DISCRETE SEMICONDUCTORS
DATA SHEET
lfpage
M3D088
BB804
VHF variable capacitance double diode
Product specification |
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1998 Nov 25 |
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Supersedes data of 1996 May 03 |
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Philips Semiconductors |
Product specification |
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VHF variable capacitance double diode |
BB804 |
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FEATURES
∙Selected capacitance range
∙Small plastic SMD package
∙C8: 26 pF; ratio: 1.7
∙Low series resistance.
APPLICATIONS
∙Electronic tuning in FM radio applications.
DESCRIPTION
The BB804 is a variable capacitance double diode with a common cathode, fabricated in planar technology, and encapsulated in the SOT23 small plastic SMD package.
LIMITING VALUES
MARKING
TYPE NUMBER |
CODE |
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BB804 |
SF5 |
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BB804W |
SF2 |
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PINNING
PIN |
DESCRIPTION |
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1 |
anode (a1) |
2 |
anode (a2) |
3 |
common cathode |
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handbook, halfpage |
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3 |
3
1 
2
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1 |
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2 |
MAM169 |
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Fig.1 Simplified outline (SOT23) and symbol.
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL |
PARAMETER |
MIN. |
MAX. |
UNIT |
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Per diode |
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VR |
continuous reverse voltage |
− |
18 |
V |
IF |
continuous forward current |
− |
50 |
mA |
Tstg |
storage temperature |
−55 |
+150 |
°C |
Tj |
operating junction temperature |
−55 |
+125 |
°C |
1998 Nov 25 |
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Philips Semiconductors |
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Product specification |
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VHF variable capacitance double diode |
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BB804 |
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ELECTRICAL CHARACTERISTICS |
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Tj = 25 °C unless otherwise specified. |
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SYMBOL |
PARAMETER |
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CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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Per diode |
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IR |
reverse current |
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VR = 16 V; see Fig.3 |
− |
− |
20 |
nA |
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VR = 16 V; Tj = 60 °C; see Fig.3 |
− |
− |
200 |
nA |
rs |
diode series resistance |
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f = 100 MHz; note 1 |
− |
0.2 |
− |
Ω |
Cd |
diode capacitance |
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VR = 2 V; f = 1 MHz; see Figs 2 and 4 |
42 |
− |
46.5 |
pF |
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VR = 2 V; f = 1 MHz; white 2; see Figs 2 and 4 |
44 |
− |
45.5 |
pF |
Cd ( 2V) |
capacitance ratio |
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f = 1 MHz |
1.65 |
− |
1.75 |
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----------------- |
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Cd ( 8V) |
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Note |
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1. VR is the value at which Cd = 38 pF.
1998 Nov 25 |
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