DISCRETE SEMICONDUCTORS
DATA SHEET
BFG540W
BFG540W/X; BFG540W/XR
NPN 9 GHz wideband transistor
Product specification |
1997 Dec 04 |
Supersedes data of August 1995
File under Discrete Semiconductors, SC14
Philips Semiconductors |
Product specification |
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NPN 9 GHz wideband transistor
BFG540W
BFG540W/X; BFG540W/XR
FEATURES
∙High power gain
∙Low noise figure
∙High transition frequency
∙Gold metallization ensures excellent reliability.
APPLICATIONS
They are intended for applications in the RF front end, in wideband applications in the GHz range such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optic systems.
DESCRIPTION
NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages.
QUICK REFERENCE DATA
MARKING
TYPE NUMBER |
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BFG540W |
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N9 |
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BFG540W/X |
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N7 |
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BFG540W/XR |
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N8 |
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PINNING |
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PIN |
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DESCRIPTION |
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BFG540W (see Fig.1)
1collector
2base
3emitter
4emitter
BFG540W/X (see Fig.1)
1collector
2emitter
3base
4emitter
BFG540W/XR (see Fig.2)
1collector
2emitter
3base
4emitter
page |
4 |
3 |
1 |
2 |
Top view |
MSB014 |
Fig.1 SOT343N.
page |
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4 |
2 |
1 |
Top view |
MSB842 |
Fig.2 SOT343R.
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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VCBO |
collector-base voltage |
open emitter |
− |
− |
20 |
V |
VCES |
collector-emitter voltage |
RBE = 0 |
− |
− |
15 |
V |
IC |
collector current (DC) |
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− |
120 |
mA |
Ptot |
total power dissipation |
up to Ts = 85 °C |
− |
− |
500 |
mW |
hFE |
DC current gain |
IC = 40 mA; VCE = 8 V |
60 |
120 |
250 |
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Cre |
feedback capacitance |
IC = 0; VCB = 8 V; f = 1 MHz |
− |
0.5 |
− |
pF |
fT |
transition frequency |
IC = 40 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 °C |
− |
9 |
− |
GHz |
GUM |
maximum unilateral |
IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C |
− |
16 |
− |
dB |
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power gain |
IC = 40 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 °C |
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10 |
− |
dB |
|s21|2 |
insertion power gain |
IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C |
14 |
15 |
− |
dB |
F |
noise figure |
Γs = Γopt; IC = 10 mA; VCE = 8 V; f = 2 GHz |
− |
2.1 |
− |
dB |
1997 Dec 04 |
2 |
Philips Semiconductors Product specification
NPN 9 GHz wideband transistor |
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BFG540W |
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BFG540W/X; BFG540W/XR |
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LIMITING VALUES |
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In accordance with the Absolute Maximum Rating System (IEC 134). |
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SYMBOL |
PARAMETER |
CONDITIONS |
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MIN. |
MAX. |
UNIT |
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VCBO |
collector-base voltage |
open emitter |
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20 |
V |
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VCES |
collector-emitter voltage |
RBE = 0 |
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15 |
V |
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VEBO |
emitter-base voltage |
open collector |
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2.5 |
V |
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IC |
collector current (DC) |
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− |
120 |
mA |
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Ptot |
total power dissipation |
up to Ts = 85 °C; see Fig.3; note 1 |
− |
500 |
mW |
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Tstg |
storage temperature |
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−65 |
+150 |
°C |
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Tj |
junction temperature |
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− |
175 |
°C |
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THERMAL CHARACTERISTICS |
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SYMBOL |
PARAMETER |
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CONDITIONS |
VALUE |
UNIT |
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Rth j-s |
thermal resistance from junction to soldering point |
up to Ts = 85 °C; note 1 |
180 |
K/W |
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Note to the “Limiting values” and “Thermal characteristics”
1. Ts is the temperature at the soldering point of the collector pin.
600 |
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MBG248 |
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handbook, halfpage |
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Ptot |
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(mW) |
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400 |
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200 |
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0 |
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0 |
50 |
100 |
150 |
200 |
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Ts |
(oC) |
VCE ≤ 10 V. |
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Fig.3 Power derating curve.
1997 Dec 04 |
3 |
Philips Semiconductors Product specification
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NPN 9 GHz wideband transistor |
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BFG540W |
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BFG540W/X; BFG540W/XR |
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CHARACTERISTICS |
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Tj = 25 °C (unless otherwise specified). |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
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TYP. |
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MAX. |
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UNIT |
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V(BR)CBO |
collector-base breakdown |
open emitter; IC = 10 μA ; IE = 0 |
20 |
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− |
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V |
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voltage |
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V(BR)CES |
collector-emitter breakdown |
RBE = 0; IC = 40 μA |
15 |
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− |
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V |
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voltage |
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V(BR)EBO |
emitter-base breakdown |
open collector; IE = 100 μA; IC = 0 |
2.5 |
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− |
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− |
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V |
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voltage |
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ICBO |
collector cut-off current |
open emitter; VCB = 8 V; IE = 0 |
− |
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− |
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50 |
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nA |
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hFE |
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DC current gain |
IC = 40 mA; VCE = 8 V |
60 |
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120 |
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250 |
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fT |
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transition frequency |
IC = 40 mA; VCE = 8 V; f = 1 GHz; |
− |
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9 |
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− |
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GHz |
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Tamb = 25 °C |
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Cc |
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collector capacitance |
IE = ie = 0; VCB = 8 V; f = 1 MHz |
− |
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0.9 |
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− |
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pF |
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Ce |
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emitter capacitance |
IC = ic = 0; VEB = 0.5 V; f = 1 MHz |
− |
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2 |
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− |
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pF |
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Cre |
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feedback capacitance |
IC = 0; VCB = 8 V; f = 1 MHz |
− |
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0.5 |
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− |
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pF |
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GUM |
maximum unilateral power |
IC = 40 mA; VCE = 8 V; f = 900 MHz; |
− |
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16 |
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− |
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dB |
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gain; note 1 |
Tamb = 25 °C |
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IC = 40 mA; VCE = 8 V; f = 2 GHz; |
− |
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10 |
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dB |
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Tamb = 25 °C |
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|s |
21 |
|2 |
insertion power gain |
I = 40 mA; V |
CE |
= 8 V; f = 900 MHz; |
14 |
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15 |
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− |
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dB |
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C |
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Tamb = 25 °C |
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F |
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noise figure |
Γs = Γopt; IC = 10 mA; VCE = 8 V; |
− |
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1.3 |
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1.8 |
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dB |
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f = 900 MHz |
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Γs = Γopt; IC = 40 mA; VCE = 8 V; |
− |
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1.9 |
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2.4 |
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dB |
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f = 900 MHz |
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Γs = Γopt; IC = 10 mA; VCE = 8 V; |
− |
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2.1 |
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− |
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dB |
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f = 2 GHz |
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PL1 |
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output power at 1 dB gain |
IC = 40 mA; VCE = 8 V; f = 900 MHz; |
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21 |
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dBm |
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compression |
RL = 50 Ω; Tamb = 25 °C |
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ITO |
third order intercept point |
note 2 |
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34 |
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dBm |
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Vo |
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output voltage |
note 3 |
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− |
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500 |
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mV |
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d2 |
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second order intermodulation |
note 4 |
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−50 |
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dB |
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distortion |
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Notes |
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s21 |
2 |
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1. |
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GUM is the maximum unilateral power gain, assuming s12 is zero. GUM = 10 log |
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dB. |
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2. |
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IC = 40 mA; VCE = 8 V; RL = 50 Ω; Tamb = 25 °C; |
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( 1 – |
s |
11 |
2) ( 1 – |
s |
22 |
2) |
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a)fp = 900 MHz; fq = 902 MHz; measured at f(2p − q) = 898 MHz and f(2q − p) = 904 MHz.
3.dim = −60 dB (DIN45004B); Vp = Vo; Vq = Vo −6 dB; Vr = Vo −6 dB; RL = 75 Ω; VCE = 8 V; IC = 40 mA;
a)fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz; measured at f(p + q − r) = 793.25 MHz.
4.IC = 40 mA; VCE = 8 V; Vo = 275 mV; RL = 75 Ω; Tamb = 25 °C;
a)fp = 250 MHz; fq = 560 MHz; measured at f(p + q) = 810 MHz.
1997 Dec 04 |
4 |
Philips Semiconductors |
Product specification |
|
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NPN 9 GHz wideband transistor |
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BFG540W |
||||
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BFG540W/X; BFG540W/XR |
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250 |
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MRA749 |
1 |
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MRA750 |
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handbook, halfpage |
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handbook, halfpage |
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hFE |
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Cre |
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(pF) |
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200 |
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0.8 |
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150 |
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0.6 |
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100 |
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0.4 |
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50 |
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0.2 |
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0 |
10−1 |
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102 |
0 |
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10−2 |
1 |
10 |
0 |
4 |
8 |
12 |
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IC (mA) |
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VCB (V) |
VCE = 8 V. |
IC = 0; f = 1 MHz. |
Fig.4 DC current gain as a function of |
Fig.5 Feedback capacitance as a function of |
collector current; typical values. |
collector-base voltage; typical values. |
MLC044
12 handbook, halfpage
f T
(GHz) |
VCE = 8 V |
8
VCE = 4 V
4
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1 |
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102 |
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1 |
10 |
I C (mA) |
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f = 1 GHz; Tamb = 25 °C. |
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Fig.6 |
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Transition frequency as a function of |
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collector current; typical values. |
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1997 Dec 04 |
5 |
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