Philips BC109, BC108, BC107 Datasheet

DISCRETE SEMICONDUCTORS

DATA SHEET

M3D125

BC107; BC108; BC109

NPN general purpose transistors

Product specification

1997 Sep 03

Supersedes data of 1997 Jun 03

File under Discrete Semiconductors, SC04

Philips Semiconductors	Product specification
NPN general purpose transistors	BC107; BC108; BC109

FEATURES

∙Low current (max. 100 mA)

∙Low voltage (max. 45 V).

APPLICATIONS

∙ General purpose switching and amplification.

DESCRIPTION

NPN transistor in a TO-18; SOT18 metal package. PNP complement: BC177.

QUICK REFERENCE DATA

PINNING

PIN	DESCRIPTION
1	emitter
2	base
3	collector, connected to the case
handbook, halfpage		3
1
2
	2
3	MAM264	1
Fig.1	Simplified outline (TO-18; SOT18)
	and symbol.

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VCBO	collector-base voltage	open emitter
	BC107		−	50	V
	BC108; BC109		−	30	V
VCEO	collector-emitter voltage	open base
	BC107		−	45	V
	BC108; BC109		−	20	V
ICM	peak collector current		−	200	mA
Ptot	total power dissipation	Tamb ≤ 25 °C	−	300	mW
hFE	DC current gain	IC = 2 mA; VCE = 5 V
	BC107		110	450
	BC108		110	800
	BC109		200	800
fT	transition frequency	IC = 10 mA; VCE = 5 V; f = 100 MHz	100	−	MHz

1997 Sep 03

2

Philips Semiconductors					Product specification
NPN general purpose transistors			BC107; BC108; BC109
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL	PARAMETER	CONDITIONS		MIN.	MAX.	UNIT
VCBO	collector-base voltage	open emitter
	BC107			−	50	V
	BC108; BC109			−	30	V
VCEO	collector-emitter voltage	open base
	BC107			−	45	V
	BC108; BC109			−	20	V
VEBO	emitter-base voltage	open collector
	BC107			−	6	V
	BC108; BC109			−	5	V
IC	collector current (DC)			−	100	mA
ICM	peak collector current			−	200	mA
IBM	peak base current			−	200	mA
Ptot	total power dissipation	Tamb ≤ 25 °C		−	300	mW
Tstg	storage temperature			−65	+150	°C
Tj	junction temperature			−	175	°C
Tamb	operating ambient temperature			−65	+150	°C

THERMAL CHARACTERISTICS

SYMBOL	PARAMETER	CONDITIONS	VALUE	UNIT
Rth j-a	thermal resistance from junction to ambient	note 1	0.5	K/mW
Rth j-c	thermal resistance from junction to case		0.2	K/mW

Note

1. Transistor mounted on an FR4 printed-circuit board.

1997 Sep 03

3