MCR225-8FP
Semiconductor Components Industries, LLC, 1999
February , 2000 – Rev. 2
1 Publication Order Number:
MCR225FP/D
MCR225-8FP, MCR225-10FP
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supply crowbar circuits.
• Glass Passivated Junctions with Center Gate Fire for Greater Parameter
Uniformity and Stability
• Small, Rugged, Thermowatt Constructed for Low Thermal
Resistance, High Heat Dissipation and Durability
• Blocking Voltage to 800 Volts
• 300 A Surge Current Capability
• Insulated Package Simplifies Mounting
• Indicates UL Registered — File #E69369
• Device Marking: Logo, Device Type, e.g., MCR225–8FP, Date Code
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Off–State V oltage
(1)
(T
J
= –40 to +125°C, Sine Wave,
50 to 60 Hz, Gate Open)
MCR225–8FP
MCR225–10FP
V
DRM,
V
RRM
600
800
Volts
On-State RMS Current (T
C
= +70°C)
(180° Conduction Angles)
I
T(RMS)
25 Amps
Peak Non–repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz,
T
C
= +70°C)
I
TSM
300 Amps
Circuit Fusing (t = 8.3 ms) I
2
t 375 A
2
s
Forward Peak Gate Power
(T
C
= +70°C, Pulse Width
v
1.0 µs)
P
GM
20 Watts
Forward Average Gate Power
(T
C
= +70°C, t = 8.3 ms)
P
G(AV)
0.5 Watt
Forward Peak Gate Current
(T
C
= +70°C, Pulse Width
v
1.0 µs)
I
GM
2.0 Amps
RMS Isolation Voltage (T
A
= 25°C,
Relative Humidity
p
20%)
()
V
(ISO)
1500 Volts
Operating Junction Temperature Range T
J
–40 to
+125
°C
Storage Temperature Range T
stg
–40 to
+150
°C
(1) V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
ISOLATED SCRs
25 AMPERES RMS
600 thru 800 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
Device Package Shipping
ORDERING INFORMATION
MCR225–8FP ISOLATED TO220FP 500/Box
http://onsemi.com
MCR225–10FP ISOLATED TO220FP 500/Box
ISOLATED TO–220 Full Pack
CASE 221C
STYLE 2
1
2
3
PIN ASSIGNMENT
1
2
3
Anode
Gate
Cathode
K
G
A
()
查询MCR225-8FP,供应商
MCR225–8FP, MCR225–10FP
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
θJC
1.5 °C/W
Thermal Resistance, Case to Sink R
θCS
2.2 (typ) °C/W
Thermal Resistance, Junction to Ambient R
θJA
60 °C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds T
L
260 °C
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(V
D
= Rated V
DRM
, V
RRM
; Gate Open) T
J
= 25°C
T
J
= 125°C
I
DRM
,
I
RRM
—
—
—
—
10
2
µA
mA
ON CHARACTERISTICS
Peak Forward On–State Voltage
(1)
(I
TM
= 50 A)
V
TM
— — 1.8 Volts
Gate Trigger Current (Continuous dc)
(V
AK
= 12 Vdc, R
L
= 100 Ohms)
I
GT
— — 40 mA
Gate Trigger Voltage (Continuous dc)
(V
AK
= 12 Vdc, R
L
= 100 Ohms)
V
GT
— 0.8 1.5 Volts
Gate Non-Trigger Voltage
(V
AK
= 12 Vdc, R
L
= 100 Ohms, T
J
= 125°C)
V
GD
0.2 — — Volts
Holding Current
(V
AK
= 12 Vdc, Initiating Current = 200 mA, Gate Open)
I
H
— 20 40 mA
Turn-On Time
(I
TM
= 25 A, I
GT
= 40 mAdc)
t
gt
— 1.5 — µs
Turn-Off Time (V
DRM
= Rated Voltage)
(I
TM
= 25 A, I
R
= 25 A)
(I
TM
= 25 A, I
R
= 25 A, T
J
= 125°C)
t
q
—
—
15
35
—
—
µs
DYNAMIC CHARACTERISTICS
Critical Rate-of-Rise of Off-State Voltage
(Gate Open, V
D
= Rated V
DRM
, Exponential Waveform)
dv/dt — 100 — V/µs
(1) Pulse Test: Pulse Width = 1.0 ms, Duty Cycle ≤ 2%.
MCR225–8FP, MCR225–10FP
http://onsemi.com
3
+ Current
+ Voltage
V
TM
I
DRM
at V
DRM
I
H
Symbol Parameter
V
DRM
Peak Repetitive Off State Forward Voltage
I
DRM
Peak Forward Blocking Current
V
RRM
Peak Repetitive Off State Reverse Voltage
I
RRM
Peak Reverse Blocking Current
V
TM
Peak on State Voltage
I
H
Holding Current
Voltage Current Characteristic of SCR
Anode +
on state
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode –
Forward Blocking Region
I
RRM
at V
RRM
(off state)
20
32
24
16
8
48
201612
1612
84
80
90
100
110
120
130
dc
T
J
= 125°C
0
60°
90°
α = 30°
180°
0
I
T(AV)
, AVERAGE ON-ST ATE FORWARD CURRENT (AMPS)
α = CONDUCTION ANGLE
α
α
α = CONDUCTION ANGLE
I
T(AV)
, ON-STA TE FORW ARD CURRENT (AMPS)
dc90°60°α = 30°
0
P , AVERAGE POWER (WATTS)
(AV)
T
, M
A
X
I
MUM
CA
SE
T
EMPER
AT
URE
(
C)
C
°
180°
TYPICAL CHARACTERISTICS
Figure 1. Average Current Derating
Figure 2. Maximum On–State Power Dissipation
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