Philips BC808-25W, BC808W, BC808-40W, BC807-25W Datasheet

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D187

BC807W

PNP general purpose transistor

Product specification			1999 May 18
Supersedes data of 1997 Jun 09

Philips Semiconductors	Product specification
PNP general purpose transistor	BC807W

FEATURES

∙High current (max. 500 mA)

∙Low voltage (max. 45 V).

APPLICATIONS

∙ General purpose switching and amplification.

DESCRIPTION

PNP transistor in a SOT323 plastic package. NPN complement: BC817W.

MARKING

TYPE	MARKING	TYPE	MARKING
NUMBER	CODE(1)	NUMBER	CODE(1)
BC807W	5D	BC807-25W	5B
BC807-16W	5A	BC807-40W	5C

Note

1.= - : Made in Hong Kong.= t : Made in Malaysia.

PINNING

PIN	DESCRIPTION
1	base
2	emitter
3	collector

handbook, halfpage		3

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1

2

		1		2
Top view				MAM048

Fig.1 Simplified outline (SOT323) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VCBO	collector-base voltage	open emitter	−	−50	V
VCEO	collector-emitter voltage	open base; IC = −10 mA	−	−45	V
VEBO	emitter-base voltage	open collector	−	−5	V
IC	collector current (DC)		−	−500	mA
ICM	peak collector current		−	−1	A
IBM	peak base current		−	−200	mA
Ptot	total power dissipation	Tamb ≤ 25 °C; note 1	−	200	mW
Tstg	storage temperature		−65	+150	°C
Tj	junction temperature		−	150	°C
Tamb	operating ambient temperature		−65	+150	°C

Note

1. Transistor mounted on an FR4 printed-circuit board.

1999 May 18

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Philips Semiconductors			Product specification
PNP general purpose transistor				BC807W
THERMAL CHARACTERISTICS
SYMBOL	PARAMETER	CONDITIONS	VALUE		UNIT
Rth j-a	thermal resistance from junction to ambient	note 1	625		K/W

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
ICBO	collector cut-off current	IE = 0; VCB = −20 V	−	−100	nA
		IE = 0; VCB = −20 V; Tj = 150 °C	−	−5	μA
IEBO	emitter cut-off current	IC = 0; VEB = −5 V	−	−100	nA
hFE	DC current gain	IC = −100 mA; VCE = −1 V; note 1;
	BC807W	see Figs 2, 3 and 4	100	600
	BC807-16W		100	250
	BC807-25W		160	400
	BC807-40W		250	600
	DC current gain	IC = −500 mA; VCE = −1 V; note 1	40	−
VCEsat	collector-emitter saturation	IC = −500 mA; IB = −50 mA; note 1	−	−700	mV
	voltage
VBE	base-emitter voltage	IC = −500 mA; VCE = −1 V; note 1	−	−1.2	V
Cc	collector capacitance	IE = ie = 0; VCB = −10 V; f = 1 MHz	−	10	pF
fT	transition frequency	IC = −10 mA; VCE = −5 V; f = 100 MHz	80	−	MHz

Note

1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

1999 May 18

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