Philips BT134W-500G, BT134W-500F, BT134W-800G, BT134W-800F, BT134W-800 Datasheet

Philips Semiconductors	Product specification
Triacs	BT134W series

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Glass passivated triacs in a plastic

SYMBOL

PARAMETER

MAX.

MAX.

MAX.

UNIT

envelope

suitable

for

surface

BT134W-

500

600

800

mounting, intended for use in

applications

requiring

high

BT134W-

500F

600F

800F

bidirectional

transient

and

blocking

BT134W-

500G

600G

800G

voltage capability and high thermal

VDRM

Repetitive peak off-state

500

600

800

V

cycling

performance.

Typical

voltages

applications

include

motor

control,

IT(RMS)

RMS on-state current

1

1

1

A

industrial

and domestic

lighting,

ITSM

Non-repetitive peak on-state

10

10

10

A

heating and static switching.

current

PINNING - SOT223					PIN CONFIGURATION		SYMBOL
	PIN		DESCRIPTION	4
1			main terminal 1					T2	T1

2main terminal 2

3gate

tab main terminal 2	1	2	3	G

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS	MIN.		MAX.		UNIT
				-500	-600	-800
V	Repetitive peak off-state		-	5001	6001	800	V
DRM	voltages
		full sine wave; Tsp ≤ 108 ˚C
IT(RMS)	RMS on-state current		-		1		A
ITSM	Non-repetitive peak	full sine wave; Tj = 25 ˚C prior to
	on-state current	surge
		t = 20 ms	-		10		A
		t = 16.7 ms	-		11		A
I2t	I2t for fusing	t = 10 ms	-		0.5		A2s
dIT/dt	Repetitive rate of rise of	ITM = 1.5 A; IG = 0.2 A;
	on-state current after	dIG/dt = 0.2 A/μs					A/μs
	triggering	T2+ G+	-		50
		T2+ G-	-		50		A/μs
		T2- G-	-		50		A/μs
		T2- G+	-		10		A/μs
IGM	Peak gate current		-		2		A
VGM	Peak gate voltage		-		5		V
PGM	Peak gate power		-		5		W
PG(AV)	Average gate power	over any 20 ms period	-		0.5		W
Tstg	Storage temperature		-40		150		˚C
Tj	Operating junction		-		125		˚C
	temperature

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 3 A/μs.

September 1997

1

Rev 1.200

Philips Semiconductors	Product specification
Triacs	BT134W series

THERMAL RESISTANCES

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
Rth j-sp	Thermal resistance	full or half cycle	-	-	15	K/W
	junction to solder point
Rth j-a	Thermal resistance	pcb mounted; minimum footprint	-	156	-	K/W
	junction to ambient	pcb mounted; pad area as in fig:14	-	70	-	K/W

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.		MAX.		UNIT
		BT134W-			...	...F	...G
IGT	Gate trigger current	VD = 12 V; IT = 0.1 A	-	5	35	25	50	mA
		T2+ G+
		T2+ G-	-	8	35	25	50	mA
		T2- G-	-	11	35	25	50	mA
		T2- G+	-	30	70	70	100	mA
IL	Latching current	VD = 12 V; IGT = 0.1 A	-	7	20	20	30	mA
		T2+ G+
		T2+ G-	-	16	30	30	45	mA
		T2- G-	-	5	20	20	30	mA
		T2- G+	-	7	30	30	45	mA
IH	Holding current	VD = 12 V; IGT = 0.1 A	-	5	15	15	30	mA
VT	On-state voltage	IT = 2 A	-	1.2		1.50		V
VGT	Gate trigger voltage	VD = 12 V; IT = 0.1 A	-	0.7		1.5		V
		VD = 400 V; IT = 0.1 A;	0.25	0.4		-		V
ID		Tj = 125 ˚C
	Off-state leakage current	VD = VDRM(max);	-	0.1		0.5		mA
		Tj = 125 ˚C

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL	PARAMETER	CONDITIONS		MIN.		TYP.	MAX.	UNIT
		BT134W-	...	...F	...G			V/μs
dVD/dt	Critical rate of rise of	VDM =67% VDRM(max);	100	50	200	250	-
	off-state voltage	Tj = 125 ˚C; exponential
		waveform; gate open
		circuit						V/μs
dVcom/dt	Critical rate of change of	VDM = 400 V; Tj = 95 ˚C;	-	-	10	50	-
	commutating voltage	IT(RMS) = 1 A;
		dIcom/dt = 1.8 A/ms; gate
		open circuit						μs
tgt	Gate controlled turn-on	ITM = 1.5 A;	-	-	-	2	-
	time	VD = VDRM(max); IG = 0.1 A;
		dIG/dt = 5 A/μs;

September 1997

2

Rev 1.200

Philips Semiconductors	Product specification
Triacs	BT134W series

1.4	Ptot / W			BT134W		Tsp(max) / C 104
1.2								107
							= 180
1			1					110
							120
0.8							90	113
							60
0.6							30	116
0.4								119
0.2								122
0	0	0.2	0.4	0.6	0.8	1		125
								1.2
				IT(RMS) / A

Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where α = conduction angle.

1000	ITSM / A		BT134W
				IT	ITSM
				T	time
100				Tj initial = 25 C max
		dIT/dt limit
		T2- G+ quadrant
10
1		100us	1ms	10ms	100ms
10us
			T / s

Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 20ms.

12	ITSM / A		BT134W
10			IT	ITSM
			T	time
8			Tj initial = 25 C max
6
4
2
0	1	10	100	1000
		Number of cycles at 50Hz

Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz.

1.2	IT(RMS) / A		BT134W
1					108 C
0.8
0.6
0.4
0.2
0		0	50	100	150
-50
			Tsp / C

Fig.4. Maximum permissible rms current IT(RMS) , versus solder point temperature Tsp.

IT(RMS) / A		BT134W
2
1.5
1
0.5
0	0.1	1	10
0.01

surge duration / s

Fig.5. Maximum permissible repetitive rms on-state

current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tsp ≤ 108˚C.

	VGT(Tj)		BT136
1.6	VGT(25 C)
1.4
1.2
1
0.8
0.6
0.4		0	50	100	150
-50
			Tj /	C

Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.

September 1997

3

Rev 1.200