ON Semiconductor BC640, BC638ZL1, BC640ZL1, BC636 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by BC636/D

High Current Transistors

PNP Silicon

COLLECTOR 2

3 BASE

1 EMITTER

MAXIMUM RATINGS

		BC	BC	BC
Rating	Symbol	636	638	640	Unit
Collector± Emitter Voltage	VCEO	±45	±60	±80	Vdc
Collector± Base Voltage	VCBO	±45	±60	±80	Vdc
Emitter± Base Voltage	VEBO		±5.0		Vdc
Collector Current Ð Continuous	IC		±0.5		Adc
Total Device Dissipation @ TA = 25°C	PD		625		mW
Derate above 25°C			5.0		mW/°C
Total Device Dissipation @ TC = 25°C	PD		1.5		Watt
Derate above 25°C			12		mW/°C
Operating and Storage Junction	TJ, Tstg	± 55 to +150			°C
Temperature Range

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit
Thermal Resistance, Junction to Ambient	RqJA	200	°C/W
Thermal Resistance, Junction to Case	RqJC	83.3	°C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

BC636

BC638

BC640

1

2 3

CASE 29±04, STYLE 14 TO±92 (TO±226AA)

Characteristic	Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Collector± Emitter Breakdown Voltage*		V(BR)CEO				Vdc
(IC = ±10 mAdc, IB = 0)	BC636		±45	Ð	Ð
	BC638		±60	Ð	Ð
	BC640		±80	Ð	Ð
Collector± Base Breakdown Voltage		V(BR)CBO				Vdc
(IC = ±100 μAdc, IE = 0)	BC636		±45	Ð	Ð
	BC638		±60	Ð	Ð
	BC640		±80	Ð	Ð
Emitter± Base Breakdown Voltage		V(BR)EBO	±5.0	Ð	Ð	Vdc
(IE = ±10 mAdc, IC = 0)
Collector Cutoff Current		ICBO
(VCB = ±30 Vdc, IE = 0)			Ð	Ð	±100	nAdc
(VCB = ±30 Vdc, IE = 0, TA = 125°C)			Ð	Ð	±10	μAdc

1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle 2.0%.

Motorola Small±Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1996

BC636	BC638	BC640
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
		Characteristic		Symbol	Min	Typ	Max	Unit
ON CHARACTERISTICS(1)
DC Current Gain				hFE				Ð
(IC = ±5.0 mAdc, VCE = ±2.0 Vdc)					25	Ð	Ð
(IC = ±150 mAdc, VCE = ±2.0 Vdc)			BC636		40	Ð	250
			BC638		40	Ð	160
			BC640		40	Ð	160
(IC = ±500 mA, VCE = ±2.0 V)					25	Ð	Ð
Collector± Emitter Saturation Voltage				VCE(sat)	Ð	±0.25	±0.5	Vdc
(IC = ±500 mAdc, IB = ±50 mAdc)					Ð	±0.5	Ð
Base±Emitter On Voltage				VBE(on)	Ð	Ð	±1.0	Vdc
(IC = ±500 mAdc, VCE = ±2.0 Vdc)
DYNAMIC CHARACTERISTICS
Current± Gain Ð Bandwidth Product				fT	Ð	150	Ð	MHz
(IC = ±50 mAdc, VCE = ±2.0 Vdc, f = 100 MHz)
Output Capacitance				Cob	Ð	9.0	Ð	pF
(VCB = ±10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance				Cib	Ð	110	Ð	pF
(VEB = ±0.5 Vdc, IC = 0, f = 1.0 MHz)

1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle 2.0%.

2	Motorola Small±Signal Transistors, FETs and Diodes Device Data