Philips BCV61C, BCV61B, BCV61A Datasheet

DISCRETE SEMICONDUCTORS

DATA SHEET

M3D071

BCV61

NPN general purpose double transistor

Product specification			1999 Apr 08
Supersedes data of 1997 Jun 16

Philips Semiconductors	Product specification
NPN general purpose double transistor	BCV61

FEATURES

∙Low current (max. 100 mA)

∙Low voltage (max. 30 V)

∙Matched pairs.

APPLICATIONS

∙For use in applications where the working point must be independent of temperature

∙Current mirrors.

DESCRIPTION

NPN double transistor in a SOT143B plastic package. PNP complement: BCV62.

MARKING

TYPE	MARKING	TYPE	MARKING
NUMBER	CODE	NUMBER	CODE
BCV61	1Mp	BCV61B	1Kp
BCV61A	1Jp	BCV61C	1Lp

LIMITING VALUES

PINNING

PIN	DESCRIPTION
1	collector TR2; base TR1 and TR2
2	collector TR1
3	emitter TR1
4	emitter TR2

			3
handbook,	halfpage
	4				2	1

TR1 TR2

		1	2		3	4
Top view					MAM293

Fig.1 Simplified outline (SOT143B) and symbol.

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VCBO	collector-base voltage TR1	open emitter	−	30	V
VCEO	collector-emitter voltage TR1	open base	−	30	V
VEBS	emitter-base voltage	VCE = 0	−	6	V
IC	collector current (DC)		−	100	mA
ICM	peak collector current		−	200	mA
IBM	peak base current TR1		−	200	mA
Ptot	total power dissipation	Tamb ≤ 25 °C; note 1	−	250	mW
Tstg	storage temperature		−65	+150	°C
Tj	junction temperature		−	150	°C
Tamb	operating ambient temperature		−65	+150	°C

Note

1. Transistor mounted on an FR4 printed-circuit board.

1999 Apr 08

2

Philips Semiconductors				Product specification
NPN general purpose double transistor					BCV61
THERMAL CHARACTERISTICS
SYMBOL	PARAMETER	CONDITIONS	VALUE		UNIT
Rth j-a	thermal resistance from junction to ambient	note 1	500		K/W

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
Transistor TR1
ICBO	collector cut-off current	IE = 0; VCB = 30 V	−	−	15	nA
		IE = 0; VCB = 30 V; Tj = 150 °C	−	−	5	μA
IEBO	emitter cut-off current	IC = 0; VEB = 5 V	−	−	100	nA
hFE	DC current gain	IC = 100 μA; VCE = 5 V	100	−	−
		IC = 2 mA; VCE = 5 V	110	−	800
VCEsat	collector-emitter saturation	IC = 10 mA; IB = 0.5 mA	−	90	250	mV
	voltage	IC = 100 mA; IB = 5 mA	−	200	600	mV
VBEsat	base-emitter saturation	IC = 10 mA; IB = 0.5 mA; note 1	−	700	−	mV
	voltage	IC = 100 mA; IB = 5 mA; note 1	−	900	−	mV
VBE	base-emitter voltage	IC = 2 mA; VCE = 5 V; note 2	580	660	700	mV
		IC = 10 mA; VCE = 5 V; note 2	−	−	770	mV
Cc	collector capacitance	IE = ie = 0; VCB = 10 V; f = 1 MHz	−	2.5	−	pF
fT	transition frequency	IC = 10 mA; VCE = 5 V; f = 100 MHz	100	−	−	MHz
F	noise figure	IC = 200 μA; VCE = 5 V; RS = 2 kΩ;	−	−	10	dB
		f = 1 kHz; B = 200 Hz
Transistor TR2
VEBS	base-emitter forward voltage	VCB = 0; IE = −250 mA	−	−	−1.8	V
		VCB = 0; IE = −10 μA	−400	−	−	mV
hFE	DC current gain	IC = 2 mA; VCE = 5 V
	BCV61A		110	−	220
	BCV61B		200	−	450
	BCV61C		420	−	800

1999 Apr 08

3