MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BF420/D
High Voltage Transistors
NPN Silicon
COLLECTOR
2
3 BASE
1 EMITTER
MAXIMUM RATINGS
Rating |
Symbol |
BF420 |
|
BF422 |
Unit |
|
|
|
|
|
|
Collector± Emitter Voltage |
VCEO |
300 |
|
250 |
Vdc |
Collector± Base Voltage |
VCBO |
300 |
|
250 |
Vdc |
Emitter± Base Voltage |
VEBO |
|
5.0 |
Vdc |
|
Collector Current Ð Continuous |
IC |
|
500 |
mAdc |
|
Total Device Dissipation @ TA = 25°C |
PD |
|
625 |
mW |
|
Derate above 25°C |
|
|
5.0 |
mW/°C |
|
|
|
|
|
|
|
Total Device Dissipation @ TC = 25°C |
PD |
|
1.5 |
Watts |
|
Derate above 25°C |
|
|
12 |
mW/°C |
|
|
|
|
|
||
Operating and Storage Junction |
TJ, Tstg |
± 55 to +150 |
°C |
||
Temperature Range |
|
|
|
|
|
|
|
|
|
|
|
THERMAL CHARACTERISTICS
Characteristic |
Symbol |
Max |
Unit |
|
|
|
|
Thermal Resistance, Junction to Ambient |
RqJA |
200 |
°C/W |
Thermal Resistance, Junction to Case |
RqJC |
83.3 |
°C/W |
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
BF420
BF422
1
2 3
CASE 29±11, STYLE 14 TO±92 (TO±226AA)
Characteristic |
Symbol |
Min |
Max |
Unit |
|
|
|
|
|
OFF CHARACTERISTICS
Collector± Emitter Breakdown Voltage(1) |
|
V(BR)CEO |
|
|
Vdc |
(IC = 1.0 mAdc, IB = 0) |
BF420 |
|
300 |
Ð |
|
|
BF422 |
|
250 |
Ð |
|
|
|
|
|
|
|
Collector± Base Breakdown Voltage |
|
V(BR)CBO |
300 |
Ð |
Vdc |
(IC = 100 mAdc, IE = 0) |
BF420 |
|
|
||
|
BF422 |
|
250 |
Ð |
|
|
|
|
|
|
|
Emitter± Base Breakdown Voltage |
|
V(BR)EBO |
5.0 |
Ð |
Vdc |
(IE = 100 mAdc, IC = 0) |
BF420 |
|
|
||
|
BF422 |
|
5.0 |
Ð |
|
|
|
|
|
|
|
Collector Cutoff Current |
|
ICBO |
|
|
μAdc |
(VCB = 200 Vdc, IE = 0) |
BF420 |
|
Ð |
0.01 |
|
|
BF422 |
|
Ð |
Ð |
|
|
|
|
|
|
|
Emitter Cutoff Current |
|
IEBO |
|
|
nAdc |
(VEB = 5.0 Vdc, IC = 0) |
BF420 |
|
Ð |
100 |
|
|
BF422 |
|
Ð |
Ð |
|
|
|
|
|
|
|
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
REV 1
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
1 |
Motorola, Inc. 1998 |
|
BF420 |
BF422 |
|
|
|
|
|
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) |
|
|
|
|
||
|
|
|
|
|
|
|
|
Characteristic |
|
Symbol |
Min |
Max |
Unit |
|
|
|
|
|
|
|
ON CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
|
|
DC Current Gain |
|
hFE |
|
|
Ð |
|
(IC = 25 mAdc, VCE = 20 Vdc) |
BF420 |
|
50 |
Ð |
|
|
|
|
BF422 |
|
50 |
Ð |
|
|
|
|
|
|
|
|
Collector± Emitter Saturation Voltage |
|
VCE(sat) |
|
|
Vdc |
|
(IC = 20 mAdc, IB = 2.0 mAdc) |
|
|
Ð |
0.5 |
|
|
Base ± Emitter Saturation Voltage |
|
VBE(sat) |
|
|
Vdc |
|
(IC = 20 mAdc, IB = 2.0 mAdc) |
|
|
Ð |
2.0 |
|
|
SMALL± SIGNAL CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
|
|
CurrentGain Ð Bandwidth Product |
|
fT |
|
|
MHz |
|
(IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz) |
|
|
60 |
Ð |
|
|
Common Emitter Feedback Capacitance |
|
Cre |
|
|
pF |
|
(VCB = 30 Vdc, IE = 0, f = 1.0 MHz) |
|
|
Ð |
1.6 |
|
|
2 |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
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