BC860W
DATA SH EET
Product specification
Supersedes data of 1997 Sep 03
1999 Apr 12
DISCRETE SEMICONDUCTORS
BC859W; BC860W
PNP general purpose transistors
ook, halfpage
M3D187
1999 Apr 12 2
Philips Semiconductors Product specification
PNP general purpose transistors BC859W; BC860W
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• Low noise stages in tape recorders, hi-fi amplifiers and
other audio-frequency equipment.
DESCRIPTION
PNP transistor in a SOT323 plastic package.
NPN complements: BC849W and BC850W.
MARKING
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BC859W 4D∗ BC860W 4H∗
BC859BW 4B∗ BC860BW 4F∗
BC859CW 4C∗ BC860CW 4G∗
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
Fig.1 Simplified outline (SOT323) and symbol.
handbook, halfpage
MAM048
Top view
2
1
3
2
3
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BC859W −−30 V
BC860W −−50 V
V
CEO
collector-emitter voltage open base
BC859W −−30 V
BC860W −−45 V
V
EBO
emitter-base voltage open collector −−5V
I
C
collector current (DC) −−100 mA
I
CM
peak collector current −−200 mA
I
BM
peak base current −−200 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 200 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
1999 Apr 12 3
Philips Semiconductors Product specification
PNP general purpose transistors BC859W; BC860W
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
=25°C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 µs; δ≤0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 625 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector cut-off current IE= 0; VCB= −30 V −−−15 nA
I
E
= 0; VCB= −30 V; Tj= 150 °C −−−4µA
I
EBO
emitter cut-off current IC= 0; VEB= −5V −−−100 nA
h
FE
DC current gain IC= −2 mA; VCE= −5V;
see Figs 2 and 3
BC859W; BC860W 220 − 800
BC859BW; BC860BW 220 − 475
BC859CW; BC860CW 420 − 800
V
CEsat
collector-emitter saturation
voltage
IC= −10 mA; IB= −0.5 mA −−−300 mV
I
C
= −100 mA; IB= −5 mA; note 1 −−−650 mV
V
BE
base-emitter voltage IC= −2 mA; VCE= −5 V 600 − 750 mV
I
C
= −10 mA; VCE= −5V −−820 mV
C
c
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz −−5pF
C
e
emitter capacitance IC=ic= 0; VEB= −500 mV; f = 1 MHz − 10 − pF
f
T
transition frequency IC= −10 mA; VCE= −5 V; f = 100 MHz 100 −−MHz
F noise figure;
BC859W; BC860W;
BC859BW; BC860BW;
BC859CW; BC860CW
I
C
= −200 µA; VCE= −5 V; RS=2kΩ;
f = 10 Hz to 15.7 kHz
−−4dB
I
C
=−200 µA; VCE= −5 V; RS=2kΩ;
f = 1 kHz; B = 200 Hz
−−4dB
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