Philips BCP53-10, BCP53, BCP52-16, BCP52-10, BCP51-16 Datasheet

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D087

BCP51; BCP52; BCP53

PNP medium power transistors

Product specification			1999 Apr 08
Supersedes data of 1997 Apr 08

Philips Semiconductors	Product specification
PNP medium power transistors	BCP51; BCP52; BCP53

FEATURES

∙High current (max. 1 A)

∙Low voltage (max. 80 V)

∙Medium power (max. 1.3 W).

APPLICATIONS

∙Audio, telephony and automotive applications

∙Thick and thin-film circuits.

DESCRIPTION

PNP medium power transistor in a SOT223 plastic package. NPN complements: BCP54, BCP55 and BCP56.

PINNING

PIN										DESCRIPTION
1					base
2, 4					collector
3					emitter
handbook, halfpage							4
										2, 4
										1
										3
		1				2				3
Top view										MAM288

Fig.1 Simplified outline (SOT223) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VCBO	collector-base voltage	open emitter
	BCP51		−	−45	V
	BCP52		−	−60	V
	BCP53		−	−100	V
VCEO	collector-emitter voltage	open base
	BCP51		−	−45	V
	BCP52		−	−60	V
	BCP53		−	−80	V
VEBO	emitter-base voltage	open collector	−	−5	V
IC	collector current (DC)		−	−1	A
ICM	peak collector current		−	−1.5	A
IBM	peak base current		−	−0.2	A
Ptot	total power dissipation	Tamb ≤ 25 °C; note 1	−	1.3	W
Tstg	storage temperature		−65	+150	°C
Tj	junction temperature		−	150	°C
Tamb	operating ambient temperature		−65	+150	°C

Note

1.Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”.

1999 Apr 08

2

Philips Semiconductors			Product specification
PNP medium power transistors		BCP51; BCP52; BCP53
THERMAL CHARACTERISTICS
SYMBOL	PARAMETER	CONDITIONS	VALUE	UNIT
Rth j-a	thermal resistance from junction to ambient	note 1	95	K/W
Rth j-s	thermal resistance from junction to soldering point		14	K/W

Note

1.Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”.

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
ICBO	collector cut-off current	IE = 0; VCB = −30 V	−	−	−100	nA
		IE = 0; VCB = −30 V; Tj = 125 °C	−	−	−10	μA
IEBO	emitter cut-off current	IC = 0; VEB = −5 V	−	−	−100	nA
hFE	DC current gain	VCE = −2 V; see Fig.2
		IC = −5 mA	40	−	−
		IC = −150 mA	63	−	250
		IC = −500 mA	25	−	−
hFE	DC current gain	IC = 150 mA; VCE = −2 V; see Fig.2
	BCP53-10		63	−	160
	BCP51-16; BCP52-16; BCP53-16		100	−	250
VCEsat	collector-emitter saturation voltage	IC = −500 mA; IB = −50 mA	−	−	−0.5	V
VBE	base-emitter voltage	IC = −500 mA; VCE = −2 V	−	−	−1	V
fT	transition frequency	IC = −10 mA; VCE = −5 V;	−	115	−	MHz
		f = 100 MHz

1999 Apr 08

3