DISCRETE SEMICONDUCTORS
DATA SHEET
age
M3D088
BAT721 series
Schottky barrier (double) diodes
Product specification |
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1999 May 06 |
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Supersedes data of 1998 Jan 21 |
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Philips Semiconductors |
Product specification |
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Schottky barrier (double) diodes |
BAT721 series |
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FEATURES
∙Ultra high switching speed
∙Low forward voltage
∙Guard ring protected
∙Small plastic SMD package.
APPLICATIONS
∙Ultra high-speed switching
∙Voltage clamping
∙Protection circuits.
DESCRIPTION
Planar Schottky barrier diodes encapsulated in a SOT23 small plastic SMD package. Single diodes and double diodes with different pinning are available.
MARKING
TYPE |
MARKING |
NUMBER |
CODE(1) |
BAT721 |
L7 |
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BAT721A |
L8 |
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BAT721C |
L9 |
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BAT721S |
L0 |
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Note
1.= p : Made in Hong Kong.= t : Made in Malaysia.
PINNING
PIN |
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BAT721 |
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A |
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C |
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S |
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1 |
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a |
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k1 |
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a1 |
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a1 |
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2 |
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n.c. |
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k2 |
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a2 |
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k2 |
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3 |
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k |
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a1, a2 |
k1, k2 |
k1, a2 |
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3 |
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Top view |
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MGC421 |
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Fig.1 |
Simplified outline |
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(SOT23) and pin |
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configuration. |
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3 |
1 |
2 |
n.c.
MLC357
Fig.2 BAT721 single diode configuration (symbol).
3
1 
2
MLC360
Fig.3 BAT721A diode configuration (symbol).
3
1 
2
MLC359
Fig.4 BAT721C diode configuration (symbol).
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2
MLC358
Fig.5 BAT721S diode configuration (symbol).
1999 May 06 |
2 |
Philips Semiconductors |
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Product specification |
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Schottky barrier (double) diodes |
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BAT721 series |
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LIMITING VALUES |
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In accordance with the Absolute Maximum Rating System (IEC 134). |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VR |
continuous reverse voltage |
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− |
40 |
V |
IF |
continuous forward current |
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− |
200 |
mA |
IFSM |
non-repetitive peak forward current |
tp = 8.3 ms half sinewave; |
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1 |
A |
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JEDEC method |
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Tstg |
storage temperature |
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−65 |
+150 |
°C |
Tj |
junction temperature |
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125 |
°C |
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VF |
continuous forward voltage |
see Fig.6 |
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IF = 10 mA |
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300 |
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mV |
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IF = 100 mA |
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420 |
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mV |
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IF = 200 mA |
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550 |
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mV |
IR |
continuous reverse current |
VR = 30 V; see Fig.7 |
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15 |
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μA |
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VR = 30 V; Tj = 100 °C; see Fig.7 |
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3 |
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mA |
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Cd |
diode capacitance |
f = 1 MHz; VR = 0; see Fig.8 |
40 |
50 |
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pF |
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Note |
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1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. |
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THERMAL CHARACTERISTICS |
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SYMBOL |
PARAMETER |
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CONDITIONS |
VALUE |
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UNIT |
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Rth j-a |
thermal resistance from junction to ambient |
note 1 |
500 |
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K/W |
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Note
1. Refer to SOT23 standard mounting conditions.
1999 May 06 |
3 |
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