Philips BT136B-800G, BT136B-800F, BT136B-800, BT136B-600G, BT136B-600F Datasheet

Philips Semiconductors	Product specification
Triacs	BT136B series

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Glass passivated triacs in a plastic

SYMBOL

PARAMETER

MAX.

MAX.

MAX.

UNIT

envelope

suitable

for

surface

BT136B-

500

600

800

mounting, intended for use in

applications

requiring

high

BT136B-

500F

600F

800F

bidirectional

transient

and

blocking

BT136B-

500G

600G

800G

voltage capability and high thermal

VDRM

Repetitive peak off-state

500

600

800

V

cycling

performance.

Typical

voltages

applications

include

motor

control,

IT(RMS)

RMS on-state current

4

4

4

A

industrial

and domestic

lighting,

ITSM

Non-repetitive peak on-state

25

25

25

A

heating and static switching.

current

PINNING - SOT404

PIN CONFIGURATION

SYMBOL

PIN DESCRIPTION

1main terminal 1

2main terminal 2

3gate

mb main terminal 2

	mb
	T2	T1
	2
1	3	G

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS	MIN.		MAX.		UNIT
				-500	-600	-800
V	Repetitive peak off-state		-	5001	6001	800	V
DRM	voltages
		full sine wave; Tmb ≤ 107 ˚C
IT(RMS)	RMS on-state current		-		4		A
ITSM	Non-repetitive peak	full sine wave; Tj = 25 ˚C prior to
	on-state current	surge
		t = 20 ms	-		25		A
		t = 16.7 ms	-		27		A
I2t	I2t for fusing	t = 10 ms	-		3.1		A2s
dIT/dt	Repetitive rate of rise of	ITM = 6 A; IG = 0.2 A;
	on-state current after	dIG/dt = 0.2 A/μs					A/μs
	triggering	T2+ G+	-		50
		T2+ G-	-		50		A/μs
		T2- G-	-		50		A/μs
		T2- G+	-		10		A/μs
IGM	Peak gate current		-		2		A
VGM	Peak gate voltage		-		5		V
PGM	Peak gate power		-		5		W
PG(AV)	Average gate power	over any 20 ms period	-		0.5		W
Tstg	Storage temperature		-40		150		˚C
Tj	Operating junction		-		125		˚C
	temperature

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 3 A/μs.

October 1997

1

Rev 1.100

Philips Semiconductors	Product specification
Triacs	BT136B series

THERMAL RESISTANCES

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
Rth j-mb	Thermal resistance	full cycle	-	-	3.0	K/W
	junction to mounting base	half cycle	-	-	3.7	K/W
Rth j-a	Thermal resistance	minimum footprint, FR4 board	-	55	-	K/W
	junction to ambient

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.		MAX.		UNIT
		BT136B-			...	...F	...G
IGT	Gate trigger current	VD = 12 V; IT = 0.1 A	-	5	35	25	50	mA
		T2+ G+
		T2+ G-	-	8	35	25	50	mA
		T2- G-	-	11	35	25	50	mA
		T2- G+	-	30	70	70	100	mA
IL	Latching current	VD = 12 V; IGT = 0.1 A	-	7	20	20	30	mA
		T2+ G+
		T2+ G-	-	16	30	30	45	mA
		T2- G-	-	5	20	20	30	mA
		T2- G+	-	7	30	30	45	mA
IH	Holding current	VD = 12 V; IGT = 0.1 A	-	5	15	15	30	mA
VT	On-state voltage	IT = 5 A	-	1.4		1.70		V
VGT	Gate trigger voltage	VD = 12 V; IT = 0.1 A	-	0.7		1.5		V
		VD = 400 V; IT = 0.1 A;	0.25	0.4		-		V
ID		Tj = 125 ˚C
	Off-state leakage current	VD = VDRM(max);	-	0.1		0.5		mA
		Tj = 125 ˚C

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL	PARAMETER	CONDITIONS		MIN.		TYP.	MAX.	UNIT
		BT136B-	...	...F	...G			V/μs
dVD/dt	Critical rate of rise of	VDM = 67% VDRM(max);	100	50	200	250	-
	off-state voltage	Tj = 125 ˚C; exponential
		waveform; gate open
		circuit						V/μs
dVcom/dt	Critical rate of change of	VDM = 400 V; Tj = 95 ˚C;	-	-	10	50	-
	commutating voltage	IT(RMS) = 4 A;
		dIcom/dt = 1.8 A/ms; gate
		open circuit						μs
tgt	Gate controlled turn-on	ITM = 6 A; VD = VDRM(max);	-	-	-	2	-
	time	IG = 0.1 A; dIG/dt = 5 A/μs

October 1997

2

Rev 1.100