DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC636; BC638; BC640
PNP medium power transistors
Product specification |
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1999 Apr 23 |
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Supersedes data of 1997 Mar 07 |
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Philips Semiconductors |
Product specification |
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PNP medium power transistors |
BC636; BC638; BC640 |
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FEATURES
∙High current (max. 1 A)
∙Low voltage (max. 80 V).
APPLICATIONS
∙ Audio and video amplifiers.
DESCRIPTION
PNP medium power transistor in a TO-92; SOT54 plastic package. NP complements: BC635, BC637 and BC639.
LIMITING VALUES
PINNING
PIN |
DESCRIPTION |
1 |
base |
2 |
collector |
3 |
emitter |
handbook, halfpage1 |
2 |
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2 |
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3 |
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1 |
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3 |
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MAM285 |
Fig.1 Simplified outline (TO-92; SOT54) and symbol.
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VCBO |
collector-base voltage |
open emitter |
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BC636 |
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− |
−45 |
V |
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BC638 |
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− |
−60 |
V |
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BC640 |
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− |
−100 |
V |
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VCEO |
collector-emitter voltage |
open base |
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BC636 |
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− |
−45 |
V |
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BC638 |
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− |
−60 |
V |
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BC640 |
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− |
−80 |
V |
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VEBO |
emitter-base voltage |
open collector |
− |
−5 |
V |
IC |
collector current (DC) |
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− |
−1 |
A |
ICM |
peak collector current |
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− |
−1.5 |
A |
IBM |
peak base current |
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− |
−200 |
mA |
Ptot |
total power dissipation |
Tamb ≤ 25 °C; note 1 |
− |
0.83 |
W |
Tstg |
storage temperature |
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−65 |
+150 |
°C |
Tj |
junction temperature |
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− |
150 |
°C |
Tamb |
operating ambient temperature |
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−65 |
+150 |
°C |
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 23 |
2 |
Philips Semiconductors |
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Product specification |
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|
PNP medium power transistors |
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BC636; BC638; BC640 |
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THERMAL CHARACTERISTICS |
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SYMBOL |
PARAMETER |
CONDITIONS |
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VALUE |
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UNIT |
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Rth j-a |
thermal resistance from junction to ambient |
note 1 |
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150 |
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K/W |
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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ICBO |
collector cut-off current |
IE = 0; VCB = -30 V |
- |
-100 |
nA |
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IE = 0; VCB = -30 V; Tj = 150 °C |
- |
-10 |
mA |
IEBO |
emitter cut-off current |
IC = 0; VEB = -5 V |
- |
-100 |
nA |
hFE |
DC current gain |
VCE = -2 V; see Fig.2 |
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IC = -5 mA |
40 |
- |
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IC = -150 mA |
63 |
250 |
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IC = -500 mA |
25 |
- |
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DC current gain |
IC = -150 mA; VCE = -2 V; see Fig.2 |
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BC636-10 |
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63 |
160 |
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BC636-16; BC638-16; BC640-16 |
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100 |
250 |
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VCEsat |
collector-emitter saturation voltage |
IC = -500 mA; IB = -50 mA |
- |
-0.5 |
V |
VBE |
base-emitter voltage |
IC = -500 mA; VCE = -2 V |
- |
-1 |
V |
fT |
transition frequency |
IC = -50 mA; VCE = -5 V; f = 100 MHz |
100 |
- |
MHz |
hFE1 |
DC current gain ratio of the |
ïICï = 150 mA; ïVCEï = 2 V |
- |
1.6 |
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----------- |
complementary pairs |
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hFE2 |
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1999 Apr 23 |
3 |
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