
− |
− |
20 |
V |
IC |
collector current (DC) |
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− |
− |
50 |
mA |
Ptot |
total power dissipation |
up to Ts = 63 °C; note 1 |
− |
− |
300 |
mW |
hFE |
DC current gain |
IC = 2 mA; VCE = 10 V |
40 |
95 |
250 |
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Cre |
feedback capacitance |
IC = 0; VCB = 10 V; f = 1 MHz |
− |
1 |
− |
pF |
fT |
transition frequency |
IC = 15 mA; VCE = 10 V; |
0.8 |
1.2 |
1.6 |
GHz |
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f = 500 MHz |
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GUM |
maximum unilateral power gain |
IC = 1 mA; VCE = 10 V; |
− |
20 |
− |
dB |
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f = 100 MHz; Tamb = 25 °C |
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LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VCBO |
collector-base voltage |
open emitter |
− |
30 |
V |
VCEO |
collector-emitter voltage |
open base |
− |
20 |
V |
VEBO |
emitter-base voltage |
open collector |
− |
3 |
V |
IC |
collector current (DC) |
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− |
50 |
mA |
Ptot |
total power dissipation |
up to Ts = 63 °C; note 1 |
− |
300 |
mW |
Tstg |
storage temperature |
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−65 |
+150 |
°C |
Tj |
junction temperature |
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− |
+150 |
°C |
Note to the “Quick reference data” and “Limiting values”
1. Ts is the temperature at the soldering point of the collector pin.
June 1994 |
2 |
Philips Semiconductors |
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Product specification |
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NPN 1 GHz wideband transistor |
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BF547W |
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THERMAL CHARACTERISTICS |
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SYMBOL |
PARAMETER |
CONDITIONS |
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VALUE |
UNIT |
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Rth j-s |
thermal resistance from junction to soldering point |
up to Ts = 63 °C; note 1 |
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290 |
K/W |
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj = 25 °C (unless otherwise specified).
SYMBOL |
PARAMETER |
CONDITIONS |
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MIN. |
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TYP. |
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MAX. |
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UNIT |
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V(BR)CBO |
collector-base breakdown |
IC = 0.01 mA; IE = 0 |
− |
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− |
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30 |
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V |
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voltage |
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V(BR)CEO |
collector-emitter breakdown |
IC = 10 mA; IB = 0 |
− |
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− |
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20 |
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V |
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voltage |
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V(BR)EBO |
emitter-base breakdown voltage |
IE = 0.01 mA; IC = 0 |
− |
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− |
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3 |
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V |
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ICBO |
collector cut-off current |
IE = 0; VCB = 10 V |
− |
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− |
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100 |
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nA |
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hFE |
DC current gain |
IC = 2 mA; VCE = 10 V |
40 |
95 |
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250 |
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Cre |
feedback capacitance |
IC = 0; VCB = 10 V; f = 1 MHz |
− |
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1 |
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− |
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pF |
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fT |
transition frequency |
IC = 15 mA; VCE = 10 V; |
0.8 |
1.2 |
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1.6 |
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GHz |
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f = 500 MHz |
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GUM |
maximum unilateral power gain; |
IC = 1 mA; VCE = 10 V; |
− |
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20 |
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− |
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dB |
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note 1 |
f = 100 MHz; Tamb = 25 °C; |
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Note |
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s21 |
2 |
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1. GUM is the maximum unilateral power gain, assuming s12 is zero.GUM = 10 |
log |
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dB. |
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( 1 – |
s |
11 |
2) ( 1 – |
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22 |
2) |
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June 1994 |
3 |
Philips Semiconductors |
Product specification |
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NPN 1 GHz wideband transistor |
BF547W |
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400 |
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MLB587 |
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handbook, halfpage |
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Ptot |
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(mW) |
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300 |
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200 |
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100 |
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0 |
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0 |
50 |
100 |
150 |
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200 |
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T |
s |
( o C) |
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Fig.2 Power derating curve.
2 |
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MLB588 |
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handbook, halfpage |
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C re |
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(pF) |
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1.6 |
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1.2 |
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0.8 |
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0.4 |
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0 |
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0 |
4 |
8 |
12 |
16 |
20 |
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VCB (V) |
IC = 0; f = 1 MHz.
Fig.4 Feedback capacitance as a function of collector-base voltage; typical values.
MBB397
140 handbook, halfpage
hFE
100
60
20 |
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1 |
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102 |
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10 |
1 |
10 |
I C |
(mA) |
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VCE = 10 V; Tj = 25 °C.
Fig.3 DC current gain as a function of collector current; typical values.
MLB589
1.4 handbook, halfpage
f T (GHz)
1
0.6
0.2 |
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1 |
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102 |
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10 |
1 |
10 |
I C |
(mA) |
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VCE = 10 V; f = 500 MHz.
Fig.5 Transition frequency as a function of collector current; typical values.
June 1994 |
4 |
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