DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC337
NPN general purpose transistor
Product specification |
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1999 Apr 15 |
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Supersedes data of 1997 Mar 10 |
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Philips Semiconductors |
Product specification |
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NPN general purpose transistor |
BC337 |
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FEATURES
∙High current (max. 500 mA)
∙Low voltage (max. 45 V).
APPLICATIONS
∙General purpose switching and amplification, e.g. driver and output stages of audio amplifiers.
DESCRIPTION
NPN transistor in a TO-92; SOT54 plastic package. PNP complement: BC327.
LIMITING VALUES
PINNING
PIN |
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DESCRIPTION |
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1 |
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emitter |
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2 |
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base |
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3 |
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collector |
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handbook, halfpage1 |
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2 |
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1 |
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MAM182 |
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Fig.1 |
Simplified outline (TO-92; SOT54) and |
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symbol. |
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In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VCBO |
collector-base voltage |
open emitter |
− |
50 |
V |
VCEO |
collector-emitter voltage |
open base |
− |
45 |
V |
VEBO |
emitter-base voltage |
open collector |
− |
5 |
V |
IC |
collector current (DC) |
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− |
500 |
mA |
ICM |
peak collector current |
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1 |
A |
IBM |
peak base current |
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− |
200 |
mA |
Ptot |
total power dissipation |
Tamb ≤ 25 °C; note 1 |
− |
625 |
mW |
Tstg |
storage temperature |
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−65 |
+150 |
°C |
Tj |
junction temperature |
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− |
150 |
°C |
Tamb |
operating ambient temperature |
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−65 |
+150 |
°C |
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 15 |
2 |
Philips Semiconductors |
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Product specification |
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NPN general purpose transistor |
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BC337 |
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THERMAL CHARACTERISTICS |
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SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
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UNIT |
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Rth j-a |
thermal resistance from junction to ambient |
note 1 |
0.2 |
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K/mW |
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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ICBO |
collector cut-off current |
IE = 0; VCB = 20 V |
− |
− |
100 |
nA |
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IE = 0; VCB = 20 V; Tj = 150 °C |
− |
− |
5 |
μA |
IEBO |
emitter cut-off current |
IC = 0; VEB = 5 V |
− |
− |
100 |
nA |
hFE |
DC current gain |
IC = 100 mA; VCE = 1 V; |
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BC337 |
see Figs 2, 3 and 4 |
100 |
− |
600 |
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BC337-16 |
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100 |
− |
250 |
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BC337-25 |
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160 |
− |
400 |
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BC337-40 |
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250 |
− |
600 |
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DC current gain |
IC = 500 mA; VCE = 1 V; |
40 |
− |
− |
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see Figs 2, 3 and 4 |
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VCEsat |
collector-emitter saturation |
IC = 500 mA; IB = 50 mA |
− |
− |
700 |
mV |
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voltage |
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VBE |
base-emitter voltage |
IC = 500 mA; VCE = 1 V; note 1 |
− |
− |
1.2 |
V |
Cc |
collector capacitance |
IE = ie = 0; VCB = 10 V; f = 1 MHz |
− |
5 |
− |
pF |
fT |
transition frequency |
IC = 10 mA; VCE = 5 V; f = 100 MHz |
100 |
− |
− |
MHz |
Note
1. VBE decreases by about 2 mV/K with increasing temperature.
1999 Apr 15 |
3 |
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