2N6504 Series
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits.
•Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability
•Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation and Durability
•Blocking Voltage to 800 Volts
•300 A Surge Current Capability
•Device Marking: Logo, Device Type, e.g., 2N6504, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating |
Symbol |
Value |
Unit |
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*Peak Repetitive Off±State Voltage (Note 1.) |
VDRM, |
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Volts |
(Gate Open, Sine Wave 50 to 60 Hz, |
VRRM |
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TJ = 25 to 125°C) |
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2N6504 |
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50 |
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2N6505 |
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100 |
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2N6507 |
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400 |
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2N6508 |
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600 |
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2N6509 |
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800 |
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On-State RMS Current |
IT(RMS) |
25 |
A |
(180° Conduction Angles; TC = 85°C) |
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Average On-State Current |
IT(AV) |
16 |
A |
(180° Conduction Angles; TC = 85°C) |
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Peak Non-repetitive Surge Current |
ITSM |
250 |
A |
(1/2 Cycle, Sine Wave 60 Hz, TJ = 100°C) |
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Forward Peak Gate Power |
PGM |
20 |
Watts |
(Pulse Width ≤ 1.0 μs, TC = 85°C) |
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Forward Average Gate Power |
PG(AV) |
0.5 |
Watts |
(t = 8.3 ms, TC = 85°C) |
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Forward Peak Gate Current |
IGM |
2.0 |
A |
(Pulse Width ≤ 1.0 μs, TC = 85°C) |
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Operating Junction Temperature Range |
TJ |
±40 to |
°C |
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+125 |
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Storage Temperature Range |
Tstg |
±40 to |
°C |
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+150 |
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*Indicates JEDEC Registered Data |
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1.VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
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SCRs
25 AMPERES RMS
50 thru 800 VOLTS
G
A
K
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MARKING |
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DIAGRAM |
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4 |
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TO±220AB |
YY WW |
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CASE 221A |
650x |
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STYLE 3 |
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1 |
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2 |
x = 4, 5, 7, 8 or 9 |
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3YY = Year
WW = Work Week
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PIN ASSIGNMENT |
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1 |
Cathode |
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2 |
Anode |
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3 |
Gate |
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4 |
Anode |
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ORDERING INFORMATION
Device |
Package |
Shipping |
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2N6504 |
TO220AB |
500/Box |
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2N6505 |
TO220AB |
500/Box |
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2N6507 |
TO220AB |
500/Box |
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2N6508 |
TO220AB |
500/Box |
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2N6509 |
TO220AB |
500/Box |
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Preferred devices are recommended choices for future use and best overall value.
Semiconductor Components Industries, LLC, 2001 |
1 |
Publication Order Number: |
April, 2001 ± Rev. 4 |
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2N6504/D |
2N6504 Series
*THERMAL CHARACTERISTICS
Characteristic |
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Symbol |
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Max |
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Unit |
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Thermal Resistance, Junction to Case |
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RθJC |
1.5 |
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°C/W |
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Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds |
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TL |
260 |
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°C |
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) |
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Characteristic |
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Symbol |
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Min |
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Typ |
Max |
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Unit |
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OFF CHARACTERISTICS |
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*Peak Repetitive Forward or Reverse Blocking Current |
TJ = 25°C |
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IDRM, IRRM |
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mA |
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(VAK = Rated VDRM or VRRM, Gate Open) |
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± |
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± |
10 |
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TJ = 125°C |
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± |
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± |
2.0 |
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mA |
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ON CHARACTERISTICS |
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*Forward On±State Voltage (Note 2.) |
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VTM |
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± |
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± |
1.8 |
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Volts |
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(ITM = 50 A) |
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*Gate Trigger Current (Continuous dc) |
TC = 25°C |
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IGT |
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± |
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9.0 |
30 |
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mA |
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(VAK = 12 Vdc, RL = 100 Ohms) |
TC = ±40°C |
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± |
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± |
75 |
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*Gate Trigger Voltage (Continuous dc) |
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VGT |
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± |
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1.0 |
1.5 |
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Volts |
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(VAK = 12 Vdc, RL = 100 Ohms, TC = ±40°C) |
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Gate Non-Trigger Voltage |
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VGD |
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0.2 |
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± |
± |
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Volts |
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(VAK = 12 Vdc, RL = 100 Ohms, TJ = 125°C) |
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*Holding Current |
TC = 25°C |
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IH |
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± |
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18 |
40 |
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mA |
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(VAK = 12 Vdc, Initiating Current = 200 mA, |
TC = ±40°C |
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± |
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± |
80 |
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Gate Open) |
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*Turn-On Time |
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tgt |
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± |
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1.5 |
2.0 |
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ms |
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(ITM = 25 A, IGT = 50 mAdc) |
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Turn-Off Time (VDRM = rated voltage) |
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tq |
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ms |
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(ITM = 25 A, IR = 25 A) |
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± |
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15 |
± |
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(ITM = 25 A, IR = 25 A, TJ = 125°C) |
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± |
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35 |
± |
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DYNAMIC CHARACTERISTICS |
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Critical Rate of Rise of Off-State Voltage |
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dv/dt |
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± |
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50 |
± |
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V/ms |
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(Gate Open, Rated VDRM, Exponential Waveform) |
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*Indicates JEDEC Registered Data. |
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2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. |
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http://onsemi.com
2
2N6504 Series
Voltage Current Characteristic of SCR
Symbol |
Parameter |
|
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VDRM |
Peak Repetitive Off State Forward Voltage |
IDRM |
Peak Forward Blocking Current |
VRRM |
Peak Repetitive Off State Reverse Voltage |
IRRM |
Peak Reverse Blocking Current |
VTM |
Peak On State Voltage |
IH |
Holding Current |
+ Current
Anode +
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VTM |
on state |
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IRRM at VRRM |
IH |
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+ Voltage |
Reverse Blocking Region |
IDRM at VDRM |
(off state) |
Forward Blocking Region |
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Reverse Avalanche Region |
(off state) |
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Anode ± |
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(°C) |
13 |
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0 |
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CASE TEMPERATURE |
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12 |
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α |
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0 |
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α = CONDUCTION ANGLE |
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110 |
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10 |
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, MAXIMUM |
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0 |
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90 |
α = 30° |
60° |
90° |
180° |
dc |
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C |
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T |
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80 |
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0 |
4.0 |
8.0 |
12 |
16 |
20 |
IT(AV), ON STATE FORWARD CURRENT (AMPS)
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32 |
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(WATTS) |
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α |
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180° |
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24 |
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α = CONDUCTION ANGLE |
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90° |
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POWER |
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60° |
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dc |
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α = 30° |
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, AVERAGE |
16 |
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TJ = 125°C |
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(AV) |
8.0 |
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P |
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0 |
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0 |
4.0 |
8.0 |
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12 |
16 |
20 |
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IT(AV), AVERAGE ON STATE FORWARD CURRENT (AMPS) |
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Figure 1. Average Current Derating |
Figure 2. Maximum On±State Power Dissipation |
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3
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