Philips BC547A, BC546B, BC547C, BC547B Datasheet

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D186

BC546; BC547

NPN general purpose transistors

Product specification			1999 Apr 15
Supersedes data of 1997 Mar 04

Philips Semiconductors	Product specification
NPN general purpose transistors	BC546; BC547

FEATURES

∙Low current (max. 100 mA)

∙Low voltage (max. 65 V).

APPLICATIONS

∙ General purpose switching and amplification.

DESCRIPTION

NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC556 and BC557.

LIMITING VALUES

PINNING

PIN						DESCRIPTION
1		emitter
2		base
3		collector
handbook, halfpage1												3
	2
	3										2
											MAM182	1
Fig.1	Simplified outline (TO-92; SOT54)
	and symbol.

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VCBO	collector-base voltage	open emitter
	BC546		−	80	V
	BC547		−	50	V
VCEO	collector-emitter voltage	open base
	BC546		−	65	V
	BC547		−	45	V
VEBO	emitter-base voltage	open collector
	BC546		−	6	V
	BC547		−	6	V
IC	collector current (DC)		−	100	mA
ICM	peak collector current		−	200	mA
IBM	peak base current		−	200	mA
Ptot	total power dissipation	Tamb ≤ 25 °C; note 1	−	500	mW
Tstg	storage temperature		−65	+150	°C
Tj	junction temperature		−	150	°C
Tamb	operating ambient temperature		−65	+150	°C

Note

1. Transistor mounted on an FR4 printed-circuit board.

1999 Apr 15

2

Philips Semiconductors				Product specification
NPN general purpose transistors			BC546; BC547
THERMAL CHARACTERISTICS
SYMBOL	PARAMETER	CONDITIONS	VALUE		UNIT
Rth j-a	thermal resistance from junction to ambient	note 1	0.25		K/mW

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
ICBO	collector cut-off current	IE = 0; VCB = 30 V	−	−	15	nA
		IE = 0; VCB = 30 V; Tj = 150 °C	−	−	5	μA
IEBO	emitter cut-off current	IC = 0; VEB = 5 V	−	−	100	nA
hFE	DC current gain	IC = 10 μA; VCE = 5 V;
	BC546A	see Figs 2, 3 and 4	−	90	−
	BC546B; BC547B		−	150	−
	BC547C		−	270	−
	DC current gain	IC = 2 mA; VCE = 5 V;
	BC546A	see Figs 2, 3 and 4	110	180	220
	BC546B; BC547B		200	290	450
	BC547C		420	520	800
	BC547		110	−	800
	BC546		110	−	450
VCEsat	collector-emitter saturation	IC = 10 mA; IB = 0.5 mA	−	90	250	mV
	voltage	IC = 100 mA; IB = 5 mA	−	200	600	mV
VBEsat	base-emitter saturation voltage	IC = 10 mA; IB = 0.5 mA; note 1	−	700	−	mV
		IC = 100 mA; IB = 5 mA; note 1	−	900	−	mV
VBE	base-emitter voltage	IC = 2 mA; VCE = 5 V; note 2	580	660	700	mV
		IC = 10 mA; VCE = 5 V	−	−	770	mV
Cc	collector capacitance	IE = ie = 0; VCB = 10 V; f = 1 MHz	−	1.5	−	pF
Ce	emitter capacitance	IC = ic = 0; VEB = 0.5 V; f = 1 MHz	−	11	−	pF
fT	transition frequency	IC = 10mA; VCE = 5 V; f = 100 MHz	100	−	−	MHz
F	noise figure	IC = 200 μA; VCE = 5 V;	−	2	10	dB
		RS = 2 kΩ; f = 1 kHz; B = 200 Hz

Notes

1.VBEsat decreases by about 1.7 mV/K with increasing temperature.

2.VBE decreases by about 2 mV/K with increasing temperature.

1999 Apr 15

3