Philips BAV103, BAV100, BAV102, BAV101 Datasheet

DISCRETE SEMICONDUCTORS

DATA SHEET

1/3 page (Datasheet)

M3D054

BAV100 to BAV103

General purpose diodes

Product specification			1996 Sep 17
Supersedes data of April 1996

Philips Semiconductors	Product specification
General purpose diodes	BAV100 to BAV103

FEATURES

∙Small hermetically sealed glass SMD package

∙Switching speed: max. 50 ns

∙General application

∙Continuous reverse voltage:

max. 50 V, 100 V, 150 V and 200 V respectively

∙Repetitive peak reverse voltage: max. 60 V, 120 V, 200 V and 250 V respectively

∙Repetitive peak forward current: max. 625 mA.

APPLICATIONS

∙Switching in industrial equipment e.g. oscilloscopes, digital voltmeters and video output stages in colour television.

DESCRIPTION

The BAV100 to BAV103 are switching diodes fabricated in planar technology, and encapsulated in small hermetically sealed glass SOD80C SMD packages.

handbook, 4 columns

k

a

MAM061

Cathode indicated by green band.

Fig.1 Simplified outline (SOD80C) and symbol.

1996 Sep 17

2

Philips Semiconductors				Product specification
General purpose diodes			BAV100 to BAV103
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VRRM	repetitive peak reverse voltage
	BAV100		−	60	V
	BAV101		−	120	V
	BAV102		−	200	V
	BAV103		−	250	V
VR	continuous reverse voltage
	BAV100		−	50	V
	BAV101		−	100	V
	BAV102		−	150	V
	BAV103		−	200	V
IF	continuous forward current	see Fig.2; note 1	−	250	mA
IFRM	repetitive peak forward current		−	625	mA
IFSM	non-repetitive peak forward current	square wave; Tj = 25 °C prior to
		surge; see Fig.4
		t = 1 μs	−	9	A
		t = 100 μs	−	3	A
		t = 1 s	−	1	A
Ptot	total power dissipation	Tamb = 25 °C; note 1	−	400	mW
Tstg	storage temperature		−65	+175	°C
Tj	junction temperature		−	175	°C

Note

1. Device mounted on an FR4 printed-circuit board.

1996 Sep 17

3