DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BC849; BC850
NPN general purpose transistors
Product specification |
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1999 Apr 08 |
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Supersedes data of 1998 Aug 06 |
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Philips Semiconductors |
Product specification |
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NPN general purpose transistors |
BC849; BC850 |
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FEATURES
∙Low current (max. 100 mA)
∙Low voltage (max. 45 V).
APPLICATIONS
∙ General purpose switching and amplification.
DESCRIPTION
NPN transistor in a SOT23 plastic package. PNP complements: BC859 and BC860.
MARKING
TYPE |
MARKING |
TYPE |
MARKING |
NUMBER |
CODE(1) |
NUMBER |
CODE(1) |
BC849B |
2B |
BC850B |
2F |
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BC849C |
2C |
BC850C |
2G |
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Note
1.= p : Made in Hong Kong.= t : Made in Malaysia.
PINNING
PIN |
DESCRIPTION |
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1 |
base |
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2 |
emitter |
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3 |
collector |
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handbook, halfpage |
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Top view |
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MAM255 |
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VCBO |
collector-base voltage |
open emitter |
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BC849 |
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− |
30 |
V |
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BC850 |
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− |
50 |
V |
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VCEO |
collector-emitter voltage |
open base |
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BC849 |
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30 |
V |
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BC850 |
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− |
45 |
V |
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VEBO |
emitter-base voltage |
open collector |
− |
5 |
V |
IC |
collector current (DC) |
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− |
100 |
mA |
ICM |
peak collector current |
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200 |
mA |
IBM |
peak base current |
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− |
200 |
mA |
Ptot |
total power dissipation |
Tamb ≤ 25 °C; note 1 |
− |
250 |
mW |
Tstg |
storage temperature |
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−65 |
+150 |
°C |
Tj |
junction temperature |
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150 |
°C |
Tamb |
operating ambient temperature |
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−65 |
+150 |
°C |
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 08 |
2 |
Philips Semiconductors |
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Product specification |
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NPN general purpose transistors |
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BC849; BC850 |
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THERMAL CHARACTERISTICS |
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SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT |
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Rth j-a |
thermal resistance from junction to ambient |
note 1 |
500 |
K/W |
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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ICBO |
collector cut-off current |
IE = 0; VCB = 30 V |
− |
− |
15 |
nA |
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IE = 0; VCB = 30 V; Tj = 150 °C |
− |
− |
5 |
μA |
IEBO |
emitter cut-off current |
IC = 0; VEB = 5 V |
− |
− |
100 |
nA |
hFE |
DC current gain |
IC = 10 μA; VCE = 5 V; |
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BC849B; BC850B |
see Figs 2 and 3 |
− |
240 |
− |
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BC849C; BC850C |
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450 |
− |
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DC current gain |
IC = 2 mA; VCE = 5 V; |
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BC849B; BC850B |
see Figs 2 and 3 |
200 |
290 |
450 |
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BC849C; BC850C |
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420 |
520 |
800 |
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VCEsat |
collector-emitter saturation |
IC = 10 mA; IB = 0.5 mA |
− |
90 |
250 |
mV |
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voltage |
IC = 100 mA; IB = 5 mA |
− |
200 |
600 |
mV |
VBEsat |
base-emitter saturation voltage |
IC = 10 mA; IB = 0.5 mA; note 1 |
− |
700 |
− |
mV |
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IC = 100 mA; IB = 5 mA; note 1 |
− |
900 |
− |
mV |
VBE |
base-emitter voltage |
IC = 2 mA; VCE = 5 V; note 2 |
580 |
660 |
700 |
mV |
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IC = 10 mA; VCE = 5 V; note 2 |
− |
− |
770 |
mV |
Cc |
collector capacitance |
IE = ie = 0; VCB = 10 V; f = 1 MHz |
− |
2.5 |
− |
pF |
Ce |
emitter capacitance |
IC = ic = 0; VEB = 500 mV; f = 1 MHz |
− |
11 |
− |
pF |
fT |
transition frequency |
IC = 10 mA; VCE = 5 V; f = 100 MHz |
100 |
− |
− |
MHz |
F |
noise figure |
IC = 200 μA; VCE = 5 V; RS = 2 kΩ; |
− |
− |
4 |
dB |
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f = 10 Hz to 15.7 kHz |
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IC = 200 μA; VCE = 5 V; RS = 2 kΩ; |
− |
− |
4 |
dB |
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f = 1 kHz; B = 200 Hz |
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Notes
1.VBEsat decreases by about 1.7 mV/K with increasing temperature.
2.VBE decreases by about 2 mV/K with increasing temperature.
1999 Apr 08 |
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