DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BC846; BC847
NPN general purpose transistors
Product specification |
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1999 Apr 23 |
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Supersedes data of 1997 Mar 12 |
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Philips Semiconductors |
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Product specification |
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NPN general purpose transistors |
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BC846; BC847 |
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FEATURES |
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PINNING |
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∙ |
Low current (max. 100 mA) |
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PIN |
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DESCRIPTION |
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∙ |
Low voltage (max. 65 V). |
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1 |
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base |
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2 |
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emitter |
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APPLICATIONS |
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3 |
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collector |
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∙ |
General purpose switching and amplification. |
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DESCRIPTION |
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NPN transistor in a SOT23 plastic package. |
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PNP complements: BC856 and BC857. |
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handbook, halfpage |
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3 |
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3 |
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MARKING |
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1 |
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TYPE |
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MARKING |
TYPE |
MARKING |
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NUMBER |
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CODE |
NUMBER |
CODE(1) |
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2 |
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1 |
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2 |
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BC846 |
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1D |
BC847A |
1E |
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Top view |
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BC846A |
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1A |
BC847B |
1F |
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MAM255 |
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BC846B |
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1B |
BC847C |
1G |
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BC847 |
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1H* |
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Note |
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1. = p : Made in Hong Kong. |
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Fig.1 Simplified outline (SOT23) and symbol. |
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= t : Made in Malaysia. |
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LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VCBO |
collector-base voltage |
open emitter |
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BC846 |
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− |
80 |
V |
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BC847 |
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− |
50 |
V |
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VCEO |
collector-emitter voltage |
open base |
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BC846 |
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− |
65 |
V |
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BC847 |
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45 |
V |
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VEBO |
emitter-base voltage |
open collector |
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6 |
V |
IC |
collector current (DC) |
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− |
100 |
mA |
ICM |
peak collector current |
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− |
200 |
mA |
IBM |
peak base current |
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− |
200 |
mA |
Ptot |
total power dissipation |
Tamb ≤ 25 °C; note 1 |
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250 |
mW |
Tstg |
storage temperature |
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−65 |
+150 |
°C |
Tj |
junction temperature |
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− |
150 |
°C |
Tamb |
operating ambient temperature |
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−65 |
+150 |
°C |
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 23 |
2 |
Philips Semiconductors |
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|
Product specification |
||
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NPN general purpose transistors |
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BC846; BC847 |
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THERMAL CHARACTERISTICS |
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SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
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UNIT |
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Rth j-a |
thermal resistance from junction to ambient |
note 1 |
500 |
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K/W |
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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ICBO |
collector cut-off current |
IE = 0; VCB = 30 V |
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15 |
nA |
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IE = 0; VCB = 30 V; Tj = 150 °C |
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5 |
μA |
IEBO |
emitter cut-off current |
IC = 0; VEB = 5 V |
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− |
100 |
nA |
hFE |
DC current gain |
IC = 10 μA; VCE = 5 V; |
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BC846A; BC847A |
see Figs 2, 3 and 4 |
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90 |
− |
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BC846B; BC847B |
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150 |
− |
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BC847C |
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270 |
− |
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DC current gain |
IC = 2 mA; VCE = 5 V; |
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BC846 |
see Figs 2, 3 and 4 |
110 |
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450 |
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BC847 |
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110 |
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800 |
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BC846A;BC847A |
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110 |
180 |
220 |
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BC846B; BC847B |
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200 |
290 |
450 |
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BC847C |
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420 |
520 |
800 |
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VCEsat |
collector-emitter saturation |
IC = 10 mA; IB = 0.5 mA |
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90 |
250 |
mV |
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voltage |
IC = 100 mA; IB = 5 mA |
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200 |
600 |
mV |
VBEsat |
base-emitter saturation voltage |
IC = 10 mA; IB = 0.5 mA; note 1 |
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700 |
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mV |
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IC = 100 mA; IB = 5 mA; note 1 |
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900 |
− |
mV |
VBE |
base-emitter voltage |
IC = 2 mA; VCE = 5 V; note 2 |
580 |
660 |
700 |
mV |
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IC = 10 mA; VCE = 5 V; note 2 |
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− |
770 |
mV |
Cc |
collector capacitance |
IE = ie = 0; VCB = 10 V; f = 1 MHz; |
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2.5 |
− |
pF |
fT |
transition frequency |
IC = 10 mA; VCE = 5 V; f = 100 MHz; |
100 |
− |
− |
MHz |
F |
noise figure |
IC = 200 μA; VCE = 5 V; RS = 2 kΩ; |
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2 |
10 |
dB |
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f = 1 kHz; B = 200 Hz |
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Notes
1.VBEsat decreases by about 1.7 mV/K with increasing temperature.
2.VBE decreases by about 2 mV/K with increasing temperature.
1999 Apr 23 |
3 |
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