BDW42
ON Semiconductor BDW42, BDW42G, BDW46, BDW46G, BDW47 Service Manual
...
© Semiconductor Components Industries, LLC, 2007
November, 2007 - Rev. 13
Publication Order Number:
BDW42/D
BDW42 - NPN, BDW46,
BDW47 - PNP
BDW42 and BDW47 are Preferred Devices
Darlington Complementary
Silicon Power Transistors
This series of plastic, medium-power silicon NPN and PNP
Darlington transistors are designed for general purpose and low speed
switching applications.
Features
•High DC Current Gain - h
FE
= 2500 (typ) @ I
C
= 5.0 Adc.
•Collector Emitter Sustaining Voltage @ 30 mAdc:
V
CEO(sus)
= 80 Vdc (min) - BDW46
100 Vdc (min) - BDW42/BDW47
•Low Collector Emitter Saturation Voltage
V
CE(sat)
= 2.0 Vdc (max) @ I
C
= 5.0 Adc
3.0 Vdc (max) @ I
C
= 10.0 Adc
•Monolithic Construction with Built-In Base Emitter Shunt resistors
•TO-220AB Compact Package
•Pb-Free Packages Are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector‐Emitter Voltage
BDW46
BDW42, BDW47
V
CEO
80
100
Vdc
Collector‐Base Voltage
BDW46
BDW42, BDW47
V
CB
80
100
Vdc
Emitter‐Base Voltage V
EB
5.0 Vdc
Collector Current I
C
15 Adc
Base Current I
B
0.5 Adc
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
85
0.68
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
-55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction-to-Case
R
q
JC
1.47 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO-220AB
CASE 221A-09
STYLE 1
MARKING
DIAGRAM
15 AMP DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
80-100 VOLT, 85 WATT
http://onsemi.com
1
2
3
4
Device Package Shipping
ORDERING INFORMATION
BDW42 TO-220AB 50 Units/Rail
BDW46 TO-220AB 50 Units/Rail
BDW47G 50 Units/Rail
BDW47
TO-220AB
(Pb-Free)
50 Units/RailTO-220AB
Preferred devices are ON Semiconductor recommended
choices for future use and best overall value
BDWxx = Device Code
x = 42, 46, or 47
A = Assembly Location
Y = Year
WW = Work Week
G = Pb-Free Package
BDW42G TO-220AB
(Pb-Free)
50 Units/Rail
BDW46G TO-220AB
(Pb-Free)
50 Units/Rail
BDWxx
AYWWG
BDW42 - NPN, BDW46, BDW47 - PNP
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
ÎÎÎ
Min
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Sustaining Voltage (Note 1)
(I
C
= 30 mAdc, I
B
= 0) BDW46
BDW42/BDW47
V
CEO(sus)
ÎÎÎ
ÎÎÎ
80
100
-
-
Vdc
Collector Cutoff Current
(V
CE
= 40 Vdc, I
B
= 0) BDW46
(V
CE
= 50 Vdc, I
B
= 0) BDW42/BDW47
I
CEO
ÎÎÎ
ÎÎÎ
-
-
2.0
2.0
mAdc
Collector Cutoff Current
(V
CB
= 80 Vdc, I
E
= 0) BDW46
(V
CB
= 100 Vdc, I
E
= 0) BDW42/BDW47
I
CBO
ÎÎÎ
ÎÎÎ
-
-
1.0
1.0
mAdc
Emitter Cutoff Current
(V
BE
= 5.0 Vdc, I
C
= 0)
I
EBO
ÎÎÎ
ÎÎÎ
-
2.0
mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(I
C
= 5.0 Adc, V
CE
= 4.0 Vdc)
(I
C
= 10 Adc, V
CE
= 4.0 Vdc)
h
FE
ÎÎÎ
ÎÎÎ
1000
250
-
-
Collector-Emitter Saturation Voltage
(I
C
= 5.0 Adc, I
B
= 10 mAdc)
(I
C
= 10 Adc, I
B
= 50 mAdc)
V
CE(sat)
ÎÎÎ
ÎÎÎ
-
-
2.0
3.0
Vdc
Base-Emitter On Voltage
(I
C
= 10 Adc, V
CE
= 4.0 Vdc)
V
BE(on)
ÎÎÎ
ÎÎÎ
-
3.0
Vdc
SECOND BREAKDOWN (Note 2)
Second Breakdown Collector
Current with Base Forward Biased
BDW42 V
CE
= 28.4 Vdc
V
CE
= 40 Vdc
BDW46/BDW47 V
CE
= 22.5 Vdc
V
CE
= 36 Vdc
I
S/b
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
3.0
1.2
3.8
1.2
-
-
-
-
Adc
DYNAMIC CHARACTERISTICS
Magnitude of common emitter small signal short circuit current transfer ratio
(I
C
= 3.0 Adc, V
CE
= 3.0 Vdc, f = 1.0 MHz)
f
T
ÎÎÎ
4.0
-
MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 0.1 MHz) BDW42
BDW46/BDW47
C
ob
ÎÎÎ
ÎÎÎ
-
-
200
300
pF
Small-Signal Current Gain
(I
C
= 3.0 Adc, V
CE
= 3.0 Vdc, f = 1.0 kHz)
h
fe
ÎÎÎ
ÎÎÎ
300
-
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
2. Pulse Test non repetitive: Pulse Width = 250 ms.
BDW42 - NPN, BDW46, BDW47 - PNP
http://onsemi.com
3
90
60
40
20
0
25 50 75 100 125 150
Figure 1. Power Temperature Derating Curve
T
C
, CASE TEMPERATURE (°C)
P
D
, POWER DISSIPATION (WATTS)
80
70
50
30
10
Figure 2. Switching Times Test Circuit
5.0
0.1
Figure 3. Switching Times
I
C
, COLLECTOR CURRENT (AMP)
t, TIME (s)μ
3.0
0.7
0.5
0.3
0.2
0.05
0.2 0.3 0.7 3.0 10
t
d
@ V
BE(off)
= 0 V
V
CC
= 30 V
I
C
/I
B
= 250
I
B1
= I
B2
T
J
= 25°C
t
f
0.07
1.0 5.0
t
s
t
r
0.1
1.0
2.0
0.5 2.0 7.0
0
V
CC
- 30 V
SCOPE
TUT
+ 4.0 V
t
r
, t
f
v 10 ns
DUTY CYCLE = 1.0%
R
C
D
1
MUST BE FAST RECOVERY TYPES, e.g.:
1N5825 USED ABOVE I
B
[ 100 mA
MSD6100 USED BELOW I
B
[ 100 mA
25 ms
D
1
51
R
B
AND R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
V
2
APPROX
+ 8.0 V
V
1
APPROX
- 12 V
[ 8.0 k [ 150
for t
d
and t
r
, D
1
id disconnected
and V
2
= 0
For NPN test circuit reverse all polarities
R
B
Figure 4. Thermal Response
t, TIME OR PULSE WIDTH (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02
r(t) EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000500
R
q
JC
(t) = r(t) R
q
JC
R
q
JC
= 1.92°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
R
q
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D = 0.5
SINGLE PULSE
0.2
0.05
0.1
0.02
0.01
0.03 0.3 3.0 30 300
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