DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D102
BAS70W series
Schottky barrier (double) diodes
Product specification |
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1999 Mar 26 |
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Supersedes data of 1996 Mar 19 |
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Philips Semiconductors |
Product specification |
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Schottky barrier (double) diodes |
BAS70W series |
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FEATURES
∙Low forward voltage
∙High breakdown voltage
∙Guard ring protected
∙Very small SMD package
∙Low capacitance.
APPLICATIONS
∙Ultra high-speed switching
∙Voltage clamping
∙Protection circuits
∙Blocking diodes.
DESCRIPTION
Planar Schottky barrier diodes. Single diodes (BAS70W) and double diodes with different pinning (BAS70-04W; -05W; -06W) are available.
The diodes are encapsulated in a SOT323 very small plastic SMD package.
MARKING
TYPE NUMBER |
MARKING |
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CODE(1) |
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BAS70W |
73 |
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BAS70-04W |
74 |
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BAS70-05W |
75 |
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BAS70-06W |
76 |
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Note
1.= -: Made in Hong Kong.= t: Made in Malaysia.
PINNING
PIN |
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BAS70 |
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W |
-04W |
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-05W |
-06W |
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1 |
a1 |
a1 |
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a1 |
k1 |
2 |
n.c. |
k2 |
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a2 |
k2 |
3 |
k1 |
k1, a2 |
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k1, k2 |
a1, a2 |
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handbook, 2 columns |
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1 |
2 |
Top view |
MBC870 |
Fig.1 Simplified outline (SOT323) and pin configuration.
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1 |
2 |
n.c.
MLC357
Fig.2 BAS70W single diode configuration (symbol).
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1 
2
MLC358
Fig.3 BAS70-04W diode configuration (symbol).
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1 
2
MLC359
Fig.4 BAS70-05W diode configuration (symbol).
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1 
2
MLC360
Fig.5 BAS70-06W diode configuration (symbol).
1999 Mar 26 |
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Philips Semiconductors |
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Product specification |
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Schottky barrier (double) diodes |
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BAS70W series |
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LIMITING VALUES |
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In accordance with the Absolute Maximum Rating System (IEC 134). |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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Per diode |
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VR |
continuous reverse voltage |
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− |
70 |
V |
IF |
continuous forward current |
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− |
70 |
mA |
IFRM |
repetitive peak forward current |
tp ≤ 1 s; δ ≤ 0.5 |
− |
70 |
mA |
IFSM |
non-repetitive peak forward current |
tp < 10 ms |
− |
100 |
mA |
Tstg |
storage temperature |
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−65 |
+150 |
°C |
Tj |
junction temperature |
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− |
150 |
°C |
Tamb |
operating ambient temperature |
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−65 |
+150 |
°C |
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL |
PARAMETER |
CONDITIONS |
MAX. |
UNIT |
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Per diode |
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VF |
forward voltage |
see Fig.6 |
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IF = 1 mA |
410 |
mV |
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IF = 10 mA |
750 |
mV |
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IF = 15 mA |
1 |
V |
IR |
reverse current |
VR = 50 V; note 1; see Fig.7 |
100 |
nA |
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VR = 70 V; note 1; see Fig.7 |
10 |
μA |
τ |
charge carrier life time (Krakauer method) |
IF = 5 mA |
100 |
ps |
Cd |
diode capacitance |
f = 1 MHz; VR = 0; see Fig.9 |
2 |
pF |
Note
1. Pulse test: tp = 300 μs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT |
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Rth j-a |
thermal resistance from junction to ambient |
note 1 |
625 |
K/W |
Note |
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1. Refer to SOT323 standard mounting conditions.
1999 Mar 26 |
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