ON Semiconductor 2N6520RLRM, 2N6520RLRA, 2N6520RL1, 2N6520, 2N6519RLRA Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by 2N6515/D

High Voltage Transistors

COLLECTOR

COLLECTOR

3

3

2

2

BASE

BASE

NPN

PNP

1

1

EMITTER

EMITTER

MAXIMUM RATINGS

2N6517

Rating

Symbol

2N6515

2N6519

2N6520

Unit

Collector± Emitter Voltage

VCEO

250

300

350

Vdc

Collector± Base Voltage

VCBO

250

300

350

Vdc

Emitter± Base Voltage

VEBO

Vdc

2N6515, 2N6516, 2N6517

6.0

2N6519, 2N6520

5.0

Base Current

IB

250

mAdc

Collector Current Ð Continuous

IC

500

mAdc

Total Device Dissipation

PD

625

mW

@ TA = 25°C

5.0

mW/°C

Derate above 25°C

Total Device Dissipation

PD

1.5

Watts

@ TC = 25°C

12

mW/°C

Derate above 25°C

Operating and Storage Junction

TJ, Tstg

± 55 to +150

°C

Temperature Range

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RqJA

200

°C/W

Thermal Resistance, Junction to Case

RqJC

83.3

°C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

NPN 2N6515 2N6517 PNP 2N6519 2N6520

Voltage and current are negative for PNP transistors

1

2 3

CASE 29±04, STYLE 1

TO±92 (TO±226AA)

Characteristic	Symbol	Min	Max	Unit

OFF CHARACTERISTICS

Collector± Emitter Breakdown Voltage(1)		V(BR)CEO			Vdc
(IC = 1.0 mAdc, IB = 0)	2N6515		250	Ð
	2N6519		300	Ð
	2N6517, 2N6520		350	Ð
Collector± Base Breakdown Voltage		V(BR)CBO			Vdc
(IC = 100 μAdc, IE = 0 )	2N6515		250	Ð
	2N6519		300	Ð
	2N6517, 2N6520		350	Ð
Emitter± Base Breakdown Voltage		V(BR)EBO			Vdc
(IE = 10 μAdc, IC = 0)	2N6515, 2N6517		6.0	Ð
	2N6519, 2N6520		5.0	Ð

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

REV 1

Motorola Small±Signal Transistors, FETs and Diodes Device Data	1
Motorola, Inc. 1997

NPN 2N6515 2N6517 PNP 2N6519 2N6520

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic		Symbol	Min	Max	Unit
OFF CHARACTERISTICS (Continued)
Collector Cutoff Current		ICBO			nAdc
(VCB = 150 Vdc, IE = 0)	2N6515		Ð	50
(VCB = 200 Vdc, IE = 0)	2N6519		Ð	50
(VCB = 250 Vdc, IE = 0)	2N6517, 2N6520		Ð	50
Emitter Cutoff Current		IEBO			nAdc
(VEB = 5.0 Vdc, IC = 0)	2N6515, 2N6517		Ð	50
(VEB = 4.0 Vdc, IC = 0)	2N6519, 2N6520		Ð	50
ON CHARACTERISTICS(1)
DC Current Gain		hFE			Ð
(IC = 1.0 mAdc, VCE = 10 Vdc)	2N6515		35	Ð
	2N6519		30	Ð
	2N6517, 2N6520		20	Ð
(IC = 10 mAdc, VCE = 10 Vdc)	2N6515		50	Ð
	2N6519		45	Ð
	2N6517, 2N6520		30	Ð
(IC = 30 mAdc, VCE = 10 Vdc)	2N6515		50	300
	2N6519		45	270
	2N6517, 2N6520		30	200
(IC = 50 mAdc, VCE = 10 Vdc)	2N6515		45	220
	2N6519		40	200
	2N6517, 2N6520		20	200
(IC = 100 mAdc, VCE = 10 Vdc)	2N6515		25	Ð
	2N6519		20	Ð
	2N6517, 2N6520		15	Ð
Collector± Emitter Saturation Voltage		VCE(sat)			Vdc
(IC = 10 mAdc, IB = 1.0 mAdc)			Ð	0.30
(IC = 20 mAdc, IB = 2.0 mAdc)			Ð	0.35
(IC = 30 mAdc, IB = 3.0 mAdc)			Ð	0.50
(IC = 50 mAdc, IB = 5.0 mAdc)			Ð	1.0
Base ± Emitter Saturation Voltage		VBE(sat)			Vdc
(IC = 10 mAdc, IB = 1.0 mAdc)			Ð	0.75
(IC = 20 mAdc, IB = 2.0 mAdc)			Ð	0.85
(IC = 30 mAdc, IB = 3.0 mAdc)			Ð	0.90
Base±Emitter On Voltage		VBE(on)	Ð	2.0	Vdc
(IC = 100 mAdc, VCE = 10 Vdc)
SMALL± SIGNAL CHARACTERISTICS
Current± Gain Ð Bandwidth Product (1)		f	40	200	MHz
(IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz)		T
Collector±Base Capacitance		Ccb	Ð	6.0	pF
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
Emitter±Base Capacitance		Ceb			pF
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)	2N6515, 2N6517		Ð	80
	2N6519, 2N6520		Ð	100
SWITCHING CHARACTERISTICS
Turn±On Time		ton	Ð	200	μs
(VCC = 100 Vdc, VBE(off) = 2.0 Vdc, IC = 50 mAdc, IB1 = 10 mAdc)
Turn±Off Time		toff	Ð	3.5	μs
(VCC = 100 Vdc, IC = 50 mAdc, IB1 = IB2 = 10 mAdc)
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

2	Motorola Small±Signal Transistors, FETs and Diodes Device Data

						NPN
					2N6515
	200	VCE = 10 V			TJ = 125°C
GAIN	100					25°C
CURRENT	70
						± 55°C
	50
, DC
FE
h
	30
	20
	1.0	2.0	3.0	5.0	7.0	10	20	30	50	70	100
				IC, COLLECTOR CURRENT (mA)

	NPN	2N6515		2N6517	PNP		2N6519	2N6520
				PNP
				2N6519
	200
	VCE = ±10 V			TJ = 125°C
GAIN	100				25°C
CURRENT	70				± 55°C
	50
, DC
FE
h
	30
	20
	±1.0	± 2.0 ± 3.0	± 5.0 ± 7.0 ±10		± 20	± 30	± 50 ± 70 ±100
		IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

					2N6517
	200	VCE = 10 V			TJ = 125°C
GAIN	100					25°C
	70
CURRENT
	50
						± 55°C
DC	30
,
FE
h	20
	10
	1.0	2.0	3.0	5.0	7.0	10	20	30	50	70	100
			IC, COLLECTOR CURRENT (mA)

				2N6520
	200
	VCE = ±10 V			TJ = 125°C
GAIN	100			25°C
	70
DC CURRENT				± 55°C
	50
	30
,
FE
h	20
	10
	±1.0	± 2.0	± 3.0	± 5.0 ± 7.0 ±10	± 20	± 30	± 50 ± 70±100
			IC, COLLECTOR CURRENT (mA)

Figure 2. DC Current Gain

(MHz)				2N6515, 2N6517
	100
PRODUCT	70
	50
Ð BANDWIDTH
	30						TJ = 25°C
							VCE = 20 V
							f = 20 MHz
,CURRENT±GAIN	20
	10
T	1.0	2.0	3.0	5.0	7.0	10	20	30	50	70	100
f
			IC, COLLECTOR CURRENT (mA)

(MHz)				2N6519, 2N6520
	100
PRODUCT	70
	50
Ð BANDWIDTH
	30				TJ = 25°C
					VCE = ± 20 V
					f = 20 MHz
,CURRENT±GAIN	20
	10
T	±1.0	± 2.0	± 3.0	± 5.0 ± 7.0 ±10	± 20	± 30	± 50 ± 70±100
f
			IC, COLLECTOR CURRENT (mA)

Figure 3. Current±Gain Ð Bandwidth Product

Motorola Small±Signal Transistors, FETs and Diodes Device Data

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