Philips BAS40-04, BAS40-06, BAS40, BAS40-07 Datasheet

DISCRETE SEMICONDUCTORS

DATA SHEET

age

M3D088

M3D071

BAS40 series

Schottky barrier (double) diodes

Product specification			1999 Apr 28
Supersedes data of 1997 Oct 24

Philips Semiconductors	Product specification
Schottky barrier (double) diodes	BAS40 series

FEATURES

∙Low forward voltage

∙Guard ring protected

∙Small plastic SMD package

∙Low diode capacitance.

APPLICATIONS

∙Ultra high-speed switching

∙Voltage clamping

∙Protection circuits

∙Blocking diodes.

DESCRIPTION

Planar Schottky barrier diodes with an integrated guard ring for stress protection. Single diodes and double diodes with different pinning are available. The diodes BAS40, BAS40-04, BAS40-05 and BAS40-06 are encapsulated in a SOT23 small plastic SMD package. The BAS40-07 is encapsulated in a SOT143B small plastic SMD package

MARKING

	TYPE NUMBER	MARKING
		CODE (1)
	BAS40	43
	BAS40-04	44
	BAS40-05	45
	BAS40-06	46
	BAS40-07	47p

Note

1.= p: Made in Hong Kong.= t: Made in Malaysia.

PINNING SOT143B (see Fig.2)

PIN	DESCRIPTION
BAS40-07
1	k1
2	k2
3	a2
4	a1

PINNING SOT23 (see Fig.1a)

			DESCRIPTION
	PIN
		BAS40	BAS40-04	BAS40-05	BAS40-06
		(see Fig.1b)	(see Fig.1c)	(see Fig.1d)	(see Fig.1e)
	1	a1	a1	a1	k1
	2	n.c.	k2	a2	k2
	3	k1	k1, a2	k1, k2	a1, a2

								3					1		3											2
																							MGC485
			1									2	c. BAS40-04
Top view										MGC482					3
a. Simplified outline SOT23.													1											2
																							MGC484
													d. BAS40-05.
						3									3
1											2		1												2
										n.c.
									MGC483														MGC486
b. BAS40 single diode.													e. BAS40-06.
		Fig.1					Simplified outline (SOT23) and symbols.

handbook, halfpage 4

3

4 3

1 2

1 2

Top view

MAM194

Fig.2 Simplified outline (SOT143B) BAS40-07 and symbol.

1999 Apr 28

2

Philips Semiconductors				Product specification
Schottky barrier (double) diodes			BAS40 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL	PARAMETER	CONDITIONS	MIN.		MAX.	UNIT
Per diode
VR	continuous reverse voltage		−		40	V
IF	continuous forward current		−		120	mA
IFRM	repetitive peak forward current	tp ≤ 1 s; δ ≤ 0.5	−		120	mA
IFSM	non-repetitive peak forward current	tp < 10 ms	−		200	mA
Tstg	storage temperature		−65		+150	°C
Tj	junction temperature		−		150	°C
Tamb	operating ambient temperature		−65		+150	°C

ELECTRICAL CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL	PARAMETER	CONDITIONS	MAX.	UNIT
Per diode
VF	forward voltage	see Fig.3
		IF = 1 mA	380	mV
		IF = 10 mA	500	mV
		IF = 40 mA	1	V
IR	reverse current	VR = 30 V; note 1; see Fig.4	1	μA
		VR = 40 V; note 1; see Fig.4	10	μA
Cd	diode capacitance	f = 1 MHz; VR = 0 ; see Fig.6	5	pF

Note

1. Pulse test: tp = 300 μs; δ = 0.02.

THERMAL CHARACTERISTICS

SYMBOL	PARAMETER	CONDITIONS	VALUE	UNIT
Rth j-a	thermal resistance from junction to ambient	note 1	500	K/W
Note

1. Refer to SOT23 or SOT143B standard mounting conditions.

1999 Apr 28

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