Philips BCW60D, BCW60C, BCW60B Datasheet

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D088

BCW60 series

NPN general purpose transistors

Product specification			1999 Apr 22
Supersedes data of 1997 Mar 10

Philips Semiconductors	Product specification
NPN general purpose transistors	BCW60 series

FEATURES

∙Low current (max. 100 mA)

∙Low voltage (max. 32 V).

APPLICATIONS

∙ General purpose switching and amplification.

DESCRIPTION

NPN transistor in a SOT23 plastic package. PNP complements: BCW61 series.

MARKING

TYPE NUMBER	MARKING CODE(1)
BCW60B	AB
BCW60C	AC
BCW60D	AD

Note

1.= p : Made in Hong Kong.= t : Made in Malaysia.

PINNING

PIN						DESCRIPTION
1			base
2			emitter
3			collector
handbook, halfpage					3
						3
						1
							2
			1				2
Top view							MAM255

Fig.1 Simplified outline (SOT23) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VCBO	collector-base voltage	open emitter	−	32	V
VCEO	collector-emitter voltage	open base	−	32	V
VEBO	emitter-base voltage	open collector	−	5	V
IC	collector current (DC)		−	100	mA
ICM	peak collector current		−	200	mA
IBM	peak base current		−	200	mA
Ptot	total power dissipation	Tamb ≤ 25 °C	−	250	mW
Tstg	storage temperature		−65	+150	°C
Tj	junction temperature		−	150	°C
Tamb	operating ambient temperature		−65	+150	°C

1999 Apr 22

2

Philips Semiconductors				Product specification
NPN general purpose transistors			BCW60 series
THERMAL CHARACTERISTICS
SYMBOL	PARAMETER	CONDITIONS	VALUE		UNIT
Rth j-a	thermal resistance from junction to ambient	note 1	500		K/W

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
ICBO	collector cut-off current	IE = 0; VCB = 32 V	−	−	20	nA
		IE = 0; VCB = 32 V; Tamb = 150 °C	−	−	20	μA
IEBO	emitter cut-off current	IC = 0; VEB = 4 V	−	−	20	nA
hFE	DC current gain	IC = 10 μA; VCE = 5 V
	BCW60B		20	−	−
	BCW60C		40	−	−
	BCW60D		100	−	−
	DC current gain	IC = 2 mA; VCE = 5 V
	BCW60B		180	−	310
	BCW60C		250	−	460
	BCW60D		380	−	630
	DC current gain	IC = 50 mA; VCE = 1 V
	BCW60B		70	−	−
	BCW60C		90	−	−
	BCW60D		100	−	−
VCEsat	collector-emitter saturation	IC = 10 mA; IB = 0.25 mA	50	−	350	mV
	voltage	IC = 50 mA; IB = 1.25 mA	100	−	550	mV
VBEsat	base-emitter saturation voltage	IC = 10 mA; IB = 0.25 mA	600	−	850	mV
		IC = 50 mA; IB = 1.25 mA	0.7	−	1.05	V
VBE	base-emitter voltage	IC = 10 μA; VCE = 5 V	−	520	−	mV
		IC = 2 mA; VCE = 5 V	550	650	750	mV
		IC = 50 mA; VCE = 1 V	−	780	−	mV
Cc	collector capacitance	IE = ie = 0; VCB = 10 V; f = 1 MHz	−	1.7	−	pF
Ce	emitter capacitance	IC = ic = 0; VEB = 0.5 V; f = 1 MHz	−	11	−	pF
fT	transition frequency	IC = 10 mA; VCE = 5 V;	100	250	−	MHz
		f = 100 MHz; note 1
F	noise figure	IC = 200 μA; VCE = 5 V;	−	2	6	dB
		RS = 2 kΩ; f = 1 kHz; B = 200 Hz
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

1999 Apr 22

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