ON Semiconductor BC618ZL1, BC618RL1, BC618RL, BC618 Datasheet

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by BC618/D

Darlington Transistors

NPN Silicon

				COLLECTOR 1
			BASE
			2
					EMITTER 3
MAXIMUM RATINGS
Rating	Symbol	Value			Unit
Collector± Emitter Voltage	VCEO	55			Vdc
Collector± Base Voltage	VCBO	80			Vdc
Emitter± Base Voltage	VEBO	12			Vdc
Collector Current Ð Continuous	IC	1.0			Adc
Total Device Dissipation @ TA = 25°C	PD	625			mW
Derate above 25°C		5.0			mW/°C
Total Device Dissipation @ TC = 25°C	PD	1.5			Watts
Derate above 25°C		12			mW/°C
Operating and Storage Junction	TJ, Tstg	± 55 to +150					°C
Temperature Range
THERMAL CHARACTERISTICS
Characteristic	Symbol	Max			Unit
Thermal Resistance, Junction to	RqJA	200			°C/W
Ambient
Thermal Resistance, Junction to Case	RqJC	83.3			°C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

BC618

1

2 3

CASE 29±04, STYLE 17 TO±92 (TO±226AA)

Characteristic	Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Collector± Emitter Breakdown Voltage	V(BR)CEO	55	Ð	Ð	Vdc
(IC = 10 mAdc, VBE = 0)
Collector± Base Breakdown Voltage	V(BR)CBO	80	Ð	Ð	Vdc
(IC = 100 mAdc, IE = 0)
Emitter± Base Breakdown Voltage	V(BR)EBO	12	Ð	Ð	Vdc
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current	ICES	Ð	Ð	50	nAdc
(VCE = 60 Vdc, VBE = 0)
Collector Cutoff Current	ICBO	Ð	Ð	50	nAdc
(VCB = 60 Vdc, IE = 0)
Emitter Cutoff Current	IEBO	Ð	Ð	50	nAdc
(VEB = 10 Vdc, IC = 0)

Motorola Small±Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1996

BC618

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic	Symbol	Min	Typ	Max	Unit
ON CHARACTERISTICS
Collector± Emitter Saturation Voltage	VCE(sat)	Ð	Ð	1.1	Vdc
(IC = 200 mA, IB = 0.2 mA)
Base ± Emitter Saturation Voltage	VBE(sat)	Ð	Ð	1.6	Vdc
(IC = 200 mA, IB = 0.2 mA)
DC Current Gain	hFE				Ð
(IC = 100 μA, VCE = 5.0 Vdc)		2000	Ð	Ð
(IC = 10 mA, VCE = 5.0 Vdc)		4000	Ð	Ð
(IC = 200 mA, VCE = 5.0 Vdc)		10000	Ð	50000
(IC = 1.0 A, VCE = 5.0 Vdc)		4000	Ð	Ð
DYNAMIC CHARACTERISTICS
Current± Gain Ð Bandwidth Product	fT	150	Ð	Ð	MHz
(IC = 500 mA, VCE = 5.0 Vdc, P = 100 MHz)
Output Capacitance	Cob	Ð	4.5	7.0	pF
(VCB = 10 V, IE = 0, f = 1.0 MHz)
Input Capacitance	Cib	Ð	5.0	9.0	pF
(VEB = 5.0 V, IE = 0, f = 1.0 MHz)

RS

in

en

IDEAL

TRANSISTOR

Figure 1. Transistor Noise Model

2	Motorola Small±Signal Transistors, FETs and Diodes Device Data