Philips BC639-16, BC639, BC637-16, BC635-16, BC635-10 Datasheet

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D186

BC635; BC637; BC639

NPN medium power transistors

Product specification			1999 Apr 23
Supersedes data of 1997 Mar 12

Philips Semiconductors	Product specification
NPN medium power transistors	BC635; BC637; BC639

FEATURES

∙High current (max. 1 A)

∙Low voltage (max. 80 V).

APPLICATIONS

∙ Driver stages of audio/video amplifiers.

DESCRIPTION

NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC636, BC638 and BC640.

LIMITING VALUES

PINNING

PIN	DESCRIPTION
1	base
2	collector
3	emitter

handbook, halfpage1

2

2 3

1

3

MAM259

Fig.1 Simplified outline (TO-92; SOT54) and symbol.

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VCBO	collector-base voltage	open emitter
	BC635		−	45	V
	BC637		−	60	V
	BC639		−	100	V
VCEO	collector-emitter voltage	open base
	BC635		−	45	V
	BC637		−	60	V
	BC639		−	80	V
VEBO	emitter-base voltage	open collector	−	5	V
IC	collector current (DC)		−	1	A
ICM	peak collector current		−	1.5	A
IBM	peak base current		−	200	mA
Ptot	total power dissipation	Tamb ≤ 25 °C	−	0.83	W
Tstg	storage temperature		−65	+150	°C
Tj	junction temperature		−	150	°C
Tamb	operating ambient temperature		−65	+150	°C

1999 Apr 23

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Philips Semiconductors			Product specification
NPN medium power transistors		BC635; BC637; BC639
THERMAL CHARACTERISTICS
SYMBOL	PARAMETER	CONDITIONS	VALUE	UNIT
Rth j-a	thermal resistance from junction to ambient	note 1	150	K/W

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
ICBO	collector cut-off current	IE = 0; VCB = 30 V	-	100	nA
		IE = 0; VCB = 30 V; Tj = 150 °C	-	10	mA
IEBO	emitter cut-off current	IC = 0; VEB = 5 V	-	100	nA
hFE	DC current gain	VCE = 2 V; see Fig.2
		IC = 5 mA	40	-
		IC = 150 mA	63	250
		IC = 500 mA	25	-
	DC current gain	IC = 150 mA; VCE = 2 V; see Fig.2
	BC639-10		63	160
	BC635-16; BC637-16; BC639-16		100	250
VCEsat	collector-emitter saturation voltage	IC = 500 mA; IB = 50 mA	-	500	mV
VBE	base-emitter voltage	IC = 500 mA; VCE = 2 V	-	1	V
fT	transition frequency	IC = 50 mA; VCE = 5 V; f = 100 MHz	100	-	MHz
hFE1	DC current gain ratio of the	ïICï = 150 mA; ïVCEï = 2 V	-	1.6
-----------	complementary pairs
hFE2

1999 Apr 23

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