Philips BC860B, BC859C, BC860C Datasheet

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D088

BC859; BC860

PNP general purpose transistors

Product specification			1999 May 28
Supersedes data of 1998 Jul 16

Philips Semiconductors	Product specification
PNP general purpose transistors	BC859; BC860

FEATURES

∙Low current (max. 100 mA)

∙Low voltage (max. 45 V).

APPLICATIONS

∙ Low noise input stages of audio frequency equipment.

DESCRIPTION

PNP transistor in a SOT23 plastic package. NPN complements: BC849 and BC850.

MARKING

TYPE	MARKING	TYPE	MARKING
NUMBER	CODE(1)	NUMBER	CODE(1)
BC859B	4B	BC860B	4F
BC859C	4C	BC860C	4G

Note

1.= p : Made in Hong Kong.= t : Made in Malaysia.

PINNING

PIN	DESCRIPTION
1	base
2	emitter
3	collector

handbook, halfpage				3
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Top view						MAM256

Fig.1 Simplified outline (SOT23) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VCBO	collector-base voltage	open emitter
	BC859		−	−30	V
	BC860		−	−50	V
VCEO	collector-emitter voltage	open base
	BC859		−	−30	V
	BC860		−	−45	V
VEBO	emitter-base voltage	open collector	−	−5	V
IC	collector current (DC)		−	−100	mA
ICM	peak collector current		−	−200	mA
IBM	peak base current		−	−200	mA
Ptot	total power dissipation	Tamb ≤ 25 °C; note 1	−	250	mW
Tstg	storage temperature		−65	+150	°C
Tj	junction temperature		−	150	°C
Tamb	operating ambient temperature		−65	+150	°C

Note

1. Transistor mounted on an FR4 printed-circuit board.

1999 May 28

2

Philips Semiconductors			Product specification
PNP general purpose transistors			BC859; BC860
THERMAL CHARACTERISTICS
SYMBOL	PARAMETER	CONDITIONS	VALUE	UNIT
Rth j-a	thermal resistance from junction to ambient	note 1	500	K/W

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
ICBO	collector cut-off current	IE = 0; VCB = −30 V	−	−1	−15	nA
		IE = 0; VCB = −30 V; Tj = 150 °C	−	−	−4	μA
IEBO	emitter cut-off current	IC = 0; VEB = −5 V	−	−	−100	nA
hFE	DC current gain	IC = −2 mA; VCE = −5 V;
	BC859B; BC860B	see Figs 2 and 3	220	−	475
	BC859C; BC860C		420	−	800
VCEsat	collector-emitter saturation	IC = −10 mA; IB = −0.5 mA	−	−75	−300	mV
	voltage	IC = −100 mA; IB = −5 mA	−	−250	−650	mV
VBEsat	base-emitter saturation voltage	IC = −10 mA; IB = −0.5 mA; note 1	−	−700	−	mV
		IC = −100 mA; IB = −5 mA; note 1	−	−850	−	mV
VBE	base-emitter voltage	IC = −2 mA; VCE = −5 V; note 2	−600	−650	−750	mV
		IC = −10 mA; VCE = −5 V; note 2	−	−	−820	mV
Cc	collector capacitance	IE = ie = 0; VCB = −10 V; f = 1 MHz	−	4.5	−	pF
Ce	emitter capacitance	IC = ic = 0; VEB = −500 mV; f = 1 MHz	−	10	−	pF
fT	transition frequency	IC = −10 mA; VCE = −5 V; f = 100 MHz	100	−	−	MHz
F	noise figure	IC = −200 μA; VCE = −5 V; RS = 2 kΩ;
	BC859B; BC860B;	f = 30 Hz to 15 kHz	−	−	4	dB
	BC859C; BC860C
	noise figure	IC = −200 μA; VCE = −5 V; RS = 2 kΩ;
	BC859B; BC860B;	f = 1 kHz; B = 200 Hz	−	−	4	dB
	BC859C; BC860C

Notes

1.VBEsat decreases by about −1.7 mV/K with increasing temperature.

2.VBE decreases by about −2 mV/K with increasing temperature.

1999 May 28

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