Philips BCV62C, BCV62B, BCV62A, BCV62 Datasheet

DISCRETE SEMICONDUCTORS

DATA SHEET

M3D071

BCV62

PNP general purpose double transistor

Product specification			1999 Apr 08
Supersedes data of 1997 Jun 18

Philips Semiconductors	Product specification
PNP general purpose double transistor	BCV62

FEATURES

∙Low current (max. 100 mA)

∙Low voltage (max. 30 V)

∙Matched pair.

APPLICATIONS

∙For use in applications where the working point must be independent of temperature

∙Current mirrors.

DESCRIPTION

PNP double transistor in a SOT143B plastic package. NPN complement: BCV61.

MARKING

TYPE	MARKING	TYPE	MARKING
NUMBER	CODE	NUMBER	CODE
BCV62	3Mp	BCV62B	3Kp
BCV62A	3Jp	BCV62C	3Lp

LIMITING VALUES

PINNING

PIN	DESCRIPTION
1	collector TR2; base TR1 and TR2
2	collector TR1
3	emitter TR1
4	emitter TR2

			3
handbook,	halfpage
	4				2	1

TR1 TR2

		1	2		3	4
Top view					MAM292

Fig.1 Simplified outline (SOT143B) and symbol.

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VCBO	collector-base voltage TR1	open emitter	−	−30	V
VCEO	collector-emitter voltage TR1	open base	−	−30	V
VEBS	emitter-base voltage	VCE = 0	−	−6	V
IC	collector current (DC)		−	−100	mA
ICM	peak collector current		−	−200	mA
IBM	peak base current TR1		−	−200	mA
Ptot	total power dissipation	Tamb ≤ 25 °C; note 1	−	250	mW
Tstg	storage temperature		−65	+150	°C
Tj	junction temperature		−	150	°C
Tamb	operating ambient temperature		−65	+150	°C

Note

1. Device mounted on an FR4 printed-circuit board.

1999 Apr 08

2

Philips Semiconductors			Product specification
PNP general purpose double transistor				BCV62
THERMAL CHARACTERISTICS
SYMBOL	PARAMETER	CONDITIONS	VALUE	UNIT
Rth j-a	thermal resistance from junction to ambient	note 1	500	K/W

Note

1. Device mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
Transistor TR1
ICBO	collector cut-off current	IE = 0; VCB = −30 V	−	−	−15	nA
		IE = 0; VCB = −30 V; Tj = 150 °C	−	−	−5	μA
IEBO	emitter cut-off current	IC = 0; VEB = −5 V	−	−	−100	nA
hFE	DC current gain	IC = −100 μA; VCE = −5 V	100	−	−
		IC = −2 mA; VCE = −5 V	100	−	800
VCEsat	collector-emitter saturation	IC = −10 mA; IB = −0.5 mA	−	−75	−300	mV
	voltage	IC = −100 mA; IB = −5 mA	−	−250	−650	mV
VBEsat	base-emitter saturation	IC = −10 mA; IB =− 0.5 mA; note 1	−	−700	−	mV
	voltage	IC = −100 mA; IB = −5 mA; note 1	−	−850	−	mV
VBE	base-emitter voltage	IC = −2 mA; VCE = −5 V; note 1	−600	−650	−750	mV
		IC = −10 mA; VCE = −5 V; note 2	−	−	−820	mV
Cc	collector capacitance	IE = ie = 0; VCB = −10 V	−	4.5	−	pF
fT	transition frequency	IC = −10 mA; VCE = −5 V; f = 100 MHz	100	−	−	MHz
F	noise figure	IC = −200 μA; VCE = −5 V; RS = 2 kΩ;	−	−	10	dB
		f = 1 kHz; B = 200 Hz
Transistor TR2
VEBS	base-emitter forward voltage	IE = 250 mA; VCB = 0	−	−	1.5	V
		IE = 10 μA; VCB = 0	400	−	−	mV
hFE	DC current gain	IC = −2 mA; VCE = −5 V
	BCV62A		125	−	250
	BCV62B		220	−	475
	BCV62C		420	−	800

1999 Apr 08

3