BDV65BÉ(NPN),
BDV64BÉ(PNP)
Complementary Silicon
Plastic Power Darlingtons
. . . for use as output devices in complementary general purpose amplifier applications.
•High DC Current Gain − HFE = 1000 (min.) @ 5 Adc
•Monolithic Construction with Built−in Base Emitter Shunt Resistors
•Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating |
Symbol |
Max |
Unit |
|
|
|
|
Collector−Emitter Voltage |
VCEO |
100 |
Vdc |
Collector−Base Voltage |
VCB |
100 |
Vdc |
Emitter−Base Voltage |
VEB |
5.0 |
Vdc |
Collector Current − Continuous |
IC |
10 |
Adc |
− Peak |
|
20 |
|
|
|
|
|
Base Current |
IB |
0.5 |
Adc |
Total Device Dissipation @ TC = 25_C |
PD |
125 |
W |
Derate above 25_C |
|
1.0 |
W/_C |
Operating and Storage Junction Temperature |
TJ, Tstg |
–Ê65 to |
_C |
Range |
|
+Ê150 |
|
|
|
|
|
THERMAL CHARACTERISTICS |
|
|
|
|
|
|
|
Characteristic |
Symbol |
Max |
Unit |
|
|
|
|
Thermal Resistance, Junction−to−Case |
RqJC |
1.0 |
_C/W |
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60−80−100−120 VOLTS, 125 WATTS
NPN |
PNP |
COLLECTOR 2 |
COLLECTOR 2,4 |
BASE |
BASE |
1 |
1 |
EMITTER 3 |
EMITTER 3 |
BDV65B |
BDV64B |
|
MARKING |
|
DIAGRAM |
|
SOT−93 |
|
AYWW |
|
1 |
(TO−218) |
|
||
BDV6xBG |
||||
CASE 340D |
||||
2 |
|
|
||
|
|
|
||
3 |
|
|
|
|
A |
= Assembly Location |
|
||
Y |
= Year |
|
|
|
WW |
= Work Week |
|
|
|
G |
= Pb−Free Package |
|
|
|
BDV6xB |
= Device Code |
|
|
|
|
x = 4 or 5 |
|
|
|
ORDERING INFORMATION
Device |
Package |
Shipping |
|
|
|
BDV65B |
SOT−93 |
30 Units / Rail |
|
|
|
BDV65BG |
SOT−93 |
30 Units / Rail |
|
(Pb−Free) |
|
BDV64B |
SOT−93 |
30 Units / Rail |
|
|
|
BDV64BG |
SOT−93 |
30 Units / Rail |
|
(Pb−Free) |
|
♥ Semiconductor Components Industries, LLC, 2008 |
1 |
Publication Order Number: |
September, 2008 − Rev. 13 |
|
BDV65B/D |
BDV65B (NPN), BDV64B (PNP)
DERATING FACTOR
1.0
0.8
0.6
0.4
0.2
0
0 |
25 |
50 |
75 |
100 |
125 |
150 |
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
ELECTRICAL CHARACTERISTICS
Characteristic |
Symbol |
Min |
Max |
Unit |
|
|
|
|
|
|
|
|
|
OFF CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
|
|
Collector−Emitter Sustaining Voltage (1) |
VCEO(sus) |
100 |
− |
|
Vdc |
|
(IC = 30 mAdc, IB = 0) |
|
|
|
|
|
|
Collector Cutoff Current |
ICEO |
− |
1.0 |
|
mAdc |
|
(VCE = 50 Vdc, IB = 0) |
|
|
|
|
|
|
Collector Cutoff Current |
ICBO |
− |
0.4 |
|
mAdc |
|
(VCB = 100 Vdc, IE = 0) |
|
|
|
|
|
|
Collector Cutoff Current |
ICBO |
− |
2.0 |
|
mAdc |
|
(VCB = 50 Vdc, IE = 0, TC = 150_C) |
|
|
|
|
|
|
Emitter Cutoff Current |
IEBO |
− |
5.0 |
|
mAdc |
|
(VBE = 5.0 Vdc, IC = 0) |
|
|
|
|
|
|
ON CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
||
DC Current Gain |
hFE |
1000 |
− |
− |
|
|
(IC = 5.0 Adc, VCE = 4.0 Vdc) |
|
|
|
|
|
|
Collector−Emitter Saturation Voltage |
VCE(sat) |
− |
2.0 |
|
Vdc |
|
(IC = 5.0 Adc, IB = 0.02 Adc) |
|
|
|
|
|
|
Base−Emitter Saturation Voltage |
VBE(on) |
− |
2.5 |
|
Vdc |
|
(IC = 5.0 Adc, VCE = 4.0 Vdc) |
|
|
|
|
|
|
http://onsemi.com
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