Philips BC857BW, BC857W, BC857CW, BC857AW, BC856W Datasheet

DATA SH EET

Product specification

Supersedes data of 1997 Apr 07

1999 Apr 12

DISCRETE SEMICONDUCTORS

BC856W; BC857W

PNP general purpose transistors

andbook, halfpage

M3D187

1999 Apr 12 2

Philips Semiconductors Product specification

PNP general purpose transistors BC856W; BC857W

FEATURES

• Low current (max. 100 mA)

• Low voltage (max. 80)

• S-mini package.

APPLICATIONS

• General purpose switching and amplification.

DESCRIPTION

PNP transistor in a plastic SOT323 package.

NPN complements: BC846W and BC847W.

MARKING

Note

1. ∗ = - : Made in Hong Kong.

∗ = t : Made in Malaysia.

TYPE

NUMBER

MARKING

CODE

(1)

TYPE

NUMBER

MARKING

CODE

(1)

BC856W 3D∗ BC857AW 3E∗

BC856AW 3A∗ BC857BW 3F∗

BC856BW 3B∗ BC857CW 3G∗

BC857W 3H∗

PINNING

PIN DESCRIPTION

1 base

2 emitter

3 collector

Fig.1 Simplified outline (SOT323) and symbol.

handbook, halfpage

MAM048

Top view

2

1

3

2

3

1

1999 Apr 12 3

Philips Semiconductors Product specification

PNP general purpose transistors BC856W; BC857W

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

collector-base voltage open emitter

BC856W −−80 V

BC857W −−50 V

V

CEO

collector-emitter voltage open base

BC856W −−65 V

BC857W −−45 V

V

EBO

emitter-base voltage open collector −−5V

I

C

collector current (DC) −−100 mA

I

CM

peak collector current −−200 mA

I

BM

peak base current −−200 mA

P

tot

total power dissipation T

amb

≤ 25 °C; note 1 − 200 mW

T

stg

storage temperature −65 +150 °C

T

j

junction temperature − 150 °C

T

amb

operating ambient temperature −65 +150 °C

1999 Apr 12 4

Philips Semiconductors Product specification

PNP general purpose transistors BC856W; BC857W

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

T

amb

=25°C unless otherwise specified.

Note

1. Pulse test: t

p

≤ 300 µs; δ≤0.02.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

thermal resistance from junction to ambient note 1 625 K/W

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

I

CBO

collector cut-off current I

E

= 0; V

CB

= −30 V −−15 nA

I

E

= 0; V

CB

= −30 V; T

j

= 150 °C −−4µA

I

EBO

emitter cut-off current I

C

= 0; V

EB

= −5V −−100 nA

h

FE

DC current gain I

C

= −2 mA; V

CE

= −5V;

see Figs 2, 3 and 4

BC856W 125 475

BC857W 125 800

BC856AW; BC857AW 125 250

BC856BW; BC857BW 220 475

BC857CW 420 800

V

CEsat

collector-emitter saturation voltage I

C

= −10 mA; I

B

= −0.5 mA −−300 mV

I

C

= −100 mA; I

B

= −5 mA; note 1 −−650 mV

V

BEsat

base-emitter saturation voltage I

C

= −100 mA; I

B

= −5 mA; note 1 −−950 mV

V

BE

base-emitter voltage I

C

= −2 mA; V

CE

= −5V −600 −750 mV

I

C

= −10 mA; V

CE

= −5V −−820 mV

C

c

collector capacitance I

E

=i

e

= 0; V

CB

= −10 V; f = 1 MHz − 5pF

C

e

emitter capacitance I

C

=i

c

=0; V

EB

= −0.5 V; f = 1 MHz − 12 pF

f

T

transition frequency I

C

= −10 mA; V

CE

= −5 V; f = 100 MHz 100 − MHz

F noise figure I

C

= −200 µA; V

CE

= −5 V; R

S

=2kΩ;

f = 1 kHz; B = 200 Hz

− 10 dB