BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP)
BDX33C and BDX34C are Preferred Devices
Darlington Complementary
Silicon Power Transistors
These devices are designed for general purpose and low speed switching applications.
Features
• High DC Current Gain - hFE = 2500 (typ.) at IC = 4.0
• Collector-Emitter Sustaining Voltage at 100 mAdc
VCEO(sus) = 80 Vdc (min) - BDX33B, BDX334B = 100 Vdc (min) - BDX33C, BDX334C
• Low Collector-Emitter Saturation Voltage
VCE(sat) = 2.5 Vdc (max) at IC = 3.0 Adc
- BDX33B, 33C/34B, 34C
• Monolithic Construction with Build-In Base-Emitter Shunt Resistors
• Pb-Free Packages are Available*
MAXIMUM RATINGS
Rating |
Symbol |
Value |
Unit |
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Collector-Emitter Voltage |
VCEO |
80 |
Vdc |
BDX33B, BDX34B |
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BDX33C, BDX34C |
|
100 |
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Collector-Base Voltage |
VCB |
80 |
Vdc |
BDX33B, BDX34B |
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BDX33C, BDX34C |
|
100 |
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Emitter-Base Voltage |
VEB |
5.0 |
Vdc |
Collector Current - Continuous |
IC |
10 |
Adc |
- Peak |
|
15 |
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Base Current |
IB |
0.25 |
Adc |
Total Device Dissipation @ TC = 25°C |
PD |
70 |
W |
Derate above 25°C |
|
0.56 |
W/°C |
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Operating and Storage Junction |
TJ, Tstg |
-65 to +150 |
°C |
Temperature Range |
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THERMAL CHARACTERISTICS
Characteristics |
Symbol |
Max |
Unit |
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Thermal Resistance, Junction-to-Case |
RqJC |
1.78 |
°C/W |
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
DARLINGTON
10 AMPERE
COMPLEMENTARY SILICON POWER TRANSISTORS 80-100 VOLTS, 65 WATTS
|
TO-220AB |
|
CASE 221A-09 |
1 2 3 |
STYLE 1 |
MARKING DIAGRAM
BDX3xyG
AY WW
BDX3xy = |
Device Code |
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x = 3 or 4 |
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y = B or C |
A |
= |
Assembly Location |
Y= Year
WW = Work Week
G= Pb-Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use and best overall value.
♥ Semiconductor Components Industries, LLC, 2007 |
1 |
Publication Order Number: |
November, 2007 - Rev. 12 |
|
BDX33B/D |
BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) |
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80 |
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(WATTS) |
60 |
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DISSIPATION |
40 |
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, POWER |
20 |
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D |
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P |
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0 |
20 |
40 |
60 |
80 |
100 |
120 |
140 |
160 |
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0 |
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TC, CASE TEMPERATURE (°C) |
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Figure 1. Power Derating
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic |
|
Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector-Emitter Sustaining Voltage (Note 1) |
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VCEO(sus) |
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|
Vdc |
|
(IC = 100 mAdc, IB = 0) |
|
BDX33B/BDX34B |
|
80 |
- |
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BDX33C/BDX34C |
|
100 |
- |
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Collector-Emitter Sustaining Voltage (Note 1) |
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VCER(sus) |
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Vdc |
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(IC = 100 mAdc, IB = 0, RBE = 100) |
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BDX33B/BDX34B |
|
80 |
- |
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BDX33C/BDX33C |
|
100 |
- |
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Collector-Emitter Sustaining Voltage (Note 1) |
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VCEX(sus) |
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Vdc |
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(IC = 100 mAdc, IB = 0, VBE = 1.5 Vdc) |
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BDX33B/BDX34B |
|
80 |
- |
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BDX33C/BDX34C |
|
100 |
- |
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Collector Cutoff Current |
TC = 25°C |
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ICEO |
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mAdc |
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(VCE = 1/2 rated VCEO, IB = 0) |
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- |
0.5 |
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TC = 100°C |
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- |
10 |
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Collector Cutoff Current |
TC = 25°C |
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ICBO |
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mAdc |
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(VCB = rated VCBO, IE = 0) |
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- |
1.0 |
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TC = 100°C |
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- |
5.0 |
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Emitter Cutoff Current |
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IEBO |
- |
10 |
mAdc |
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(VBE = 5.0 Vdc, IC = 0) |
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ON CHARACTERISTICS |
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DC Current Gain (Note 1) |
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hFE |
750 |
- |
- |
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(IC = 3.0 Adc, VCE = 3.0 Vdc) |
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BDX33B, 33C/34B, 34C |
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Collector-Emitter Saturation Voltage |
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|
VCE(sat) |
- |
2.5 |
Vdc |
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(IC = 3.0 Adc, IB = 6.0 mAdc) |
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BDX33B, 33C/34B, 34C |
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Base-Emitter On Voltage |
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VBE(on) |
- |
2.5 |
Vdc |
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(IC = 3.0 Adc, VCE = 3.0 Vdc) |
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BDX33B, 33C/34B, 34C |
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Diode Forward Voltage |
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VF |
- |
4.0 |
Vdc |
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(IC = 8.0 Adc) |
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1.Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
2.Pulse Test non repetitive: Pulse Width = 0.25 seconds.
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