Philips BC817-40W, BC817-25W, BC818W, BC818-40W, BC818-25W Datasheet

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D102

BC817W

NPN general purpose transistor

Product specification			1999 Apr 15
Supersedes data of 1997 Mar 05

Philips Semiconductors	Product specification
NPN general purpose transistor	BC817W

FEATURES

∙High current (max. 500 mA)

∙Low voltage (max. 45 V).

APPLICATIONS

∙ General purpose switching and amplification.

DESCRIPTION

NPN transistor in a SOT323 plastic package. PNP complement: BC807W.

MARKING

TYPE	MARKING	TYPE	MARKING
NUMBER	CODE(1)	NUMBER	CODE(1)
BC817W	6D	BC818W	6H
BC817-16W	6A	BC818-16W	6E
BC817-25W	6B	BC818-25W	6F
BC817-40W	6C	BC818-40W	6G

Note

1.= - : Made in Hong Kong.= t : Made in Malaysia.

PINNING

PIN	DESCRIPTION
1	base
2	emitter
3	collector

handbook, halfpage

3

3

1

2

		1		2
Top view				MAM062

Fig.1 Simplified outline (SOT323) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VCBO	collector-base voltage	open emitter	−	50	V
VCEO	collector-emitter voltage	open base; IC = 10 mA	−	45	V
VEBO	emitter-base voltage	open collector	−	5	V
IC	collector current (DC)		−	500	mA
ICM	peak collector current		−	1	A
IBM	peak base current		−	200	mA
Ptot	total power dissipation	Tamb ≤ 25 °C; note 1	−	200	mW
Tstg	storage temperature		−65	+150	°C
Tj	junction temperature		−	150	°C
Tamb	operating ambient temperature		−65	+150	°C

Note

1. Transistor mounted on an FR4 printed-circuit board.

1999 Apr 15

2

Philips Semiconductors			Product specification
NPN general purpose transistor				BC817W
THERMAL CHARACTERISTICS
SYMBOL	PARAMETER	CONDITIONS	VALUE	UNIT
Rth j-a	thermal resistance from junction to ambient	note 1	625	K/W

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
ICBO	collector cut-off current	IE = 0; VCB = 20 V	−	100	nA
		IE = 0; VCB = 20 V; Tj = 150 °C	−	5	μA
IEBO	emitter cut-off current	IC = 0; VEB = 5 V	−	100	nA
hFE	DC current gain	IC = 100 mA; VCE = 1 V; note 1;
	BC817W	see Figs 2, 3 and 4	100	600
	BC817-16W		100	250
	BC817-25W		160	400
	BC817-40W		250	600
	DC current gain	IC = 500 mA; VCE = 1 V; note 1	40	−
VCEsat	collector-emitter saturation	IC = 500 mA; IB = 50 mA; note 1	−	700	mV
	voltage
VBE	base-emitter voltage	IC = 500 mA; VCE = 1 V; note 1	−	1.2	mV
Cc	collector capacitance	IE = ie = 0; VCB = 10 V; f = 1 MHz	−	5	pF
fT	transition frequency	IC = 10 mA; VCE = 5 V; f = 100 MHz	100	−	MHz

Note

1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

1999 Apr 15

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