ON Semiconductor 2N6075B, 2N6075A, 2N6073B, 2N6073A, 2N6071B Datasheet
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2N6071A/B Series
Preferred Device
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering.
•Sensitive Gate Triggering Uniquely Compatible for Direct Coupling to TTL, HTL, CMOS and Operational Amplifier Integrated Circuit Logic Functions
• Gate Triggering 4 Mode Ð 2N6071A,B, 2N6073A,B, 2N6075A,B
•Blocking Voltages to 600 Volts
•All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability
•Small, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability
•Device Marking: Device Type, e.g., 2N6071A, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating |
Symbol |
Value |
Unit |
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*Peak Repetitive Off-State Voltage(1) |
VDRM, |
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Volts |
(TJ = 40 to 110°C, Sine Wave, |
VRRM |
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50 to 60 Hz, Gate Open) |
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2N6071A,B |
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200 |
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2N6073A,B |
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400 |
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2N6075A,B |
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600 |
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*On-State RMS Current (TC = 85°C) |
IT(RMS) |
4.0 |
Amps |
Full Cycle Sine Wave 50 to 60 Hz |
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*Peak Non±repetitive Surge Current |
ITSM |
30 |
Amps |
(One Full cycle, 60 Hz, TJ = +110°C) |
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Circuit Fusing Considerations |
I2t |
3.7 |
A2s |
(t = 8.3 ms) |
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*Peak Gate Power |
PGM |
10 |
Watts |
(Pulse Width ≤ 1.0 μs, TC = 85°C) |
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*Average Gate Power |
PG(AV) |
0.5 |
Watt |
(t = 8.3 ms, TC = 85°C) |
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*Peak Gate Voltage |
VGM |
5.0 |
Volts |
(Pulse Width ≤ 1.0 μs, TC = 85°C) |
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*Operating Junction Temperature Range |
TJ |
±40 to |
°C |
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+110 |
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*Storage Temperature Range |
Tstg |
±40 to |
°C |
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+150 |
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Mounting Torque (6-32 Screw)(2) |
Ð |
8.0 |
in. lb. |
*Indicates JEDEC Registered Data.
(1)VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
(2)Torque rating applies with use of a compression washer. Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Main terminal 2 and heatsink contact pad are common.
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TRIACS
4 AMPERES RMS
200 thru 600 VOLTS
MT2 
MT1
G
3 2 |
1 |
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TO±225AA |
(formerly TO±126) |
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CASE 077 |
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STYLE 5 |
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PIN ASSIGNMENT |
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1 |
Main Terminal 1 |
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2 |
Main Terminal 2 |
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3 |
Gate |
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ORDERING INFORMATION
Device |
Package |
Shipping |
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2N6071A |
TO225AA |
500/Box |
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2N6071B |
TO225AA |
500/Box |
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2N6073A |
TO225AA |
500/Box |
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2N6073B |
TO225AA |
500/Box |
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2N6075A |
TO225AA |
500/Box |
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2N6075B |
TO225AA |
500/Box |
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Preferred devices are recommended choices for future use and best overall value.
Semiconductor Components Industries, LLC, 2000 |
1 |
Publication Order Number: |
May, 2000 ± Rev. 3 |
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2N6071/D |
2N6071A/B Series
THERMAL CHARACTERISTICS
Characteristic |
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Max |
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Unit |
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*Thermal Resistance, Junction to Case |
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RqJC |
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3.5 |
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°C/W |
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Thermal Resistance, Junction to Ambient |
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RqJA |
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75 |
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°C/W |
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Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds |
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TL |
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260 |
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°C |
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions) |
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Characteristic |
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Unit |
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OFF CHARACTERISTICS |
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*Peak Repetitive Blocking Current |
TJ = 25°C |
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IDRM, |
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mA |
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(VD = Rated VDRM, VRRM; Gate Open) |
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IRRM |
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Ð |
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Ð |
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10 |
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TJ = 110°C |
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Ð |
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Ð |
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2 |
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mA |
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ON CHARACTERISTICS |
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*Peak On-State Voltage(1) |
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VTM |
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Ð |
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Ð |
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2 |
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Volts |
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(ITM = "6 A Peak) |
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*Gate Trigger Voltage (Continuous dc) |
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VGT |
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Volts |
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(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms, TJ = ±40°C) |
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Ð |
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1.4 |
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2.5 |
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All Quadrants |
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Gate Non±Trigger Voltage |
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VGD |
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Volts |
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(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms, TJ = 110°C) |
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All Quadrants |
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0.2 |
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Ð |
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*Holding Current |
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IH |
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mA |
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(Main Terminal Voltage = 12 Vdc, Gate Open, |
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Initiating Current = "1 Adc) |
(TJ = ±40°C) |
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Ð |
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Ð |
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30 |
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(TJ = 25°C) |
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Ð |
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Ð |
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15 |
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Turn-On Time |
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tgt |
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Ð |
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1.5 |
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Ð |
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ms |
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(ITM = 14 Adc, IGT = 100 mAdc) |
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QUADRANT |
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(Maximum Value) |
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Type |
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IGT |
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I |
II |
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III |
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IV |
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@ TJ |
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mA |
mA |
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mA |
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mA |
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Gate Trigger Current (Continuous dc) |
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2N6071A |
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+25°C |
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5 |
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5 |
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5 |
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10 |
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(Main Terminal Voltage = 12 Vdc, RL = 100 ohms) |
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2N6073A |
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±40°C |
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20 |
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20 |
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20 |
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30 |
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2N6075A |
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2N6071B |
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+25°C |
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3 |
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3 |
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3 |
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5 |
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2N6073B |
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±40°C |
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15 |
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15 |
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15 |
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20 |
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2N6075B |
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DYNAMIC CHARACTERISTICS |
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Critical Rate of Rise of Commutation Voltage |
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dv/dt(c) |
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Ð |
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5 |
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V/ms |
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@ VDRM, TJ = 85°C, Gate Open, ITM = 5.7 A, Exponential Waveform, |
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Commutating di/dt = 2.0 A/ms |
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*Indicates JEDEC Registered Data. |
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(1) Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. |
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http://onsemi.com
2
2N6071A/B Series
SAMPLE APPLICATION:
TTL-SENSITIVE GATE 4 AMPERE TRIAC
TRIGGERS IN MODES II AND III
0 V |
14 |
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MC7400 |
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LOAD |
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4 |
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510 |
2N6071A |
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7 |
115 VAC |
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±VEE |
Ω |
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VEE = 5.0 V |
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60 Hz |
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+ |
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Trigger devices are recommended for gating on Triacs. They provide:
1.Consistent predictable turn-on points.
2.Simplified circuitry.
3.Fast turn-on time for cooler, more efficient and reliable operation.
Voltage Current Characteristic of Triacs
(Bidirectional Device)
Symbol |
Parameter |
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VDRM |
Peak Repetitive Forward Off State Voltage |
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IDRM |
Peak Forward Blocking Current |
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VRRM |
Peak Repetitive Reverse Off State Voltage |
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IRRM |
Peak Reverse Blocking Current |
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VTM |
Maximum On State Voltage |
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IH |
Holding Current |
+ Current
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Quadrant 1 |
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VTM |
MainTerminal 2 + |
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on state |
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IRRM at VRRM |
IH |
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off state |
+ Voltage |
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IH |
IDRM at VDRM |
Quadrant 3 |
VTM |
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MainTerminal 2 ± |
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